SMMBT2907ALT1G
  • Share:

onsemi SMMBT2907ALT1G

Manufacturer No:
SMMBT2907ALT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 0.6A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMBT2907ALT1G is a PNP silicon general-purpose transistor manufactured by onsemi. This device is part of the MMBT2907AL series and is available in a Pb-free SOT-23 (TO-236AB) package. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The transistor is also RoHS compliant, halogen-free, and BFR-free, aligning with modern environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -60 Vdc
Collector-Base Voltage VCBO -60 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current - Continuous IC -600 mAdc
Collector Current - Peak ICM -1200 mAdc
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RJA 556 °C/W
DC Current Gain (IC = -1.0 mA, VCE = -10 Vdc) hFE 100
Collector-Emitter Saturation Voltage (IC = -150 mA, IB = -15 mA) VCE(sat) -0.4 Vdc
Base-Emitter Saturation Voltage (IC = -150 mA, IB = -15 mA) VBE(sat) -1.3 Vdc
Current-Gain - Bandwidth Product (IC = -50 mA, VCE = -20 Vdc, f = 100 MHz) fT 200 MHz

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and BFR-free, ensuring compliance with environmental regulations.
  • Available in SOT-23 (TO-236AB) package, which is compact and suitable for space-constrained designs.
  • High DC current gain (hFE) of up to 100 at IC = -1.0 mA and VCE = -10 Vdc.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
  • High current-gain - bandwidth product (fT) of 200 MHz at IC = -50 mA and VCE = -20 Vdc.
  • Fast switching times with turn-on time (ton) of 45 ns and turn-off time (toff) of 100 ns.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • General-purpose amplification: Can be used in a wide range of amplification circuits due to its high DC current gain and low saturation voltages.
  • Switching circuits: Ideal for switching applications with its fast turn-on and turn-off times.
  • Consumer electronics: Used in various consumer electronic devices where compact packaging and high performance are required.
  • Industrial control systems: Suitable for industrial control and automation systems that require reliable and high-performance components.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the SMMBT2907ALT1G transistor?

    The maximum collector-emitter voltage (VCEO) is -60 Vdc.

  2. Is the SMMBT2907ALT1G transistor RoHS compliant?

    Yes, the SMMBT2907ALT1G transistor is RoHS compliant, halogen-free, and BFR-free.

  3. What is the DC current gain (hFE) of the SMMBT2907ALT1G transistor at IC = -1.0 mA and VCE = -10 Vdc?

    The DC current gain (hFE) is up to 100.

  4. What is the typical turn-on time (ton) of the SMMBT2907ALT1G transistor?

    The typical turn-on time (ton) is 45 ns.

  5. What is the current-gain - bandwidth product (fT) of the SMMBT2907ALT1G transistor?

    The current-gain - bandwidth product (fT) is 200 MHz at IC = -50 mA and VCE = -20 Vdc.

  6. What are the typical applications of the SMMBT2907ALT1G transistor?

    The transistor is suitable for automotive systems, general-purpose amplification, switching circuits, consumer electronics, and industrial control systems.

  7. What is the maximum collector current (IC) of the SMMBT2907ALT1G transistor?

    The maximum continuous collector current (IC) is -600 mA, and the peak collector current (ICM) is -1200 mA.

  8. What is the thermal resistance, junction-to-ambient (RJA), for the SMMBT2907ALT1G transistor on an FR-5 board?

    The thermal resistance, junction-to-ambient (RJA), is 556 °C/W on an FR-5 board.

  9. What is the base-emitter saturation voltage (VBE(sat)) of the SMMBT2907ALT1G transistor at IC = -150 mA and IB = -15 mA?

    The base-emitter saturation voltage (VBE(sat)) is -1.3 Vdc.

  10. What is the package type of the SMMBT2907ALT1G transistor?

    The transistor is available in a Pb-free SOT-23 (TO-236AB) package.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:300 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.28
3,083

Please send RFQ , we will respond immediately.

Same Series
SMMBT2907ALT1G
SMMBT2907ALT1G
TRANS PNP 60V 0.6A SOT23-3
MMBT2907ALT3G
MMBT2907ALT3G
TRANS PNP 60V 0.6A SOT23-3
SMMBT2907ALT3G
SMMBT2907ALT3G
TRANS PNP 60V 0.6A SOT23-3

Similar Products

Part Number SMMBT2907ALT1G SMMBT2907ALT3G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 300 mW 300 mW
Frequency - Transition 200MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

BC817-16LT1G
BC817-16LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
TIP142T
TIP142T
STMicroelectronics
TRANS NPN DARL 100V 10A TO220
BC817-25W_R1_00001
BC817-25W_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323
BFS20W,115
BFS20W,115
Nexperia USA Inc.
TRANS NPN 20V 0.025A SOT323
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
NSV1C201LT1G
NSV1C201LT1G
onsemi
TRANS NPN 100V 2A SOT23-3
MJB44H11G
MJB44H11G
onsemi
TRANS NPN 80V 10A D2PAK
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BD1366STU
BD1366STU
onsemi
TRANS PNP 45V 1.5A TO126-3

Related Product By Brand

FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO