Overview
The PDTD123YT/APGVL is a pre-biased NPN bipolar transistor (BJT) manufactured by Nexperia USA Inc. This component is designed for surface mount applications and is packaged in the SOT23-3 case. It is part of the PDTD123Y series and is known for its reliability and performance in various electronic circuits.
Key Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Series | PDTD123Y | Product Status | Obsolete |
| Transistor Type | NPN - Pre-Biased | Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms | DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA | Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 250 mW | Mounting Type | Surface Mount |
| Package/Case | SOT23-3 | Base Product Number | PDTD123 |
Key Features
- Pre-biased Configuration: The transistor comes with built-in base and emitter resistors, simplifying circuit design and reducing component count.
- High Collector-Emitter Voltage: With a maximum collector-emitter voltage of 50 V, this transistor is suitable for a wide range of applications requiring moderate voltage handling.
- Compact Package: The SOT23-3 package makes it ideal for space-constrained designs.
- Low Power Consumption: The maximum power dissipation of 250 mW ensures efficient operation in low-power applications.
Applications
The PDTD123YT/APGVL is versatile and can be used in various electronic circuits, including:
- General Purpose Amplification: Suitable for small signal amplification in audio, video, and other general-purpose applications.
- Switching Circuits: Can be used in switching applications where a pre-biased transistor is beneficial.
- Automotive Electronics: Given its robust specifications, it can be used in automotive systems that require reliable and efficient transistor performance.
- Consumer Electronics: Applicable in consumer electronics such as home appliances, audio equipment, and other devices requiring reliable transistor operation.
Q & A
- Q: What is the collector-emitter voltage breakdown of the PDTD123YT/APGVL?
A: The collector-emitter voltage breakdown is 50 V. - Q: What is the maximum collector current of the PDTD123YT/APGVL?
A: The maximum collector current is 500 mA. - Q: What is the package type of the PDTD123YT/APGVL?
A: The package type is SOT23-3. - Q: What is the power dissipation of the PDTD123YT/APGVL?
A: The maximum power dissipation is 250 mW. - Q: Is the PDTD123YT/APGVL suitable for surface mount applications?
A: Yes, it is designed for surface mount applications. - Q: What are the built-in resistors in the PDTD123YT/APGVL?
A: The transistor has built-in base and emitter resistors, with R1 = 2.2 kOhms and R2 = 10 kOhms. - Q: What is the DC current gain (hFE) of the PDTD123YT/APGVL?
A: The DC current gain (hFE) is 70 @ 50mA, 5V. - Q: Is the PDTD123YT/APGVL still in production?
A: The product status is obsolete, meaning it is no longer in production. - Q: How can I ensure the authenticity of the PDTD123YT/APGVL from Nexperia USA Inc.?
A: Ensure you purchase from authorized distributors who verify the credentials of original manufacturers and suppliers. - Q: What is the typical application of the PDTD123YT/APGVL?
A: It is typically used in general-purpose amplification, switching circuits, automotive electronics, and consumer electronics.
