Overview
The NVD3055L170T4G-VF01 is a high-performance N-Channel MOSFET manufactured by ON Semiconductor. This device is part of the miniMOS™ technology family and is designed for low voltage, high speed switching applications. It is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET features a DPAK package and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Drain Current - Continuous @ TA = 25°C | ID | 9.0 | A |
| Drain Current - Continuous @ TA = 100°C | ID | 3.0 | A |
| Single Pulse Drain Current | IDM | 27 | A |
| Gate-to-Source Voltage - Continuous | VGS | ±15 | Vdc |
| Gate Threshold Voltage | VGS(th) | 1.0 - 1.7 | Vdc |
| Static Drain-to-Source On-Resistance | RDS(on) | 170 | mΩ |
| Total Power Dissipation @ TA = 25°C | PD | 28.5 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 175 | °C |
| Thermal Resistance - Junction-to-Case | RθJC | 5.2 | °C/W |
Key Features
- High Current Capability: The NVD3055L170T4G-VF01 can handle up to 9A continuous current and a peak pulse current of up to 27A.
- Low On-State Resistance: With a maximum on-state resistance (RDS(on)) of 170 mΩ, this MOSFET minimizes power losses during operation.
- Fast Switching: The device features fast switching characteristics, including a turn-on delay time of 9.7 ns and a turn-off delay time of 10 ns.
- Integrated Diode: It includes an integrated fast body and source diode with a recovery time of approximately 33 ns.
- Thermal Performance: The MOSFET has a thermal resistance of 5.2 °C/W (junction-to-case) and is designed for efficient heat dissipation.
- AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements, and PPAP capable).
Applications
- Power Supplies: Ideal for use in power supply units due to its high current handling and low on-state resistance).
- Converters: Suitable for DC/DC converters as the main switch, pre-load switch, or load switch).
- Power Motor Controls: Used in motor control circuits for efficient and reliable operation).
- Bridge Circuits: Applicable in bridge configurations for various power electronic applications).
- Automotive Systems: AEC-Q101 qualified, making it suitable for automotive and other demanding applications).
Q & A
- What is the maximum drain-to-source voltage of the NVD3055L170T4G-VF01 MOSFET?
The maximum drain-to-source voltage is 60 Vdc).
- What is the continuous drain current rating at 25°C?
The continuous drain current rating at 25°C is 9.0 A).
- What is the maximum on-state resistance (RDS(on)) of this MOSFET?
The maximum on-state resistance is 170 mΩ).
- What are the typical applications of the NVD3055L170T4G-VF01 MOSFET?
Typical applications include power supplies, converters, power motor controls, and bridge circuits).
- Is the NVD3055L170T4G-VF01 AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable).
- What is the thermal resistance (junction-to-case) of this MOSFET?
The thermal resistance (junction-to-case) is 5.2 °C/W).
- What is the recovery time of the integrated diode?
The recovery time of the integrated diode is approximately 33 ns).
- What is the operating and storage temperature range of the NVD3055L170T4G-VF01?
The operating and storage temperature range is -55 to 175 °C).
- What package type does the NVD3055L170T4G-VF01 come in?
The MOSFET comes in a DPAK package).
- Is the NVD3055L170T4G-VF01 RoHS compliant?
Yes, it is RoHS3 compliant).
