SMUN5235T1G-M02
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onsemi SMUN5235T1G-M02

Manufacturer No:
SMUN5235T1G-M02
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
NPN BIPOLAR DIGITAL TRANSISTOR (
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMUN5235T1G-M02 is an NPN bipolar digital transistor produced by onsemi. This component is part of the discrete semiconductor products category and is designed for use in a wide range of electronic devices. It is a pre-biased transistor, which means it has built-in resistors that simplify circuit design and reduce the number of external components needed. The transistor is packaged in a SC-70 (SOT-323) case, making it suitable for surface mount applications. It is also lead-free and RoHS compliant, ensuring environmental safety and regulatory compliance.

Key Specifications

Parameter Value
Part Number SMUN5235T1G-M02
Manufacturer onsemi
Transistor Type NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
Current - Collector (Ic) (Max) 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 202 mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323

Key Features

  • Pre-Biased Transistor: The SMUN5235T1G-M02 comes with built-in base and emitter resistors, simplifying circuit design and reducing the need for external components.
  • Surface Mount Package: The SC-70 (SOT-323) package is ideal for surface mount applications, enhancing board space efficiency and ease of assembly.
  • RoHS Compliant: This transistor is lead-free and RoHS compliant, ensuring it meets environmental safety and regulatory standards.[
  • High Reliability: With a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, this transistor offers reliable performance in various applications.[
  • Low Saturation Voltage: The transistor has a Vce saturation of 250mV at 1mA and 10mA, which is beneficial for low-power consumption and efficient operation.[

Applications

The SMUN5235T1G-M02 is versatile and can be used in a wide range of electronic devices, including:

  • Computers and peripherals
  • Smartphones and other mobile devices
  • Televisions and other consumer electronics
  • Automotive systems
  • Medical devices
  • Industrial control systems

This transistor provides the necessary computational power and functionality to enable these devices to perform their intended tasks efficiently.

Q & A

  1. What is the part number of this transistor?

    The part number of this transistor is SMUN5235T1G-M02.[

  2. Who is the manufacturer of the SMUN5235T1G-M02?

    The manufacturer is onsemi.[

  3. What type of transistor is the SMUN5235T1G-M02?

    The SMUN5235T1G-M02 is an NPN pre-biased bipolar transistor.[

  4. What is the maximum collector-emitter breakdown voltage of the SMUN5235T1G-M02?

    The maximum collector-emitter breakdown voltage is 50 V.[

  5. What is the package type of the SMUN5235T1G-M02?

    The package type is SC-70 (SOT-323).[

  6. Is the SMUN5235T1G-M02 RoHS compliant?

    Yes, the SMUN5235T1G-M02 is lead-free and RoHS compliant.[

  7. What is the maximum collector current of the SMUN5235T1G-M02?

    The maximum collector current is 100 mA.[

  8. What are the values of the built-in resistors in the SMUN5235T1G-M02?

    The base resistor (R1) is 2.2 kOhms, and the emitter base resistor (R2) is 47 kOhms.[

  9. What is the DC current gain (hFE) of the SMUN5235T1G-M02?

    The DC current gain (hFE) is 80 at 5mA and 10V.[

  10. What is the typical application of the SMUN5235T1G-M02?

    The SMUN5235T1G-M02 is used in various electronic devices such as computers, smartphones, televisions, and automotive systems.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:202 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70 (SOT323)
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