MMBT2907ALT3G
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onsemi MMBT2907ALT3G

Manufacturer No:
MMBT2907ALT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 0.6A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2907ALT3G is a PNP silicon general-purpose transistor manufactured by onsemi. This device is part of the MMBT2907AL series and is available in the SOT-23 (TO-236AB) package. It is designed to meet the requirements of various applications, including automotive and other sectors that demand unique site and control change requirements. The MMBT2907ALT3G is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with industry standards.

The transistor is lead-free, halogen-free, and RoHS compliant, making it environmentally friendly. It features a robust set of electrical and thermal characteristics, making it suitable for a wide range of electronic circuits.

Key Specifications

Characteristic Symbol Min Max Unit
Collector-Emitter Voltage VCEO -60 -60 Vdc
Collector-Base Voltage VCBO -60 -60 Vdc
Emitter-Base Voltage VEBO -5.0 -5.0 Vdc
Collector Current - Continuous IC -600 -600 mAdc
Collector Current - Peak ICM -1200 -1200 mAdc
Total Device Dissipation - FR-5 Board PD 225 1.8... mW/°C mW
Thermal Resistance, Junction-to-Ambient RJA 556 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) hFE 75 300
Collector-Emitter Saturation Voltage (IC = -150 mAdc, IB = -15 mAdc) VCE(sat) -0.4 -1.6 Vdc
Base-Emitter Saturation Voltage (IC = -150 mAdc, IB = -15 mAdc) VBE(sat) -1.3 -2.6 Vdc
Current-Gain - Bandwidth Product (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) fT 200 MHz

Key Features

  • AEC-Q101 Qualified and PPAP Capable: Meets automotive and other stringent application requirements.
  • Lead-Free, Halogen-Free, and RoHS Compliant: Environmentally friendly and compliant with global regulations.
  • High DC Current Gain: Up to 300 at IC = -0.1 mAdc and VCE = -10 Vdc.
  • Low Collector-Emitter Saturation Voltage: As low as -0.4 V at IC = -150 mAdc and IB = -15 mAdc.
  • High Current-Gain - Bandwidth Product: 200 MHz at IC = -50 mAdc, VCE = -20 Vdc, and f = 100 MHz.
  • Fast Switching Times: Turn-on time of 45 ns, turn-off time of 100 ns, and storage time of 80 ns.
  • Wide Operating Temperature Range: Junction and storage temperature range from -55°C to +150°C.

Applications

  • Automotive Electronics: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • General Purpose Amplification: Can be used in a wide range of amplification circuits due to its high DC current gain and low saturation voltages.
  • Switching Circuits: Ideal for switching applications with its fast switching times and high current handling capability.
  • Consumer Electronics: Used in various consumer electronic devices requiring reliable and efficient transistor performance.
  • Industrial Control Systems: Suitable for industrial control systems that require robust and reliable transistor performance.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT2907ALT3G?

    The maximum collector-emitter voltage (VCEO) is -60 Vdc.

  2. Is the MMBT2907ALT3G RoHS compliant?
  3. What is the DC current gain of the MMBT2907ALT3G at IC = -0.1 mAdc and VCE = -10 Vdc?

    The DC current gain (hFE) is up to 300 at these conditions.

  4. What is the typical turn-on time of the MMBT2907ALT3G?

    The typical turn-on time (ton) is 45 ns.

  5. What is the maximum junction temperature of the MMBT2907ALT3G?

    The maximum junction temperature (TJ) is +150°C.

  6. What package type is the MMBT2907ALT3G available in?

    The MMBT2907ALT3G is available in the SOT-23 (TO-236AB) package.

  7. Is the MMBT2907ALT3G suitable for automotive applications?
  8. What is the collector-emitter saturation voltage at IC = -150 mAdc and IB = -15 mAdc?

    The collector-emitter saturation voltage (VCE(sat)) is -0.4 V at these conditions.

  9. What is the current-gain - bandwidth product of the MMBT2907ALT3G?

    The current-gain - bandwidth product (fT) is 200 MHz at IC = -50 mAdc, VCE = -20 Vdc, and f = 100 MHz.

  10. What are the typical applications of the MMBT2907ALT3G?

    The MMBT2907ALT3G is used in automotive electronics, general-purpose amplification, switching circuits, consumer electronics, and industrial control systems.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:300 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
SMMBT2907ALT1G
SMMBT2907ALT1G
TRANS PNP 60V 0.6A SOT23-3
MMBT2907ALT3G
MMBT2907ALT3G
TRANS PNP 60V 0.6A SOT23-3
SMMBT2907ALT3G
SMMBT2907ALT3G
TRANS PNP 60V 0.6A SOT23-3

Similar Products

Part Number MMBT2907ALT3G MMBT2907ALT1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 300 mW 300 mW
Frequency - Transition 200MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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