PDTC144ET,215
  • Share:

Nexperia USA Inc. PDTC144ET,215

Manufacturer No:
PDTC144ET,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTC144ET,215 is a 50 V, 100 mA NPN resistor-equipped transistor manufactured by Nexperia USA Inc. This transistor is designed to simplify circuit design by integrating built-in bias resistors, thereby reducing the component count and the complexity of the circuit. It is packaged in a SOT23 format, making it suitable for a wide range of applications where space is a constraint.

Key Specifications

Parameter Conditions Min Typ Max Unit
VCBO (Collector-Base Voltage) Open Emitter - - 50 V
VCEO (Collector-Emitter Voltage) Open Base - - 50 V
VEBO (Emitter-Base Voltage) Open Collector - - 10 V
VI (Input Voltage) - -10 - 40 V
IO (Output Current) - - - 100 mA
Ptot (Total Power Dissipation) Tamb ≤ 25 °C - - 250 mW
Tj (Junction Temperature) - - - 150 °C
Tamb (Ambient Temperature) - -65 - 150 °C
Tstg (Storage Temperature) - -65 - 150 °C

Key Features

  • 100 mA Output Current Capability: The transistor can handle up to 100 mA of output current, making it suitable for various applications requiring moderate current levels.
  • Built-in Bias Resistors: With built-in bias resistors (R1 = 47 kΩ, R2 = 47 kΩ), the PDTC144ET simplifies circuit design and reduces the overall component count.
  • Compact SOT23 Package: The transistor is packaged in a SOT23 format, which is ideal for space-constrained designs.
  • High Voltage Handling: The transistor can handle collector-base and collector-emitter voltages up to 50 V, making it robust for various applications.

Applications

  • General Purpose Switching: Suitable for general-purpose switching applications where moderate current and voltage handling are required.
  • Automotive Systems: Can be used in automotive systems due to its robust voltage and current handling capabilities.
  • Industrial Control Systems: Applicable in industrial control systems where reliability and simplicity in design are crucial.
  • Consumer Electronics: Used in various consumer electronics where compact design and moderate current handling are necessary.

Q & A

  1. What is the maximum output current of the PDTC144ET transistor?

    The maximum output current of the PDTC144ET transistor is 100 mA.

  2. What type of package does the PDTC144ET transistor use?

    The PDTC144ET transistor is packaged in a SOT23 format.

  3. What are the built-in bias resistor values in the PDTC144ET transistor?

    The built-in bias resistors are R1 = 47 kΩ and R2 = 47 kΩ.

  4. What is the maximum collector-base voltage the PDTC144ET can handle?

    The maximum collector-base voltage is 50 V.

  5. What is the maximum junction temperature for the PDTC144ET transistor?

    The maximum junction temperature is 150 °C.

  6. What is the total power dissipation limit for the PDTC144ET transistor at 25 °C ambient temperature?

    The total power dissipation limit at 25 °C ambient temperature is 250 mW.

  7. Can the PDTC144ET transistor be used in automotive applications?

    Yes, the PDTC144ET transistor can be used in automotive systems due to its robust voltage and current handling capabilities.

  8. How does the PDTC144ET simplify circuit design?

    The PDTC144ET simplifies circuit design by integrating built-in bias resistors, reducing the overall component count and complexity.

  9. What is the storage temperature range for the PDTC144ET transistor?

    The storage temperature range is from -65 °C to 150 °C.

  10. Where can I find detailed specifications for the PDTC144ET transistor?

    Detailed specifications can be found in the full data sheet available from Nexperia's sales office or through authorized distributors like Mouser Electronics.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
0 Remaining View Similar

In Stock

$0.17
3,900

Please send RFQ , we will respond immediately.

Same Series
PDTC144EM,315
PDTC144EM,315
NEXPERIA PDTC144 - SMALL SIGNAL
PDTC144ET,215
PDTC144ET,215
TRANS PREBIAS NPN 50V TO236AB
PDTC144EU,115
PDTC144EU,115
TRANS PREBIAS NPN 50V SOT323
PDTC144EU,135
PDTC144EU,135
TRANS PREBIAS NPN 200MW SOT323
PDTC144EE,115
PDTC144EE,115
TRANS PREBIAS NPN 150MW SC75
PDTC144EE,135
PDTC144EE,135
TRANS PREBIAS NPN 150MW SC75
PDTC144ET/DG/B2,21
PDTC144ET/DG/B2,21
TRANS RET TO-236AB

Similar Products

Part Number PDTC144ET,215 PDTC144WT,215 PDTC144TT,215 PDTC144VT,215 PDTC124ET,215 PDTC143ET,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 47 kOhms 47 kOhms 47 kOhms 47 kOhms 22 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms 22 kOhms - 10 kOhms 22 kOhms 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V 60 @ 5mA, 5V 100 @ 1mA, 5V 40 @ 5mA, 5V 60 @ 5mA, 5V 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - - -
Power - Max 250 mW 250 mW 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB

Related Product By Categories

MMUN2132LT1G
MMUN2132LT1G
onsemi
TRANS PREBIAS PNP 50V SOT23-3
PDTC114TT,235
PDTC114TT,235
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
SMUN2216T1G
SMUN2216T1G
onsemi
TRANS PREBIAS NPN 50V 100MA SC59
PDTC144EU,115
PDTC144EU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
MMUN2116LT1G
MMUN2116LT1G
onsemi
TRANS PREBIAS PNP 50V SOT23-3
MMUN2232LT1G
MMUN2232LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
MMUN2212LT1G
MMUN2212LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
NSVMMUN2235LT1G
NSVMMUN2235LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
PDTC123EEF,115
PDTC123EEF,115
NXP USA Inc.
TRANS PREBIAS NPN 250MW SC89
PDTC124EU/ZLF
PDTC124EU/ZLF
Nexperia USA Inc.
PDTC124EU/ZLF
PDTC144EU/ZLX
PDTC144EU/ZLX
Nexperia USA Inc.
PDTC144EU/ZLX
SMUN5235T1G-M02
SMUN5235T1G-M02
onsemi
NPN BIPOLAR DIGITAL TRANSISTOR (

Related Product By Brand

PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
BZX84J-B8V2,115
BZX84J-B8V2,115
Nexperia USA Inc.
DIODE ZENER 8.2V 550MW SOD323F
BZX84-C68,235
BZX84-C68,235
Nexperia USA Inc.
DIODE ZENER 68V 250MW TO236AB
BC856BS,115
BC856BS,115
Nexperia USA Inc.
TRANS 2PNP 65V 0.1A 6TSSOP
BC857CQAZ
BC857CQAZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1010D-3
74HCT4066D/C4118
74HCT4066D/C4118
Nexperia USA Inc.
74HCT4066D - SPST, 4 FUNC
IP4791CZ12,132
IP4791CZ12,132
Nexperia USA Inc.
IC INTERFACE SPECIALIZED 12HXSON
74HC244D,652
74HC244D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HC244D-Q100,118
74HC244D-Q100,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HC11DB,118-NEX
74HC11DB,118-NEX
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SSOP
CBTD16210DGG,112
CBTD16210DGG,112
Nexperia USA Inc.
IC BUS SWITCH 10 X 1:1 48TSSOP
74LVC138ADB,118
74LVC138ADB,118
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16SSOP