Overview
The NTD3055L170 is a single N-Channel Logic Level Power MOSFET designed by onsemi. This component is optimized for low voltage, high speed switching applications. It is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits. Although the NTD3055L170 is currently listed as obsolete, its specifications and features remain relevant for understanding its capabilities and potential applications.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | ±15 | Vdc |
| Drain Current - Continuous @ TA = 25°C | ID | 9.0 | A |
| Drain Current - Continuous @ TA = 100°C | ID | 3.0 | A |
| Single Pulse Drain Current | IDM | 27 | A |
| Total Power Dissipation @ TA = 25°C | PD | 28.5 | W |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to 175 | °C |
| Static Drain-to-Source On-Resistance @ VGS = 10 V | RDS(on) | 170 | mΩ |
| Gate Threshold Voltage | VGS(th) | 1.0 - 4.2 | Vdc |
| Input Capacitance | Ciss | 195 | pF |
| Output Capacitance | Coss | 70 | pF |
| Transfer Capacitance | Crss | 29 | pF |
Key Features
- Logic Level Gate Drive: The MOSFET is designed to operate with logic level gate drive, making it compatible with a wide range of control signals.
- Low On-Resistance: With a static drain-to-source on-resistance (RDS(on)) of 170 mΩ at VGS = 10 V, it offers efficient switching performance.
- High Speed Switching: Optimized for high speed switching applications, making it suitable for power supplies, converters, and motor controls.
- AEC-Q101 Qualified: The NVD prefix version is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-Free Packages: Available in Pb-free DPAK and IPAK packages, ensuring compliance with environmental regulations.
Applications
- Power Supplies: Ideal for use in power supply units due to its high efficiency and low on-resistance.
- Converters: Suitable for DC-DC converters and other power conversion applications.
- Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
- Bridge Circuits: Applicable in bridge configurations for various power management systems.
Q & A
- What is the maximum drain-to-source voltage of the NTD3055L170?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 9.0 A.
- What is the typical on-resistance of the NTD3055L170?
The typical static drain-to-source on-resistance (RDS(on)) is 170 mΩ at VGS = 10 V.
- What are the operating and storage temperature ranges for this MOSFET?
The operating and storage temperature range is from −55°C to 175°C.
- Is the NTD3055L170 AEC-Q101 qualified?
The NVD prefix version of this MOSFET is AEC-Q101 qualified and PPAP capable, but not the standard NTD3055L170.
- What are the typical applications for the NTD3055L170?
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
- What is the maximum gate-to-source voltage?
The maximum continuous gate-to-source voltage (VGS) is ±15 Vdc.
- What is the input capacitance of the NTD3055L170?
The input capacitance (Ciss) is typically 195 pF.
- Is the NTD3055L170 Pb-free?
Yes, the NTD3055L170 is available in Pb-free packages.
- What is the single pulse drain-to-source avalanche energy rating?
The single pulse drain-to-source avalanche energy (EAS) is 30 mJ.
