BC858B,235
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Nexperia USA Inc. BC858B,235

Manufacturer No:
BC858B,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC858B,235 is a PNP general-purpose transistor manufactured by Nexperia USA Inc. This transistor is housed in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for a wide range of applications where space is limited. The BC858B is part of Nexperia’s extensive portfolio of bipolar transistors, known for their reliability and performance in various electronic designs.

Key Specifications

Parameter Value
Type PNP general-purpose transistor
Package SOT23 (TO-236AB)
Package Size 2.9 x 1.3 x 1 mm
Maximum Collector-Emitter Voltage (VCEO) -30 V
Maximum Collector Current (IC) -100 mA
Minimum DC Current Gain (hFE) 220
Maximum DC Current Gain (hFE) 475
Maximum Junction Temperature (TJ) 150°C
Transition Frequency (fT) 100 MHz
Power Dissipation (Ptot) 250 mW
VCE Saturation (Max) @ IB, IC 650 mV @ 5 mA, 100 mA
Automotive Qualified Yes (AEC-Q101)

Key Features

  • Compact Package: The SOT23 package is ideal for space-constrained designs, offering a small footprint without compromising performance.
  • High Reliability: The BC858B is automotive qualified to AEC-Q101 standards, ensuring high reliability and durability in demanding applications.
  • Wide Operating Range: With a maximum junction temperature of 150°C and a transition frequency of 100 MHz, this transistor is versatile and can handle various operating conditions.
  • Low VCE Saturation: The transistor features a low VCE saturation voltage, which helps in reducing power losses and improving overall efficiency.
  • RoHS Compliant: The BC858B is RoHS compliant, making it suitable for use in environmentally friendly designs.

Applications

The BC858B,235 transistor is suitable for a variety of applications across different industries, including:

  • Automotive: Given its AEC-Q101 qualification, it is widely used in automotive systems, such as in ADAS (Advanced Driver Assistance Systems) and automotive electrification.
  • Industrial: It can be used in industrial control systems, power supplies, and other industrial electronics where reliability and performance are critical.
  • Consumer Electronics: The transistor is also used in consumer electronics, such as in audio amplifiers, switching circuits, and general-purpose amplification.
  • Mobile and Wearables: Its compact size and high performance make it suitable for use in mobile devices and wearable technology.

Q & A

  1. What is the package type of the BC858B,235 transistor?

    The BC858B,235 transistor is housed in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.

  2. What is the maximum collector-emitter voltage (VCEO) of the BC858B,235?

    The maximum collector-emitter voltage (VCEO) is -30 V.

  3. What is the maximum collector current (IC) of the BC858B,235?

    The maximum collector current (IC) is -100 mA.

  4. What is the minimum DC current gain (hFE) of the BC858B,235?

    The minimum DC current gain (hFE) is 220.

  5. What is the maximum junction temperature (TJ) of the BC858B,235?

    The maximum junction temperature (TJ) is 150°C.

  6. Is the BC858B,235 transistor automotive qualified?

    Yes, the BC858B,235 is automotive qualified to AEC-Q101 standards.

  7. What is the transition frequency (fT) of the BC858B,235?

    The transition frequency (fT) is 100 MHz.

  8. What is the power dissipation (Ptot) of the BC858B,235?

    The power dissipation (Ptot) is 250 mW.

  9. Is the BC858B,235 RoHS compliant?

    Yes, the BC858B,235 is RoHS compliant.

  10. What are some common applications of the BC858B,235 transistor?

    The BC858B,235 is used in automotive, industrial, consumer electronics, and mobile and wearable technology applications.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number BC858B,235 BC858B,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

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