DTC143EET1G
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onsemi DTC143EET1G

Manufacturer No:
DTC143EET1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V 100MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The DTC143EET1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This component simplifies circuit design by eliminating the need for external resistors, thereby reducing both system cost and board space. Although this device is currently discontinued and not recommended for new designs, it remains relevant for existing projects and maintenance.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Cutoff Current ICBO - - 100 nAdc
Collector-Emitter Cutoff Current ICEO - - 500 nAdc
Emitter-Base Cutoff Current IEBO - - 1.5 mAdc
Collector-Base Breakdown Voltage V(BR)CBO 50 - - Vdc
Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - Vdc
DC Current Gain hFE 15 30 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 Vdc
Input Voltage (off) Vi(off) - 1.2 0.5 Vdc
Input Voltage (on) Vi(on) 2.5 2.0 - Vdc
Input Resistor R1 - 3.3 4.7 6.1
Resistor Ratio R1/R2 - 0.8 1.0 1.2 -
Total Device Dissipation at 25°C PD - - 200 mW
Thermal Resistance, Junction to Ambient RθJA - - 600 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
  • Reduces Board Space: Compact package options such as SC-75, SC-70/SOT-323, and SOT-723 minimize board real estate.
  • Reduces Component Count: By integrating resistors into the transistor, it decreases the overall component count in the circuit.
  • Pb-Free Packages: Available in lead-free packages, making it compliant with environmental regulations.
  • Wide Temperature Range: Operates over a junction and storage temperature range of -55°C to 150°C.

Applications

  • General Purpose Switching: Suitable for various switching applications where a compact, integrated solution is required.
  • Automotive Systems: Can be used in automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Consumer Electronics: Ideal for use in consumer electronics where space and component count are critical factors.
  • Industrial Control Systems: Used in industrial control systems for reliable and compact transistor solutions.

Q & A

  1. What is the DTC143EET1G?

    The DTC143EET1G is a digital transistor with a monolithic bias resistor network produced by onsemi.

  2. Why is the DTC143EET1G discontinued?

    The DTC143EET1G is discontinued and not recommended for new designs. However, it may still be used in existing projects or for maintenance purposes.

  3. What are the key benefits of using the DTC143EET1G?

    It simplifies circuit design, reduces board space, and decreases component count by integrating resistors into the transistor.

  4. What are the typical package options for the DTC143EET1G?

    The DTC143EET1G is available in SC-75, SC-70/SOT-323, and SOT-723 packages.

  5. What is the thermal resistance of the DTC143EET1G in the SC-75 package?

    The thermal resistance (RθJA) for the SC-75 package is approximately 600°C/W.

  6. What is the maximum collector-emitter breakdown voltage of the DTC143EET1G?

    The maximum collector-emitter breakdown voltage (V(BR)CEO) is 50 Vdc.

  7. What is the typical DC current gain of the DTC143EET1G?

    The typical DC current gain (hFE) is 30.

  8. What is the collector-emitter saturation voltage of the DTC143EET1G?

    The collector-emitter saturation voltage (VCE(sat)) is typically 0.25 Vdc.

  9. Is the DTC143EET1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  10. What is the junction and storage temperature range of the DTC143EET1G?

    The junction and storage temperature range is -55°C to 150°C.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
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Similar Products

Part Number DTC143EET1G DTC144EET1G DTC143ZET1G DTC143TET1G DTC143EET1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 47 kOhms 4.7 kOhms 4.7 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms 47 kOhms 47 kOhms - 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - -
Power - Max 200 mW 200 mW 200 mW 200 mW 200 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416

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