MUN5114T1G
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onsemi MUN5114T1G

Manufacturer No:
MUN5114T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN5114T1G is a PNP Bipolar Digital Transistor (BRT) produced by onsemi. This device is designed to replace a single transistor and its external resistor bias network, integrating a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and lowers system cost. The MUN5114T1G is AECQ101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also PbFree, Halogen Free/BFR Free, and RoHS compliant.

Key Specifications

Parameter Value
Polarity PNP
Continuous Collector Current (Ic) 100 mA
Peak DC Collector Current 100 mA
Power Dissipation (Pd) 202 mW
Minimum Operating Temperature -55°C
Base-Emitter Resistor (R1) 10 kΩ
Base-Emitter Resistor (R2) 47 kΩ
Typical R1/R2 Ratio 0.213
Collector-Emitter Voltage (Vceo) Min 50 V
Turn-On Voltage (Vin(on)) Min 1.4 V
Turn-Off Voltage (Vin(off)) Max 0.5 V
Package Type SC-70-3 / SOT-323-3

Key Features

  • Simplifies circuit design by integrating the bias network into a single device.
  • Reduces board space and component count.
  • AECQ101 qualified and PPAP capable for automotive and other stringent applications.
  • PbFree, Halogen Free/BFR Free, and RoHS compliant.

Applications

The MUN5114T1G is suitable for a variety of applications, including automotive systems, industrial control systems, and general-purpose digital circuits where space and component count are critical. Its AECQ101 qualification and PPAP capability make it particularly useful in automotive and other applications requiring high reliability and specific control change requirements.

Q & A

  1. What is the polarity of the MUN5114T1G?

    The MUN5114T1G is a PNP bipolar digital transistor.

  2. What is the continuous collector current of the MUN5114T1G?

    The continuous collector current is 100 mA.

  3. What is the power dissipation of the MUN5114T1G?

    The power dissipation is 202 mW.

  4. What are the values of the integrated resistors R1 and R2?

    R1 is 10 kΩ and R2 is 47 kΩ.

  5. Is the MUN5114T1G RoHS compliant?

    Yes, the MUN5114T1G is PbFree, Halogen Free/BFR Free, and RoHS compliant.

  6. What is the minimum operating temperature of the MUN5114T1G?

    The minimum operating temperature is -55°C.

  7. What package type is the MUN5114T1G available in?

    The MUN5114T1G is available in the SC-70-3 / SOT-323-3 package type.

  8. Is the MUN5114T1G suitable for automotive applications?

    Yes, it is AECQ101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.

  9. How does the MUN5114T1G simplify circuit design?

    The MUN5114T1G simplifies circuit design by integrating the bias network into a single device, reducing the need for external resistors.

  10. What are some typical applications of the MUN5114T1G?

    Typical applications include automotive systems, industrial control systems, and general-purpose digital circuits.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:202 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Similar Products

Part Number MUN5114T1G MUN5214T1G MUN5116T1G MUN5134T1G MUN5115T1G MUN2114T1G MUN5111T1G MUN5112T1G MUN5113T1G MUN5114T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Obsolete Obsolete
Transistor Type PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V -
Resistor - Base (R1) 10 kOhms 10 kOhms 4.7 kOhms 22 kOhms 10 kOhms 10 kOhms 10 kOhms 22 kOhms 47 kOhms -
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms - 47 kOhms - 47 kOhms 10 kOhms 22 kOhms 47 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V 80 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA -
Frequency - Transition - - - - - - - - - -
Power - Max 202 mW 202 mW 202 mW 202 mW 202 mW 230 mW 202 mW 202 mW 202 mW -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 -
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-59 SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) -

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