FDT1600N10ALZ
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onsemi FDT1600N10ALZ

Manufacturer No:
FDT1600N10ALZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 5.6A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDT1600N10ALZ is an N-Channel PowerTrench® MOSFET produced by onsemi. This component is designed for high-performance applications, offering a balance of low on-resistance and high switching speeds. Although it is currently obsolete and not in production, it remains a reference point for engineers and designers seeking similar specifications in modern components.

Key Specifications

Parameter Value
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 5.6 A
Rds On - Drain-Source Resistance 156 mΩ
Vgs - Gate-Source Threshold Voltage 1 to 3 V
Package Type SOT-223
Power Dissipation 10.42 W

Key Features

  • Low on-resistance (Rds On) of 156 mΩ, which reduces power losses and improves efficiency.
  • High continuous drain current (Id) of 5.6 A, suitable for high-power applications.
  • Drain-source breakdown voltage (Vds) of 100 V, providing robust protection against voltage spikes.
  • Compact SOT-223 package, ideal for space-constrained designs.
  • High switching speeds, making it suitable for applications requiring fast switching times.

Applications

The FDT1600N10ALZ is suitable for a variety of high-performance applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching regulators and power management systems.
  • Automotive and industrial control systems.

Q & A

  1. What is the drain-source breakdown voltage of the FDT1600N10ALZ?

    The drain-source breakdown voltage (Vds) is 100 V.

  2. What is the continuous drain current rating of the FDT1600N10ALZ?

    The continuous drain current (Id) is 5.6 A.

  3. What is the on-resistance (Rds On) of the FDT1600N10ALZ?

    The on-resistance (Rds On) is 156 mΩ.

  4. What package type is the FDT1600N10ALZ available in?

    The FDT1600N10ALZ is available in the SOT-223 package.

  5. Is the FDT1600N10ALZ still in production?

    No, the FDT1600N10ALZ is obsolete and not in production.

  6. What are some typical applications for the FDT1600N10ALZ?

    Typical applications include power supplies, motor control systems, switching regulators, and automotive/industrial control systems.

  7. What is the power dissipation rating of the FDT1600N10ALZ?

    The power dissipation rating is 10.42 W.

  8. What is the gate-source threshold voltage range for the FDT1600N10ALZ?

    The gate-source threshold voltage (Vgs) range is 1 to 3 V.

  9. Why is the FDT1600N10ALZ useful for high-performance applications?

    It is useful due to its low on-resistance, high continuous drain current, and high switching speeds.

  10. Where can I find detailed specifications for the FDT1600N10ALZ?

    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.77 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):10.42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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