Overview
The NSVMMUN2233LT3G is a digital transistor from onsemi, part of the MUN2233 series. This device is designed to replace a single transistor and its external resistor bias network, integrating a monolithic bias resistor network. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The NSVMMUN2233LT3G is particularly useful in applications where space and component minimization are critical.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nA |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nA |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.18 | mA |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | V |
| Total Device Dissipation at TA = 25°C | PD | 246 | - | 400 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 508 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies circuit design by integrating a monolithic bias resistor network.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free package, indicating compliance with environmental regulations.
- Available in SOT-23 package, which is compact and suitable for space-constrained designs.
Applications
The NSVMMUN2233LT3G is versatile and can be used in various applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- Consumer electronics: Ideal for devices where space and component minimization are important.
- Industrial control systems: Useful in applications requiring reliable and compact transistor solutions.
- Medical devices: Can be used in medical equipment where precision and reliability are crucial.
Q & A
- What is the NSVMMUN2233LT3G used for? The NSVMMUN2233LT3G is a digital transistor designed to replace a single transistor and its external resistor bias network, simplifying circuit design and reducing board space.
- What package type does the NSVMMUN2233LT3G come in? The NSVMMUN2233LT3G comes in a SOT-23 package.
- Is the NSVMMUN2233LT3G Pb-free? Yes, the NSVMMUN2233LT3G is Pb-free, complying with environmental regulations.
- What is the junction and storage temperature range for the NSVMMUN2233LT3G? The junction and storage temperature range is -55°C to +150°C.
- What are the thermal characteristics of the NSVMMUN2233LT3G? The total device dissipation at TA = 25°C is 246 mW to 400 mW, and the thermal resistance, junction to ambient, is 508 °C/W.
- Is the NSVMMUN2233LT3G AEC-Q101 qualified? Yes, the NSVMMUN2233LT3G is AEC-Q101 qualified and PPAP capable.
- What are some common applications for the NSVMMUN2233LT3G? Common applications include automotive systems, consumer electronics, industrial control systems, and medical devices.
- How does the NSVMMUN2233LT3G simplify circuit design? It integrates a monolithic bias resistor network, eliminating the need for external resistors and simplifying the circuit design.
- What is the collector-base cutoff current for the NSVMMUN2233LT3G? The collector-base cutoff current (ICBO) is up to 100 nA.
- What is the collector-base breakdown voltage for the NSVMMUN2233LT3G? The collector-base breakdown voltage (V(BR)CBO) is 50 V.
