BC858B-QR
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Nexperia USA Inc. BC858B-QR

Manufacturer No:
BC858B-QR
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
TRANS PNP 30V 0.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC858B-QR is a PNP general-purpose bipolar transistor manufactured by Nexperia USA Inc. This transistor is part of the BC858 series, known for its low current and low voltage capabilities, making it suitable for a wide range of applications. The BC858B-QR is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, which is ideal for space-constrained designs.

Qualified according to AEC-Q101, this transistor is recommended for use in automotive applications, as well as other general-purpose switching and amplification roles. Its compact size and robust specifications make it a versatile component in modern electronic designs.

Key Specifications

Parameter Value Unit
Package SOT23 (TO-236AB) -
Channel Type PNP -
Total Power Dissipation (Ptot) 250.0 mW
Maximum Collector-Emitter Voltage (VCEO) 65 V
Maximum Continuous Collector Current (IC) 100 mA
Minimum Current Gain (hFE) 220 -
Maximum Current Gain (hFE) 475 -
Maximum Junction Temperature (TJ) 150 °C
Minimum Transition Frequency (fT) 100 MHz
Automotive Qualified Yes -

Key Features

  • Low current capability: Maximum continuous collector current of 100 mA.
  • Low voltage capability: Maximum collector-emitter voltage of 65 V.
  • Compact packaging: SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
  • AEC-Q101 qualified: Suitable for automotive applications.
  • High current gain: Minimum current gain of 220 and maximum of 475.
  • High transition frequency: Minimum of 100 MHz.
  • RoHS compliant: Lead-free finish.

Applications

  • Automotive applications: Qualified according to AEC-Q101, making it suitable for use in automotive systems.
  • General-purpose switching and amplification: Ideal for signal switching and amplification roles.
  • Linear applications: Suitable for linear amplifier circuits.
  • Industrial and consumer electronics: Can be used in various industrial and consumer electronic devices requiring low current and low voltage transistors.

Q & A

  1. What is the maximum collector-emitter voltage of the BC858B-QR transistor?

    The maximum collector-emitter voltage (VCEO) of the BC858B-QR transistor is 65 V.

  2. What is the package type of the BC858B-QR transistor?

    The BC858B-QR transistor is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.

  3. Is the BC858B-QR transistor qualified for automotive applications?

    Yes, the BC858B-QR transistor is qualified according to AEC-Q101 and is recommended for use in automotive applications.

  4. What is the maximum continuous collector current of the BC858B-QR transistor?

    The maximum continuous collector current (IC) of the BC858B-QR transistor is 100 mA.

  5. What is the minimum current gain of the BC858B-QR transistor?

    The minimum current gain (hFE) of the BC858B-QR transistor is 220.

  6. What is the maximum transition frequency of the BC858B-QR transistor?

    The minimum transition frequency (fT) of the BC858B-QR transistor is 100 MHz.

  7. Is the BC858B-QR transistor RoHS compliant?

    Yes, the BC858B-QR transistor is RoHS compliant with a lead-free finish.

  8. What are the typical applications of the BC858B-QR transistor?

    The BC858B-QR transistor is typically used for general-purpose switching and amplification, linear applications, and automotive systems.

  9. What is the maximum junction temperature of the BC858B-QR transistor?

    The maximum junction temperature (TJ) of the BC858B-QR transistor is 150 °C.

  10. Where can I purchase the BC858B-QR transistor?

    The BC858B-QR transistor can be purchased from various distributors such as Digi-Key, Mouser, and X-On Electronics, as well as directly from Nexperia.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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