MMBT2907ALT1G
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onsemi MMBT2907ALT1G

Manufacturer No:
MMBT2907ALT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 0.6A SOT23-3
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The MMBT2907ALT1G is a general-purpose PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for small signal applications and is known for its reliability and performance in various electronic circuits. It is packaged in a SOT-23 case, making it suitable for surface mount technology (SMT) and compact designs. The MMBT2907ALT1G is RoHS compliant, lead-free, and halogen-free, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Parameter Value Unit
Transistor Type PNP
Maximum DC Collector Current -600 mA
Maximum Collector Emitter Voltage -60 V
Maximum Collector Base Voltage -60 V
Maximum Emitter Base Voltage -5 V
Maximum Power Dissipation 350 mW
Minimum DC Current Gain 100
Transistor Configuration Single
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Dimensions 3.04 x 1.4 x 1.01 mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Transition Frequency 200 MHz

Key Features

  • AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
  • RoHS Compliant: Lead-free, halogen-free, and compliant with RoHS standards.
  • High Current Gain: Minimum DC current gain of 100, ensuring reliable amplification.
  • High Transition Frequency: Up to 200 MHz, making it suitable for high-frequency applications.
  • Compact Packaging: SOT-23 package for surface mount technology, ideal for compact designs.
  • Wide Operating Temperature Range: From -55°C to +150°C, suitable for various environmental conditions.

Applications

  • Automotive Electronics: Qualified to AEC-Q101 standards, making it suitable for automotive applications.
  • General Purpose Amplification: Used in various small signal amplification circuits.
  • Switching Circuits: Can be used in switching applications due to its high transition frequency.
  • Consumer Electronics: Suitable for use in consumer electronic devices requiring compact and reliable transistor solutions.

Q & A

  1. What is the maximum collector current of the MMBT2907ALT1G?

    The maximum DC collector current is -600 mA.

  2. What is the maximum collector-emitter voltage of the MMBT2907ALT1G?

    The maximum collector-emitter voltage is -60 V.

  3. What is the package type of the MMBT2907ALT1G?

    The package type is SOT-23.

  4. Is the MMBT2907ALT1G RoHS compliant?
  5. What is the minimum DC current gain of the MMBT2907ALT1G?

    The minimum DC current gain is 100.

  6. What is the maximum operating temperature of the MMBT2907ALT1G?

    The maximum operating temperature is +150°C.

  7. What is the transition frequency of the MMBT2907ALT1G?

    The transition frequency is up to 200 MHz.

  8. Is the MMBT2907ALT1G suitable for automotive applications?
  9. What is the maximum power dissipation of the MMBT2907ALT1G?

    The maximum power dissipation is 350 mW.

  10. What are the dimensions of the MMBT2907ALT1G?

    The dimensions are 3.04 x 1.4 x 1.01 mm.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:300 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

$0.19
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Same Series
SMMBT2907ALT1G
SMMBT2907ALT1G
TRANS PNP 60V 0.6A SOT23-3
MMBT2907ALT3G
MMBT2907ALT3G
TRANS PNP 60V 0.6A SOT23-3
SMMBT2907ALT3G
SMMBT2907ALT3G
TRANS PNP 60V 0.6A SOT23-3

Similar Products

Part Number MMBT2907ALT1G MMBT2907ALT3G MMBT2907AWT1G MMBT2907ALT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO) - 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 300 mW 300 mW 150 mW 225 mW
Frequency - Transition 200MHz 200MHz 200MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236)

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