NSVMMUN2132LT1G
  • Share:

onsemi NSVMMUN2132LT1G

Manufacturer No:
NSVMMUN2132LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSVMMUN2132LT1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistors, thereby reducing both system cost and board space. It is part of the MUN2132 series and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Max Unit
Total Device Dissipation (TA = 25°C) PD 230 mW
Derate above 25°C - 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 540 °C/W
Thermal Resistance, Junction to Lead RθJL 264 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Input Voltage (off) Vi(off) 1.2 Vdc
Input Voltage (on) Vi(on) 3.0 Vdc
Output Voltage (on) VOL 0.2 Vdc
Output Voltage (off) VOH 4.9 Vdc
Input Resistor R1 4.7 kΩ
Resistor Ratio R1/R2 1.0 -
Package - SOT-23 -
Shipping - 3000 / Tape & Reel -

Key Features

  • Simplifies circuit design by integrating a single transistor with a monolithic bias resistor network.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.

Applications

The NSVMMUN2132LT1G is designed for use in various applications, including:

  • Automotive systems requiring high reliability and compliance with AEC-Q101 standards.
  • Industrial control systems where space and component count are critical.
  • Consumer electronics that benefit from simplified circuit designs and reduced board space.
  • Any application requiring a compact, integrated transistor with built-in bias resistors.

Q & A

  1. What is the NSVMMUN2132LT1G?

    The NSVMMUN2132LT1G is a digital transistor with a monolithic bias resistor network produced by onsemi.

  2. What are the key benefits of using the NSVMMUN2132LT1G?

    It simplifies circuit design, reduces board space, and decreases component count.

  3. What is the package type of the NSVMMUN2132LT1G?

    The device is packaged in a SOT-23 package.

  4. Is the NSVMMUN2132LT1G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable.

  5. What is the maximum total device dissipation at 25°C?

    The maximum total device dissipation at 25°C is 230 mW.

  6. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient is 540 °C/W.

  7. What is the input voltage range for the device to be in the 'on' state?

    The input voltage for the 'on' state is typically 3.0 Vdc.

  8. Is the NSVMMUN2132LT1G Pb-free and RoHS compliant?

    Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  9. What are the typical applications for the NSVMMUN2132LT1G?

    It is used in automotive systems, industrial control systems, consumer electronics, and any application requiring a compact integrated transistor.

  10. How is the device shipped?

    The device is shipped in tape and reel format, with 3000 units per reel.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.05
17,203

Please send RFQ , we will respond immediately.

Same Series
NSVDTA143EM3T5G
NSVDTA143EM3T5G
NSVDTA143 - PNP BIPOLAR DIGITAL
MMUN2132LT1G
MMUN2132LT1G
TRANS PREBIAS PNP 50V SOT23-3
MUN5132T1G
MUN5132T1G
TRANS PREBIAS PNP 50V SC70-3
NSVMUN5132T1G
NSVMUN5132T1G
TRANS PREBIAS PNP 50V SC70-3
DTA143EET1G
DTA143EET1G
TRANS PREBIAS PNP 50V 100MA SC75
DTA143EM3T5G
DTA143EM3T5G
TRANS PREBIAS PNP 50V SOT723
NSBA143EF3T5G
NSBA143EF3T5G
TRANS PREBIAS PNP 50V SOT1123

Similar Products

Part Number NSVMMUN2132LT1G NSVMMUN2133LT1G NSVMMUN2232LT1G NSVMMUN2135LT1G NSVMMUN2136LT1G NSVMMUN2112LT1G NSVMMUN2131LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms 4.7 kOhms 2.2 kOhms 100 kOhms 22 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms 47 kOhms 4.7 kOhms 47 kOhms 100 kOhms 22 kOhms 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V 80 @ 5mA, 10V 15 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 60 @ 5mA, 10V 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - -
Power - Max 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

PDTC114ET,215
PDTC114ET,215
Nexperia USA Inc.
TRANS PREBIAS NPN 250MW TO236AB
PDTD123YT,215
PDTD123YT,215
Nexperia USA Inc.
TRANS PREBIAS NPN 250MW TO236AB
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
NSVMMUN2232LT1G
NSVMMUN2232LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
SMUN5233T1G
SMUN5233T1G
onsemi
TRANS PREBIAS NPN 50V SC70-3
PDTC143ET,235
PDTC143ET,235
NXP Semiconductors
PDTC143E - NPN RESISTOR-EQUIPPED
MMUN2214LT1G
MMUN2214LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
PDTA114YU,115
PDTA114YU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 50V SOT323
MUN5237T1G
MUN5237T1G
onsemi
TRANS PREBIAS NPN 50V SC70-3
DTA123JET1G
DTA123JET1G
onsemi
TRANS PREBIAS PNP 50V 100MA SC75
PDTC124EU/ZLF
PDTC124EU/ZLF
Nexperia USA Inc.
PDTC124EU/ZLF
PDTD123YT/APGVL
PDTD123YT/APGVL
Nexperia USA Inc.
PDTD123YT/APGVL

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220