SMMBT2907ALT1G
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onsemi SMMBT2907ALT1G

Manufacturer No:
SMMBT2907ALT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 0.6A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMBT2907ALT1G is a PNP silicon general-purpose transistor manufactured by onsemi. This device is part of the MMBT2907AL series and is available in a Pb-free SOT-23 (TO-236AB) package. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The transistor is also RoHS compliant, halogen-free, and BFR-free, aligning with modern environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -60 Vdc
Collector-Base Voltage VCBO -60 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current - Continuous IC -600 mAdc
Collector Current - Peak ICM -1200 mAdc
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RJA 556 °C/W
DC Current Gain (IC = -1.0 mA, VCE = -10 Vdc) hFE 100
Collector-Emitter Saturation Voltage (IC = -150 mA, IB = -15 mA) VCE(sat) -0.4 Vdc
Base-Emitter Saturation Voltage (IC = -150 mA, IB = -15 mA) VBE(sat) -1.3 Vdc
Current-Gain - Bandwidth Product (IC = -50 mA, VCE = -20 Vdc, f = 100 MHz) fT 200 MHz

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and BFR-free, ensuring compliance with environmental regulations.
  • Available in SOT-23 (TO-236AB) package, which is compact and suitable for space-constrained designs.
  • High DC current gain (hFE) of up to 100 at IC = -1.0 mA and VCE = -10 Vdc.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
  • High current-gain - bandwidth product (fT) of 200 MHz at IC = -50 mA and VCE = -20 Vdc.
  • Fast switching times with turn-on time (ton) of 45 ns and turn-off time (toff) of 100 ns.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • General-purpose amplification: Can be used in a wide range of amplification circuits due to its high DC current gain and low saturation voltages.
  • Switching circuits: Ideal for switching applications with its fast turn-on and turn-off times.
  • Consumer electronics: Used in various consumer electronic devices where compact packaging and high performance are required.
  • Industrial control systems: Suitable for industrial control and automation systems that require reliable and high-performance components.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the SMMBT2907ALT1G transistor?

    The maximum collector-emitter voltage (VCEO) is -60 Vdc.

  2. Is the SMMBT2907ALT1G transistor RoHS compliant?

    Yes, the SMMBT2907ALT1G transistor is RoHS compliant, halogen-free, and BFR-free.

  3. What is the DC current gain (hFE) of the SMMBT2907ALT1G transistor at IC = -1.0 mA and VCE = -10 Vdc?

    The DC current gain (hFE) is up to 100.

  4. What is the typical turn-on time (ton) of the SMMBT2907ALT1G transistor?

    The typical turn-on time (ton) is 45 ns.

  5. What is the current-gain - bandwidth product (fT) of the SMMBT2907ALT1G transistor?

    The current-gain - bandwidth product (fT) is 200 MHz at IC = -50 mA and VCE = -20 Vdc.

  6. What are the typical applications of the SMMBT2907ALT1G transistor?

    The transistor is suitable for automotive systems, general-purpose amplification, switching circuits, consumer electronics, and industrial control systems.

  7. What is the maximum collector current (IC) of the SMMBT2907ALT1G transistor?

    The maximum continuous collector current (IC) is -600 mA, and the peak collector current (ICM) is -1200 mA.

  8. What is the thermal resistance, junction-to-ambient (RJA), for the SMMBT2907ALT1G transistor on an FR-5 board?

    The thermal resistance, junction-to-ambient (RJA), is 556 °C/W on an FR-5 board.

  9. What is the base-emitter saturation voltage (VBE(sat)) of the SMMBT2907ALT1G transistor at IC = -150 mA and IB = -15 mA?

    The base-emitter saturation voltage (VBE(sat)) is -1.3 Vdc.

  10. What is the package type of the SMMBT2907ALT1G transistor?

    The transistor is available in a Pb-free SOT-23 (TO-236AB) package.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:300 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
SMMBT2907ALT1G
SMMBT2907ALT1G
TRANS PNP 60V 0.6A SOT23-3
MMBT2907ALT3G
MMBT2907ALT3G
TRANS PNP 60V 0.6A SOT23-3
SMMBT2907ALT3G
SMMBT2907ALT3G
TRANS PNP 60V 0.6A SOT23-3

Similar Products

Part Number SMMBT2907ALT1G SMMBT2907ALT3G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 300 mW 300 mW
Frequency - Transition 200MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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