Overview
The BC857,235 is a PNP general-purpose bipolar transistor manufactured by Nexperia USA Inc. This transistor is part of the BC857 series, known for its low current and low voltage characteristics, making it suitable for a wide range of applications. The BC857,235 is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, which is ideal for space-constrained designs. It is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding environments.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 45 | V | |||
| Vce Saturation (Max) @ Ib, Ic | @ 5mA, 100mA | 650mV | |||
| Transistor Type | PNP | ||||
| Supplier Device Package | SOT-23 | ||||
| Series | Automotive, AEC-Q101 | ||||
| Power - Max | 250 mW | ||||
| Package / Case | TO-236-3, SC-59, SOT-23-3 | ||||
| Operating Temperature | 150°C (TJ) | ||||
| Mounting Type | Surface Mount | ||||
| Frequency - Transition | 100MHz | ||||
| DC Current Gain (hFE) (Min) @ Ic, Vce | @ 2mA, 5V | 420 | 800 | ||
| Current - Collector Cutoff (Max) | 15nA (ICBO) | ||||
| Current - Collector (Ic) (Max) | 100 mA |
Key Features
- Low Current and Voltage: The BC857,235 has a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V, making it suitable for low-power applications.
- AEC-Q101 Qualified: This transistor is qualified to the AEC-Q101 standard, ensuring its reliability in automotive and other demanding environments.
- Small SOT23 Package: The transistor is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, ideal for space-constrained designs.
- High DC Current Gain: The BC857,235 has a high DC current gain (hFE) of 420 to 800 at 2 mA and 5 V, ensuring good amplification characteristics.
- Low Vce Saturation: The transistor has a low Vce saturation voltage of 650 mV at 5 mA and 100 mA, which is beneficial for reducing power consumption.
Applications
The BC857,235 is versatile and can be used in various applications, including:
- General-purpose switching and amplification: It is suitable for general-purpose switching and amplification in electronic circuits.
- Automotive applications: Given its AEC-Q101 qualification, it is widely used in automotive systems where reliability and robustness are critical.
- Industrial and consumer electronics: The transistor can be used in industrial control circuits, consumer electronics, and other applications requiring low-power, high-reliability components.
Q & A
- What is the maximum collector current of the BC857,235 transistor?
The maximum collector current of the BC857,235 transistor is 100 mA.
- What is the maximum collector-emitter voltage of the BC857,235 transistor?
The maximum collector-emitter voltage of the BC857,235 transistor is 45 V.
- What package type is the BC857,235 transistor available in?
The BC857,235 transistor is available in the SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
- Is the BC857,235 transistor AEC-Q101 qualified?
Yes, the BC857,235 transistor is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.
- What is the typical DC current gain (hFE) of the BC857,235 transistor?
The typical DC current gain (hFE) of the BC857,235 transistor is between 420 and 800 at 2 mA and 5 V.
- What is the operating temperature range of the BC857,235 transistor?
The operating temperature range of the BC857,235 transistor is up to 150°C (TJ).
- What are some common applications of the BC857,235 transistor?
The BC857,235 transistor is commonly used in general-purpose switching and amplification, automotive applications, and industrial and consumer electronics.
- What is the frequency transition of the BC857,235 transistor?
The frequency transition of the BC857,235 transistor is 100 MHz.
- How much power can the BC857,235 transistor handle?
The BC857,235 transistor can handle a maximum power of 250 mW.
- What is the Vce saturation voltage of the BC857,235 transistor?
The Vce saturation voltage of the BC857,235 transistor is 650 mV at 5 mA and 100 mA.
