SMUN5233T1G
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onsemi SMUN5233T1G

Manufacturer No:
SMUN5233T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMUN5233T1G is a digital transistor from onsemi, part of the MUN5233 series. This device is designed to integrate a single transistor with a monolithic bias resistor network, simplifying circuit design and reducing the need for external components. The SMUN5233T1G is packaged in a SC-70/SOT-323 case, making it suitable for applications where space is limited.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Cutoff Current ICBO - - 100 nA
Collector-Emitter Cutoff Current ICEO - - 500 nA
Emitter-Base Cutoff Current IEBO - - 0.18 mA
Collector-Base Breakdown Voltage V(BR)CBO 50 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - V
DC Current Gain hFE 80 200 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 V
Total Device Dissipation at TA = 25°C PD 202 - 310 mW
Thermal Resistance, Junction to Ambient RθJA 618 - 403 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
  • Reduces Board Space: Compact SC-70/SOT-323 package makes it ideal for space-constrained applications.
  • Reduces Component Count: Combines multiple components into a single device, simplifying the overall design and reducing costs.
  • High Reliability: AEC-Q101 qualified and PPAP capable, ensuring high reliability for automotive and other demanding applications.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and high reliability.
  • Consumer Electronics: Ideal for use in consumer electronics where space and component count are critical.
  • Industrial Control Systems: Can be used in industrial control systems where simplicity and reliability are essential.
  • General Purpose Switching: Applicable in general-purpose switching applications requiring a compact and reliable transistor solution.

Q & A

  1. What is the SMUN5233T1G?

    The SMUN5233T1G is a digital transistor from onsemi, part of the MUN5233 series, designed to integrate a single transistor with a monolithic bias resistor network.

  2. What package type does the SMUN5233T1G use?

    The SMUN5233T1G is packaged in a SC-70/SOT-323 case.

  3. What are the key benefits of using the SMUN5233T1G?

    It simplifies circuit design, reduces board space, and reduces component count.

  4. What is the maximum collector-emitter breakdown voltage of the SMUN5233T1G?

    The maximum collector-emitter breakdown voltage is 50 V.

  5. What is the typical DC current gain of the SMUN5233T1G?

    The typical DC current gain (hFE) is 200.

  6. What is the thermal resistance, junction to ambient, for the SMUN5233T1G?

    The thermal resistance, junction to ambient, is 618 °C/W.

  7. What is the junction and storage temperature range for the SMUN5233T1G?

    The junction and storage temperature range is -55°C to 150°C.

  8. Is the SMUN5233T1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

  9. What are some common applications of the SMUN5233T1G?

    It is commonly used in automotive systems, consumer electronics, industrial control systems, and general-purpose switching applications.

  10. How does the SMUN5233T1G reduce component count?

    It integrates a single transistor with a monolithic bias resistor network, eliminating the need for external resistors.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:202 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Similar Products

Part Number SMUN5233T1G SMUN5235T1G SMUN5133T1G SMUN5213T1G SMUN5232T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 2.2 kOhms 4.7 kOhms 47 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms 47 kOhms 47 kOhms 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - -
Power - Max 202 mW 202 mW 202 mW 202 mW 230 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323)

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