STW88N65M5-4
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STMicroelectronics STW88N65M5-4

Manufacturer No:
STW88N65M5-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 84A TO247-4L
Delivery:
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Product Introduction

Overview

The STW88N65M5-4 is an N-channel Power MOSFET from STMicroelectronics, leveraging the innovative MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout. This device is designed to offer high performance and reliability in various power management applications. With its robust design and advanced technology, the STW88N65M5-4 is suitable for demanding environments requiring high voltage and current handling capabilities.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-State Resistance) 0.024 Ω
ID (Drain Current) 84 A
Ptot (Total Power Dissipation) - -
TJ (Junction Temperature) -150 to 175 °C
Package TO247-4 -

Key Features

  • High Voltage and Current Handling: The STW88N65M5-4 can handle up to 650 V drain-source voltage and 84 A drain current, making it suitable for high-power applications.
  • Low On-State Resistance: With a typical on-state resistance of 0.024 Ω, this MOSFET minimizes power losses and enhances efficiency.
  • MDmesh™ M5 Technology: Utilizes STMicroelectronics' proprietary MDmesh™ M5 vertical process technology for improved performance and reliability.
  • PowerMESH™ Layout: The PowerMESH™ horizontal layout contributes to better thermal management and reduced electrical noise.
  • Robust Package: The TO247-4 package ensures good thermal dissipation and mechanical robustness.

Applications

  • Power Supplies: Suitable for high-power DC-DC converters, switch-mode power supplies, and other power management systems.
  • Motor Control: Used in motor drive applications, including industrial and automotive systems.
  • Renewable Energy Systems: Applicable in solar and wind power systems for efficient power conversion.
  • Aerospace and Defense: Can be used in various military and aerospace applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STW88N65M5-4?

    The maximum drain-source voltage is 650 V.

  2. What is the typical on-state resistance of the STW88N65M5-4?

    The typical on-state resistance is 0.024 Ω.

  3. What is the maximum drain current of the STW88N65M5-4?

    The maximum drain current is 84 A.

  4. What package type is used for the STW88N65M5-4?

    The package type is TO247-4.

  5. What technology is used in the STW88N65M5-4?

    The device uses STMicroelectronics' MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout.

  6. What are some common applications for the STW88N65M5-4?

    Common applications include power supplies, motor control, renewable energy systems, and aerospace and defense systems.

  7. What is the junction temperature range for the STW88N65M5-4?

    The junction temperature range is -150 to 175 °C.

  8. How does the MDmesh™ M5 technology benefit the STW88N65M5-4?

    The MDmesh™ M5 technology enhances performance and reliability by improving the device's electrical characteristics and thermal management.

  9. Is the STW88N65M5-4 suitable for high-power applications?

    Yes, it is designed to handle high voltage and current, making it suitable for high-power applications.

  10. Where can I find detailed specifications for the STW88N65M5-4?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website or through distributors like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:84A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:29mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:204 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:8825 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):450W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4
Package / Case:TO-247-4
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Similar Products

Part Number STW88N65M5-4 STW38N65M5-4
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 84A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 42A, 10V 95mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 204 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 8825 pF @ 100 V 3000 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 450W (Tc) 190W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-4 TO-247-4
Package / Case TO-247-4 TO-247-4

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