Overview
The NTD3055L170G is a high-performance, N-Channel, logic-level MOSFET designed and manufactured by onsemi. This device is optimized for low voltage, high-speed switching applications, making it suitable for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET features a drain-to-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 9.0 A at 25°C. It is available in both DPAK and IPAK packages, which are Pb-free and compliant with automotive standards (AEC-Q101 qualified and PPAP capable for the NVD prefix variants).
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Gate-to-Source Voltage (Continuous) | VGS | ±15 | Vdc |
| Continuous Drain Current at 25°C | ID | 9.0 | A |
| Continuous Drain Current at 100°C | ID | 3.0 | A |
| Single Pulse Drain Current | IDM | 27 | A |
| Total Power Dissipation at 25°C | PD | 28.5 | W |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to 175 | °C |
| Static Drain-to-Source On-Resistance | RDS(on) | 170 | mΩ |
| Thermal Resistance (Junction-to-Case) | RθJC | 5.2 | °C/W |
| Thermal Resistance (Junction-to-Ambient) | RθJA | 71.4 | °C/W |
Key Features
- High-Speed Switching: Designed for high-speed switching applications in power supplies, converters, and power motor controls.
- Logic-Level Gate Drive: Compatible with logic-level gate drive, making it easy to control with standard logic ICs.
- AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free Packages: Available in Pb-free DPAK and IPAK packages.
- Low On-Resistance: Features a low static drain-to-source on-resistance (RDS(on)) of 170 mΩ.
- High Avalanche Energy Capability: Capable of withstanding high avalanche energy, making it robust for demanding applications.
Applications
- Power Supplies: Ideal for use in DC-DC converters and other power supply applications.
- Converters: Suitable for use in various types of converters, including buck, boost, and buck-boost converters.
- Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
- Bridge Circuits: Applicable in bridge configurations such as half-bridge and full-bridge circuits.
- Automotive Systems: AEC-Q101 qualified, making it suitable for automotive and other high-reliability applications.
Q & A
- What is the maximum drain-to-source voltage of the NTD3055L170G MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the continuous drain current at 25°C for this MOSFET?
The continuous drain current (ID) at 25°C is 9.0 A.
- What is the static drain-to-source on-resistance of the NTD3055L170G?
The static drain-to-source on-resistance (RDS(on)) is 170 mΩ.
- Is the NTD3055L170G suitable for automotive applications?
- What are the typical applications of the NTD3055L170G MOSFET?
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
- What is the operating temperature range of the NTD3055L170G?
The operating and storage temperature range is −55 to 175 °C.
- What is the thermal resistance from junction to case for this MOSFET?
The thermal resistance from junction to case (RθJC) is 5.2 °C/W.
- Can the NTD3055L170G handle high avalanche energy?
- What are the package options available for the NTD3055L170G?
The MOSFET is available in Pb-free DPAK and IPAK packages.
- How does the gate drive affect the switching performance of the NTD3055L170G?
The MOSFET is designed for logic-level gate drive, which simplifies control using standard logic ICs. The switching performance is also influenced by the gate charge and parasitic circuit elements.
