Overview
The NSVMMUN2235LT1G is a digital transistor from onsemi, part of the MUN2235 series. This device is designed to integrate a single transistor with a monolithic bias resistor network, simplifying circuit design and reducing the need for external components. It is particularly useful in applications where space and component count are critical factors. The NSVMMUN2235LT1G is available in a Pb-free SOT-23 package and is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nA |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nA |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mA |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | V |
| DC Current Gain | hFE | 80 | 140 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Input Voltage (off) | Vi(off) | - | 0.6 | 0.5 | V |
| Input Voltage (on) | Vi(on) | 1.1 | 0.8 | - | V |
| Input Resistor R1 | R1 | 1.5 | 2.2 | 2.9 | kΩ |
| Resistor Ratio R1/R2 | R1/R2 | 0.038 | 0.047 | 0.056 | - |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
- Reduces Board Space: Compact SOT-23 package minimizes board footprint.
- Reduces Component Count: Combines multiple components into a single device, simplifying inventory and assembly.
- AEC-Q101 Qualified: Suitable for automotive and other applications requiring high reliability and robustness.
- Pb-Free Package: Compliant with environmental regulations and suitable for lead-free manufacturing processes.
Applications
The NSVMMUN2235LT1G is versatile and can be used in a variety of applications, including:
- Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as sensors, actuators, and control modules.
- Industrial Control Systems: Can be used in industrial automation, motor control, and other industrial applications where reliability and compactness are essential.
- Consumer Electronics: Applicable in consumer devices that require compact and reliable switching solutions.
- Medical Devices: Suitable for medical equipment where space is limited and reliability is critical.
Q & A
- What is the NSVMMUN2235LT1G used for?
The NSVMMUN2235LT1G is a digital transistor used to replace a single device and its external resistor bias network, simplifying circuit design and reducing board space. - What package type does the NSVMMUN2235LT1G come in?
The NSVMMUN2235LT1G comes in a Pb-free SOT-23 package. - Is the NSVMMUN2235LT1G AEC-Q101 qualified?
Yes, the NSVMMUN2235LT1G is AEC-Q101 qualified, making it suitable for automotive and other demanding applications. - What is the typical DC current gain (hFE) of the NSVMMUN2235LT1G?
The typical DC current gain (hFE) is 140. - What is the collector-emitter saturation voltage (VCE(sat)) of the NSVMMUN2235LT1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 V. - What is the input voltage range for the NSVMMUN2235LT1G when it is on?
The input voltage range when the device is on is typically 0.8 V to 1.1 V. - What is the junction and storage temperature range for the NSVMMUN2235LT1G?
The junction and storage temperature range is -55°C to 150°C. - Is the NSVMMUN2235LT1G lead-free?
Yes, the NSVMMUN2235LT1G is available in a Pb-free package. - What are some common applications for the NSVMMUN2235LT1G?
Common applications include automotive systems, industrial control systems, consumer electronics, and medical devices. - How does the NSVMMUN2235LT1G reduce component count?
The NSVMMUN2235LT1G integrates a single transistor with a monolithic bias resistor network, eliminating the need for separate resistors.
