PDTC114ET,235
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Nexperia USA Inc. PDTC114ET,235

Manufacturer No:
PDTC114ET,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 250MW TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTC114ET,235 is a 50 V, 100 mA NPN resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. This component is designed to simplify circuit design and reduce component count, making it an efficient choice for various electronic applications. It features built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ) and is packaged in a small SOT23 Surface-Mounted Device (SMD) plastic package, making it suitable for space-constrained designs.

Key Specifications

Parameter Value Unit
Type NPN Resistor-Equipped Transistor (RET)
Collector-Base Voltage (VCBO) 50 V
Collector-Emitter Voltage (VCEO) 50 V
Emitter-Base Voltage (VEBO) 10 V
Input Voltage (VI) -10 V
Output Current (IO) 100 mA
Total Power Dissipation (Ptot) 250 mW
Junction Temperature (Tj) 150 °C
Ambient Temperature (Tamb) -65 to 150 °C
Storage Temperature (Tstg) -65 to 150 °C
Resistor - Emitter Base (R2) 10 kΩ
Resistor - Base (R1) 10 kΩ
Package SOT23 (TO-236AB)
Mounting Type Surface Mount

Key Features

  • 100 mA Output Current Capability: Supports a maximum output current of 100 mA.
  • Built-in Bias Resistors: Features built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ) to simplify circuit design.
  • Component Count Reduction: Reduces the number of external components required, streamlining the design process.
  • Pick and Place Cost Reduction: Minimizes pick and place costs due to the integrated resistors.
  • Compact Package: Packaged in a small SOT23 SMD plastic package, ideal for space-constrained applications.
  • Automotive and Industrial Applications: Suitable for digital applications in automotive and industrial segments.
  • Cost-Effective Alternative: A cost-saving alternative for BC847 series in digital applications.

Applications

  • Digital Applications: Ideal for controlling IC inputs and switching loads in digital circuits.
  • Automotive Segment: Used in various automotive electronic systems due to its robustness and reliability.
  • Industrial Segment: Suitable for industrial control systems, sensors, and other industrial electronics.
  • Consumer Electronics: Can be used in consumer electronic devices where space and component count are critical.

Q & A

  1. What is the maximum collector-emitter voltage of the PDTC114ET,235?

    The maximum collector-emitter voltage (VCEO) is 50 V.

  2. What is the output current capability of the PDTC114ET,235?

    The output current capability is 100 mA.

  3. What are the values of the built-in bias resistors?

    The built-in bias resistors are R1 = 10 kΩ and R2 = 10 kΩ.

  4. What is the package type of the PDTC114ET,235?

    The package type is SOT23 (TO-236AB).

  5. Is the PDTC114ET,235 RoHS compliant?

    Yes, it is compliant with EU RoHS and CN RoHS directives.

  6. What is the maximum junction temperature of the PDTC114ET,235?

    The maximum junction temperature (Tj) is 150 °C.

  7. What are the typical applications of the PDTC114ET,235?

    Typical applications include digital applications in automotive and industrial segments, controlling IC inputs, and switching loads.

  8. How does the PDTC114ET,235 simplify circuit design?

    It simplifies circuit design by integrating bias resistors, reducing the need for external components.

  9. Is the PDTC114ET,235 a cost-effective alternative to other transistors?

    Yes, it is a cost-saving alternative for BC847 series in digital applications.

  10. What is the total power dissipation of the PDTC114ET,235?

    The total power dissipation (Ptot) is 250 mW.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:230 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTC114ET,235 PDTC114TT,235 PDTC124ET,235 PDTC114ET,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 22 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms - 22 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 200 @ 1mA, 5V 60 @ 5mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA
Frequency - Transition 230 MHz - - 230 MHz
Power - Max 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB

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