Overview
The MUN5215T1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistors, thereby reducing system cost and board space. It is part of the Bias Resistor Transistor (BRT) series, which includes devices like the MUN2215, MMUN2215L, and DTC114TE. The MUN5215T1G is available in a Pb-free SC-70/SOT-323 package, making it suitable for various applications requiring compact and efficient solutions.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit | |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.9 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 160 | 350 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Input Voltage (off) | Vi(off) | - | 0.6 | 0.5 | Vdc |
| Input Voltage (on) | Vi(on) | 1.7 | 1.2 | - | Vdc |
| Input Resistor R1 | R1 | 7.0 | 10 | 13 | kΩ |
| Total Device Dissipation at TA = 25°C | PD | 202 | - | 310 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 508 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
- Reduces Board Space: Compact SC-70/SOT-323 package minimizes board real estate.
- Reduces Component Count: Combines multiple components into a single device, simplifying inventory and assembly.
- Pb-Free Package: Compliant with lead-free requirements, making it suitable for environmentally friendly designs.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
Applications
The MUN5215T1G is versatile and can be used in a variety of applications, including:
- Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- Consumer Electronics: Ideal for use in compact electronic devices where space is limited.
- Industrial Control Systems: Can be used in control circuits and switching applications.
- Medical Devices: Suitable for medical equipment requiring reliable and compact transistor solutions.
Q & A
- What is the MUN5215T1G? The MUN5215T1G is a digital transistor with a monolithic bias resistor network produced by onsemi.
- What package type does the MUN5215T1G come in? It comes in a Pb-free SC-70/SOT-323 package.
- What are the key benefits of using the MUN5215T1G? It simplifies circuit design, reduces board space, and reduces component count.
- What is the maximum collector-emitter breakdown voltage of the MUN5215T1G? The maximum collector-emitter breakdown voltage is 50 Vdc.
- What is the typical DC current gain of the MUN5215T1G? The typical DC current gain is 350.
- What is the thermal resistance, junction to ambient, for the MUN5215T1G? The thermal resistance, junction to ambient, is 508 °C/W.
- Is the MUN5215T1G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the junction and storage temperature range for the MUN5215T1G? The junction and storage temperature range is -55°C to +150°C.
- Can the MUN5215T1G be used in automotive applications? Yes, it is suitable for automotive and other applications requiring unique site and control change requirements.
- Is the MUN5215T1G lead-free? Yes, it is available in a Pb-free package.
