SMUN5233T1G
  • Share:

onsemi SMUN5233T1G

Manufacturer No:
SMUN5233T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMUN5233T1G is a digital transistor from onsemi, part of the MUN5233 series. This device is designed to integrate a single transistor with a monolithic bias resistor network, simplifying circuit design and reducing the need for external components. The SMUN5233T1G is packaged in a SC-70/SOT-323 case, making it suitable for applications where space is limited.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Cutoff Current ICBO - - 100 nA
Collector-Emitter Cutoff Current ICEO - - 500 nA
Emitter-Base Cutoff Current IEBO - - 0.18 mA
Collector-Base Breakdown Voltage V(BR)CBO 50 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - V
DC Current Gain hFE 80 200 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 V
Total Device Dissipation at TA = 25°C PD 202 - 310 mW
Thermal Resistance, Junction to Ambient RθJA 618 - 403 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
  • Reduces Board Space: Compact SC-70/SOT-323 package makes it ideal for space-constrained applications.
  • Reduces Component Count: Combines multiple components into a single device, simplifying the overall design and reducing costs.
  • High Reliability: AEC-Q101 qualified and PPAP capable, ensuring high reliability for automotive and other demanding applications.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and high reliability.
  • Consumer Electronics: Ideal for use in consumer electronics where space and component count are critical.
  • Industrial Control Systems: Can be used in industrial control systems where simplicity and reliability are essential.
  • General Purpose Switching: Applicable in general-purpose switching applications requiring a compact and reliable transistor solution.

Q & A

  1. What is the SMUN5233T1G?

    The SMUN5233T1G is a digital transistor from onsemi, part of the MUN5233 series, designed to integrate a single transistor with a monolithic bias resistor network.

  2. What package type does the SMUN5233T1G use?

    The SMUN5233T1G is packaged in a SC-70/SOT-323 case.

  3. What are the key benefits of using the SMUN5233T1G?

    It simplifies circuit design, reduces board space, and reduces component count.

  4. What is the maximum collector-emitter breakdown voltage of the SMUN5233T1G?

    The maximum collector-emitter breakdown voltage is 50 V.

  5. What is the typical DC current gain of the SMUN5233T1G?

    The typical DC current gain (hFE) is 200.

  6. What is the thermal resistance, junction to ambient, for the SMUN5233T1G?

    The thermal resistance, junction to ambient, is 618 °C/W.

  7. What is the junction and storage temperature range for the SMUN5233T1G?

    The junction and storage temperature range is -55°C to 150°C.

  8. Is the SMUN5233T1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

  9. What are some common applications of the SMUN5233T1G?

    It is commonly used in automotive systems, consumer electronics, industrial control systems, and general-purpose switching applications.

  10. How does the SMUN5233T1G reduce component count?

    It integrates a single transistor with a monolithic bias resistor network, eliminating the need for external resistors.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:202 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
0 Remaining View Similar

In Stock

$0.34
2,412

Please send RFQ , we will respond immediately.

Same Series
NSVMMUN2233LT3G
NSVMMUN2233LT3G
NSVMMUN2233 - NPN BIPOLAR DIGITA
NSVDTC143ZM3T5G
NSVDTC143ZM3T5G
NSVDTC143ZM3 - NPN BIPOLAR DIGIT
MUN5233T1G
MUN5233T1G
TRANS PREBIAS NPN 50V SC70-3
SMMUN2233LT1G
SMMUN2233LT1G
TRANS PREBIAS NPN 0.246W SOT23
SMUN5233T1G
SMUN5233T1G
TRANS PREBIAS NPN 50V SC70-3
MMUN2233LT1G
MMUN2233LT1G
TRANS PREBIAS NPN 50V SOT23-3
DTC143ZET1G
DTC143ZET1G
TRANS PREBIAS NPN 50V 100MA SC75
DTC143ZM3T5G
DTC143ZM3T5G
TRANS PREBIAS NPN 50V SOT723
NSVDTC143ZET1G
NSVDTC143ZET1G
TRANS PREBIAS NPN 50V 100MA SC75
NSBC143ZF3T5G
NSBC143ZF3T5G
TRANS PREBIAS NPN 50V SOT1123

Similar Products

Part Number SMUN5233T1G SMUN5235T1G SMUN5133T1G SMUN5213T1G SMUN5232T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 2.2 kOhms 4.7 kOhms 47 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms 47 kOhms 47 kOhms 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - -
Power - Max 202 mW 202 mW 202 mW 202 mW 230 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323)

Related Product By Categories

MUN2114T1G
MUN2114T1G
onsemi
TRANS PREBIAS PNP 50V 100MA SC59
PDTB123YT,215
PDTB123YT,215
Nexperia USA Inc.
TRANS PREBIAS PNP 50V TO236AB
SMMUN2113LT1G
SMMUN2113LT1G
onsemi
TRANS PREBIAS PNP 50V SOT23-3
MUN2111T1G
MUN2111T1G
onsemi
TRANS PREBIAS PNP 50V 100MA SC59
SDTC114EET1G
SDTC114EET1G
onsemi
TRANS PREBIAS NPN 50V 100MA SC75
PDTC114EE,115
PDTC114EE,115
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC75
PDTC114YE,135
PDTC114YE,135
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC75
PDTC114TE,115
PDTC114TE,115
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC75
PDTC114TEF,115
PDTC114TEF,115
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC89
PDTC143EU/ZLX
PDTC143EU/ZLX
Nexperia USA Inc.
PDTC143EU/ZLX
PDTC144ET/DG/B2,21
PDTC144ET/DG/B2,21
Nexperia USA Inc.
TRANS RET TO-236AB
PDTB123YT/APGR
PDTB123YT/APGR
Nexperia USA Inc.
PDTB123YT/APGR

Related Product By Brand

SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT