Overview
The NTD3055L170-1G is a high-performance, N-Channel, logic-level power MOSFET produced by onsemi. This device is designed for low voltage, high-speed switching applications, making it suitable for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET is available in DPAK and IPAK packages, both of which are Pb-free and compliant with automotive and other stringent application requirements, including AEC-Q101 qualification and PPAP capability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Drain Current - Continuous @ TA = 25°C | ID | 9.0 | A |
| Drain Current - Continuous @ TA = 100°C | ID | 3.0 | A |
| Single Pulse Drain Current | IDM | 27 | A |
| Gate-to-Source Voltage - Continuous | VGS | ±15 Vdc | |
| Gate Threshold Voltage | VGS(th) | 1.0 - 1.7 Vdc | |
| Static Drain-to-Source On-Resistance | RDS(on) | 170 mΩ | |
| Total Power Dissipation @ TA = 25°C | PD | 28.5 W | |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 175 °C | |
| Thermal Resistance - Junction-to-Case | RθJC | 5.2 °C/W | |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 °C |
Key Features
- Logic-level gate drive for ease of use with microcontrollers and other logic-level signals.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.
- High-speed switching capabilities with low on-resistance (RDS(on) = 170 mΩ).
- High drain current (ID = 9.0 A) and single pulse drain current (IDM = 27 A).
- Wide operating and storage temperature range (-55 to 175 °C).
- Pb-free packages in DPAK and IPAK styles.
- Low gate threshold voltage (VGS(th) = 1.0 - 1.7 Vdc) for efficient switching.
Applications
- Power Supplies: Suitable for use in various power supply designs due to its high-speed switching and low on-resistance.
- Converters: Ideal for DC-DC converters and other power conversion applications.
- Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
- Bridge Circuits: Applicable in bridge configurations such as half-bridge and full-bridge circuits.
- Automotive Systems: AEC-Q101 qualified, making it suitable for automotive and other high-reliability applications.
Q & A
- What is the maximum drain-to-source voltage of the NTD3055L170-1G MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the continuous drain current rating at 25°C for this MOSFET?
The continuous drain current (ID) at 25°C is 9.0 A.
- What is the gate threshold voltage range for the NTD3055L170-1G?
The gate threshold voltage (VGS(th)) range is 1.0 to 1.7 Vdc.
- What are the typical applications of the NTD3055L170-1G MOSFET?
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
- Is the NTD3055L170-1G MOSFET AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 260 °C.
- What is the thermal resistance from junction to case for this MOSFET?
The thermal resistance from junction to case (RθJC) is 5.2 °C/W.
- What are the package options available for the NTD3055L170-1G?
The MOSFET is available in DPAK and IPAK packages, both of which are Pb-free.
- What is the static drain-to-source on-resistance of the NTD3055L170-1G?
The static drain-to-source on-resistance (RDS(on)) is 170 mΩ.
- What is the operating and storage temperature range for this MOSFET?
The operating and storage temperature range is -55 to 175 °C.
