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PDTC123ET,215
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Nexperia USA Inc. PDTC123ET,215

Manufacturer No:
PDTC123ET,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The PDTC123ET,215 is a 50 V, 100 mA NPN resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. This component is designed in a small SOT23 (SC-101) surface-mounted device (SMD) plastic package. It is AEC-Q101 qualified, making it suitable for automotive and other demanding applications. The built-in bias resistors simplify circuit design, reduce component count, and lower pick and place costs, enhancing overall efficiency and reliability.

Key Specifications

ParameterValue
Type NumberPDTC123ET
PackageSOT23 (SC-101)
Channel TypeNPN
VCEO (V)50
IC [max] (mA)100
Ptot (mW)250
R1 (typ) (kΩ)2.2
R2 (typ) (kΩ)2.2
Tj [max] (°C)150
Automotive QualifiedYes

Key Features

  • Built-in bias resistors (R1 = 2.2 kΩ, R2 = 2.2 kΩ) simplify circuit design and reduce component count.
  • Reduces pick and place costs due to the integrated resistors.
  • AEC-Q101 qualified, ensuring reliability in automotive and other demanding applications.
  • Compact SOT23 package, ideal for space-constrained designs.
  • General purpose switching and amplification capabilities.
  • Suitable for inverter and interface circuits, as well as circuit drivers.

Applications

The PDTC123ET,215 is versatile and can be used in various applications, including:

  • General purpose switching and amplification.
  • Inverter and interface circuits.
  • Circuit drivers.
  • Automotive systems due to its AEC-Q101 qualification.
  • Industrial and consumer electronics where reliability and efficiency are crucial.

Q & A

  1. What is the PDTC123ET,215? The PDTC123ET,215 is a 50 V, 100 mA NPN resistor-equipped transistor (RET) in a SOT23 package.
  2. What are the built-in resistors values? The built-in resistors are R1 = 2.2 kΩ and R2 = 2.2 kΩ.
  3. Is the PDTC123ET,215 AEC-Q101 qualified? Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
  4. What are the key benefits of the built-in bias resistors? The built-in bias resistors simplify circuit design, reduce component count, and lower pick and place costs.
  5. What is the maximum collector current (IC)? The maximum collector current is 100 mA.
  6. What is the maximum junction temperature (Tj)? The maximum junction temperature is 150°C.
  7. What package type is used for the PDTC123ET,215? It is packaged in a SOT23 (SC-101) surface-mounted device (SMD).
  8. What are some common applications for the PDTC123ET,215? It is used in general purpose switching, amplification, inverter and interface circuits, and circuit drivers.
  9. Is the PDTC123ET,215 suitable for industrial applications? Yes, it is suitable for industrial and consumer electronics where reliability and efficiency are important.
  10. Where can I purchase the PDTC123ET,215? It can be purchased from various distributors such as Digi-Key, Mouser, and Future Electronics.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTC123ET,215 PDTC123JT,215 PDTC124ET,215 PDTC143ET,215 PDTC123TT,215 PDTC123YT,215 PDTB123ET,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 2.2 kOhms 22 kOhms 4.7 kOhms 2.2 kOhms 2.2 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms 47 kOhms 22 kOhms 4.7 kOhms - 10 kOhms 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V 100 @ 10mA, 5V 60 @ 5mA, 5V 30 @ 10mA, 5V 30 @ 20mA, 5V 35 @ 5mA, 5V 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA 1µA 100nA (ICBO)
Frequency - Transition - - - - - - -
Power - Max 250 mW 250 mW 250 mW 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB SOT-23 TO-236AB TO-236AB

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