NSVMMUN2132LT1G
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onsemi NSVMMUN2132LT1G

Manufacturer No:
NSVMMUN2132LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSVMMUN2132LT1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistors, thereby reducing both system cost and board space. It is part of the MUN2132 series and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Max Unit
Total Device Dissipation (TA = 25°C) PD 230 mW
Derate above 25°C - 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 540 °C/W
Thermal Resistance, Junction to Lead RθJL 264 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Input Voltage (off) Vi(off) 1.2 Vdc
Input Voltage (on) Vi(on) 3.0 Vdc
Output Voltage (on) VOL 0.2 Vdc
Output Voltage (off) VOH 4.9 Vdc
Input Resistor R1 4.7 kΩ
Resistor Ratio R1/R2 1.0 -
Package - SOT-23 -
Shipping - 3000 / Tape & Reel -

Key Features

  • Simplifies circuit design by integrating a single transistor with a monolithic bias resistor network.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.

Applications

The NSVMMUN2132LT1G is designed for use in various applications, including:

  • Automotive systems requiring high reliability and compliance with AEC-Q101 standards.
  • Industrial control systems where space and component count are critical.
  • Consumer electronics that benefit from simplified circuit designs and reduced board space.
  • Any application requiring a compact, integrated transistor with built-in bias resistors.

Q & A

  1. What is the NSVMMUN2132LT1G?

    The NSVMMUN2132LT1G is a digital transistor with a monolithic bias resistor network produced by onsemi.

  2. What are the key benefits of using the NSVMMUN2132LT1G?

    It simplifies circuit design, reduces board space, and decreases component count.

  3. What is the package type of the NSVMMUN2132LT1G?

    The device is packaged in a SOT-23 package.

  4. Is the NSVMMUN2132LT1G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable.

  5. What is the maximum total device dissipation at 25°C?

    The maximum total device dissipation at 25°C is 230 mW.

  6. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient is 540 °C/W.

  7. What is the input voltage range for the device to be in the 'on' state?

    The input voltage for the 'on' state is typically 3.0 Vdc.

  8. Is the NSVMMUN2132LT1G Pb-free and RoHS compliant?

    Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  9. What are the typical applications for the NSVMMUN2132LT1G?

    It is used in automotive systems, industrial control systems, consumer electronics, and any application requiring a compact integrated transistor.

  10. How is the device shipped?

    The device is shipped in tape and reel format, with 3000 units per reel.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number NSVMMUN2132LT1G NSVMMUN2133LT1G NSVMMUN2232LT1G NSVMMUN2135LT1G NSVMMUN2136LT1G NSVMMUN2112LT1G NSVMMUN2131LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms 4.7 kOhms 2.2 kOhms 100 kOhms 22 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms 47 kOhms 4.7 kOhms 47 kOhms 100 kOhms 22 kOhms 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V 80 @ 5mA, 10V 15 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 60 @ 5mA, 10V 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - -
Power - Max 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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