MMUN2214LT1G
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onsemi MMUN2214LT1G

Manufacturer No:
MMUN2214LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMUN2214LT1G is an NPN silicon bias resistor transistor produced by onsemi. This component is designed to simplify circuit design by integrating the transistor and its external resistor bias network into a single device. It is packaged in a compact SOT23 form factor, making it suitable for a variety of applications where space is limited.

Key Specifications

ParameterValue
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power Dissipation (Pd)246 mW
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Base Resistor (R1)10 kΩ
Package TypeSOT23

Key Features

  • Integrated bias resistor network, eliminating the need for external resistors.
  • Compact SOT23 package for space-saving designs.
  • High collector-emitter breakdown voltage of 50 V.
  • Low power dissipation of 246 mW.
  • Wide operating temperature range from -55°C to +150°C.

Applications

The MMUN2214LT1G is versatile and can be used in a variety of electronic circuits, including:

  • General-purpose switching and amplification.
  • Automotive and industrial control systems.
  • Consumer electronics where compact design is crucial.
  • Low-power audio and signal processing circuits.

Q & A

  1. What is the maximum collector current of the MMUN2214LT1G? The maximum collector current is 100 mA.
  2. What is the collector-emitter breakdown voltage of the MMUN2214LT1G? The collector-emitter breakdown voltage is 50 V.
  3. What is the power dissipation of the MMUN2214LT1G? The power dissipation is 246 mW.
  4. What is the operating temperature range of the MMUN2214LT1G? The operating temperature range is from -55°C to +150°C.
  5. What package type is the MMUN2214LT1G available in? The MMUN2214LT1G is available in a SOT23 package.
  6. What is the value of the integrated base resistor (R1) in the MMUN2214LT1G? The integrated base resistor (R1) is 10 kΩ.
  7. Is the MMUN2214LT1G suitable for high-temperature applications? Yes, it is suitable for high-temperature applications up to +150°C.
  8. Can the MMUN2214LT1G be used in automotive applications? Yes, it can be used in automotive and industrial control systems.
  9. What are some common applications of the MMUN2214LT1G? Common applications include general-purpose switching, amplification, and low-power audio circuits.
  10. Where can I find detailed specifications for the MMUN2214LT1G? Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Mouser, Digi-Key, and TME.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Part Number MMUN2214LT1G MMUN2217LT1G MMUN2234LT1G MMUN2215LT1G MMUN2216LT1G MMUN2114LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 4.7 kOhms 22 kOhms 10 kOhms 4.7 kOhms 10 kOhms 10 kOhms 22 kOhms 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms 10 kOhms 47 kOhms - - 47 kOhms 10 kOhms 22 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - -
Power - Max 246 mW 246 mW 246 mW 400 mW 400 mW 246 mW 246 mW 246 mW 246 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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