Overview
The STW38N65M5-4 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications requiring high power and superior efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STW38N65M5-4 | |
| Package | TO247-4 | |
| VDS @ TJmax | 710 V | V |
| RDS(on) max | 0.095 Ω | Ω |
| ID (continuous) at TC = 25 °C | 30 A | A |
| ID (continuous) at TC = 100 °C | 19 A | A |
| ID (pulsed) | 120 A | A |
| PTOT at TC = 25 °C | 190 W | W |
| VGS | ±25 V | V |
| Tstg | -55 to 150 °C | °C |
| Tj | -55 to 150 °C | °C |
| Rthj-case | 0.66 °C/W | °C/W |
| Rthj-amb | 50 °C/W | °C/W |
Key Features
- Extremely low RDS(on) of 0.073 Ω typical, making it suitable for high power and high efficiency applications.
- Low gate charge and input capacitance for excellent switching performance.
- 100% avalanche tested for robustness and reliability.
- High dv/dt capability and MOSFET dv/dt ruggedness.
- Worldwide best RDS(on) * area, offering superior power density and efficiency.
Applications
- High efficiency switching applications such as servers, PV inverters, telecom infrastructure, and multi kW battery chargers.
- Other high-power applications requiring superior efficiency and power density.
Q & A
- What is the maximum drain-source breakdown voltage of the STW38N65M5-4?
The maximum drain-source breakdown voltage (VBR(DSS)) is 650 V.
- What is the typical on-resistance (RDS(on)) of the STW38N65M5-4?
The typical on-resistance (RDS(on)) is 0.073 Ω.
- What is the maximum continuous drain current at 25 °C and 100 °C?
The maximum continuous drain current is 30 A at 25 °C and 19 A at 100 °C).
- What is the maximum pulsed drain current?
The maximum pulsed drain current is 120 A).
- What are the storage and operating junction temperature ranges?
The storage temperature range is -55 to 150 °C, and the operating junction temperature range is also -55 to 150 °C).
- What are the key features of the STW38N65M5-4?
The key features include extremely low RDS(on), low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing).
- In what types of applications is the STW38N65M5-4 typically used?
The STW38N65M5-4 is typically used in high efficiency switching applications such as servers, PV inverters, telecom infrastructure, and multi kW battery chargers).
- What is the thermal resistance junction-case and junction-ambient of the STW38N65M5-4?
The thermal resistance junction-case (Rthj-case) is 0.66 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 50 °C/W).
- What is the gate threshold voltage of the STW38N65M5-4?
The gate threshold voltage (VGS(th)) is between 3 V and 5 V).
- What are the switching times for the STW38N65M5-4?
The switching times include a voltage delay time of approximately 60 ns, a voltage rise time of approximately 8 ns, a current fall time of approximately 8 ns, and a crossing time of approximately 11.5 ns).
