Overview
The NSVMMUN2232LT1G is a digital transistor produced by onsemi, part of their series of Bias Resistor Transistors (BRT). This device integrates a single NPN transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and minimizes component count. The NSVMMUN2232LT1G is packaged in a SOT-23 (TO-236) case and is Pb-free, making it suitable for various electronic applications requiring compact and efficient solutions.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 1.5 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 15 | 30 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Input Voltage (off) | Vi(off) | - | 1.2 | 0.5 | Vdc |
| Input Voltage (on) | Vi(on) | 2.5 | 2.0 | - | Vdc |
| Input Resistor R1 | - | 3.3 | 4.7 | 6.1 | kΩ |
| Resistor Ratio R1/R2 | - | 0.8 | 1.0 | 1.2 | - |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external resistors.
- Reduces Board Space: Compact SOT-23 packaging minimizes the footprint on the PCB.
- Reduces Component Count: Combines multiple components into a single device, simplifying inventory and assembly.
- Pb-Free Package: Compliant with environmental regulations, making it suitable for a wide range of applications.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive and other stringent application requirements.
Applications
- Automotive Electronics: Suitable for use in automotive systems due to its AEC-Q101 qualification and PPAP capability.
- Consumer Electronics: Ideal for use in compact electronic devices such as smartphones, tablets, and other portable electronics.
- Industrial Control Systems: Can be used in various industrial control applications where space and component count are critical.
- Medical Devices: Applicable in medical devices that require reliable and compact electronic components.
Q & A
- What is the NSVMMUN2232LT1G?
The NSVMMUN2232LT1G is a digital transistor with a monolithic bias resistor network, produced by onsemi.
- What are the key benefits of using the NSVMMUN2232LT1G?
It simplifies circuit design, reduces board space, and minimizes component count.
- What is the package type of the NSVMMUN2232LT1G?
The device is packaged in a SOT-23 (TO-236) case.
- Is the NSVMMUN2232LT1G Pb-free?
Yes, the NSVMMUN2232LT1G is Pb-free, making it compliant with environmental regulations.
- What are the typical applications of the NSVMMUN2232LT1G?
It is suitable for automotive electronics, consumer electronics, industrial control systems, and medical devices.
- What is the DC current gain of the NSVMMUN2232LT1G?
The DC current gain (hFE) is typically 30, with a minimum of 15.
- What is the collector-emitter saturation voltage of the NSVMMUN2232LT1G?
The collector-emitter saturation voltage (VCE(sat)) is typically 0.25 Vdc.
- What is the junction and storage temperature range of the NSVMMUN2232LT1G?
The junction and storage temperature range is -55°C to 150°C.
- Is the NSVMMUN2232LT1G AEC-Q101 qualified?
Yes, the NSVMMUN2232LT1G is AEC-Q101 qualified and PPAP capable.
- Why is the NSVMMUN2232LT1G not recommended for new designs?
The device has been discontinued, and onsemi recommends contacting their representative for information on current alternatives.
