PDTC123EEF,115
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NXP USA Inc. PDTC123EEF,115

Manufacturer No:
PDTC123EEF,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 250MW SC89
Delivery:
Payment:
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Product Introduction

Overview

The PDTC123EEF,115 is a pre-biased NPN bipolar transistor (BJT) manufactured by NXP USA Inc. This component is designed to simplify circuit design and reduce the overall component count in electronic systems. It is packaged in a surface mount SC-89 format, making it suitable for a variety of modern electronic applications.

Key Specifications

ParameterValue
Voltage (VCE)50 V
Current (IC)100 mA
Power Dissipation (PTOT)250 mW
Package TypeSurface Mount SC-89
Built-in Bias ResistorsR1 = 2.2 kΩ

Key Features

  • Simplified circuit design due to built-in bias resistors.
  • Reduction of component count, which reduces pick and place costs.
  • Compact surface mount SC-89 package.
  • Pre-biased configuration for ease of use in various applications.

Applications

The PDTC123EEF,115 is suitable for a wide range of general-purpose applications, including but not limited to:

  • General-purpose switching and amplification.
  • Automotive and industrial control systems.
  • Consumer electronics.
  • Any application requiring a pre-biased NPN transistor.

Q & A

  1. What is the voltage rating of the PDTC123EEF,115? The voltage rating (VCE) is 50 V.
  2. What is the current rating of the PDTC123EEF,115? The current rating (IC) is 100 mA.
  3. What is the power dissipation of the PDTC123EEF,115? The power dissipation (PTOT) is 250 mW.
  4. What package type does the PDTC123EEF,115 use? It uses a surface mount SC-89 package.
  5. Does the PDTC123EEF,115 have built-in bias resistors? Yes, it has built-in bias resistors with R1 = 2.2 kΩ.
  6. What are the benefits of using the PDTC123EEF,115? It simplifies circuit design, reduces component count, and lowers pick and place costs.
  7. Is the PDTC123EEF,115 still in production? The PDTC123EE,115 (a similar model) is listed as obsolete, but the status of the PDTC123EEF,115 should be verified with the manufacturer or distributor.
  8. Where can I purchase the PDTC123EEF,115? It can be purchased from various electronic component distributors such as Digi-Key, Mouser, and others.
  9. What are some common applications for the PDTC123EEF,115? It is used in general-purpose switching and amplification, automotive and industrial control systems, and consumer electronics.
  10. How does the PDTC123EEF,115 simplify circuit design? It simplifies circuit design by integrating bias resistors, reducing the need for external components.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:SC-89, SOT-490
Supplier Device Package:SC-89
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Similar Products

Part Number PDTC123EEF,115 PDTC143EEF,115 PDTC123EE,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 4.7 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms 4.7 kOhms 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V 30 @ 10mA, 5V 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA
Frequency - Transition - - -
Power - Max 250 mW 250 mW 150 mW
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-89, SOT-490 SC-89, SOT-490 SC-75, SOT-416
Supplier Device Package SC-89 SC-89 SC-75

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