SMMUN2216LT1G
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onsemi SMMUN2216LT1G

Manufacturer No:
SMMUN2216LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMUN2216LT1G is a digital transistor produced by onsemi, part of their series of Bias Resistor Transistors (BRT). This device integrates a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The SMMUN2216LT1G is packaged in a SOT-23 (TO-236) lead-free package, making it suitable for various applications requiring compact and efficient solutions.

Key Specifications

Characteristic Symbol Max Unit
Total Device Dissipation (TA = 25°C) PD 246 mW
Derate above 25°C - 2.0 mW/°C
Thermal Resistance, Junction to Ambient RθJA 508 °C/W
Thermal Resistance, Junction to Lead RθJL 174 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
DC Current Gain (hFE) - 160 to 350
Collector-Emitter Saturation Voltage (VCE(sat)) - 0.25 Vdc
Input Voltage (off) Vi(off) 0.6 Vdc
Input Voltage (on) Vi(on) 1.3 Vdc
Output Voltage (on) VOL 0.2 Vdc
Output Voltage (off) VOH 4.9 Vdc
Input Resistor (R1) - 3.3 to 4.7 kΩ

Key Features

  • Simplifies circuit design by integrating the transistor and bias resistors into a single device.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free package, compliant with environmental regulations.
  • Available in SOT-23 (TO-236) package, which is compact and suitable for surface mount applications.

Applications

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for various automotive applications.
  • Consumer electronics: Ideal for compact and efficient designs in consumer electronics.
  • Industrial control systems: Can be used in industrial control circuits where space and component count are critical.
  • General-purpose switching: Suitable for general-purpose switching applications where a compact, integrated solution is required.

Q & A

  1. What is the SMMUN2216LT1G?

    The SMMUN2216LT1G is a digital transistor with a monolithic bias resistor network, produced by onsemi.

  2. What are the key benefits of using the SMMUN2216LT1G?

    It simplifies circuit design, reduces board space, and decreases the overall component count.

  3. What package type is the SMMUN2216LT1G available in?

    The SMMUN2216LT1G is available in a SOT-23 (TO-236) lead-free package.

  4. What is the maximum total device dissipation at 25°C?

    The maximum total device dissipation at 25°C is 246 mW.

  5. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient is 508 °C/W.

  6. What is the DC current gain range of the SMMUN2216LT1G?

    The DC current gain (hFE) range is from 160 to 350.

  7. Is the SMMUN2216LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other similar applications.

  8. What is the collector-emitter saturation voltage (VCE(sat)) of the SMMUN2216LT1G?

    The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.

  9. What are the input voltage ranges for the SMMUN2216LT1G?

    The input voltage (off) is 0.6 Vdc, and the input voltage (on) is 1.3 Vdc.

  10. What is the output voltage range when the device is on?

    The output voltage (on) is 0.2 Vdc.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number SMMUN2216LT1G SMMUN2216LT3G SMMUN2116LT1G SMMUN2211LT1G SMMUN2213LT1G SMMUN2214LT1G SMMUN2215LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms 4.7 kOhms 10 kOhms 47 kOhms 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) - - - 10 kOhms 47 kOhms 47 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - -
Power - Max 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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