PSMN1R4-30YLD/1X
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Nexperia USA Inc. PSMN1R4-30YLD/1X

Manufacturer No:
PSMN1R4-30YLD/1X
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
DIODE ARRAY SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN1R4-30YLD/1X is a high-performance N-channel enhancement mode MOSFET from Nexperia USA Inc. This device is part of the NextPowerS3 portfolio, which utilizes Nexperia's unique 'SchottkyPlus' technology. This technology combines the benefits of a low RDS(on) MOSFET with the advantages of a Schottky diode, resulting in improved efficiency and reduced losses.

Key Specifications

Parameter Value Unit
Manufacturer Nexperia USA Inc.
Part Number PSMN1R4-30YLD/1X
Package LFPAK56
VDS (Drain-Source Voltage) 30 V
VGS (Gate-Source Voltage) 20 V
ID (Continuous Drain Current) 100 A
RDS(on) (On-Resistance) 1.42 mΩ @ 25 A, 10 V Ω
Power Dissipation (Max) 166 W (Tc) W
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Logic level gate drive for easy control.
  • NextPowerS3 technology with 'SchottkyPlus' for enhanced efficiency and reduced losses.
  • Low RDS(on) of 1.42 mΩ @ 25 A, 10 V for minimal power dissipation.
  • High continuous drain current of 100 A.
  • LFPAK56 package for high power density and thermal efficiency.
  • ROHS3 compliant, ensuring environmental sustainability.

Applications

  • Power management in high-performance applications such as servers, data centers, and cloud computing infrastructure.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power supplies and motor control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-efficiency power conversion in consumer electronics and appliances.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN1R4-30YLD/1X?

    30 V.

  2. What is the continuous drain current (ID) of this MOSFET?

    100 A.

  3. What is the on-resistance (RDS(on)) of the PSMN1R4-30YLD/1X?

    1.42 mΩ @ 25 A, 10 V.

  4. What package type is used for the PSMN1R4-30YLD/1X?

    LFPAK56.

  5. Is the PSMN1R4-30YLD/1X ROHS compliant?
  6. What is the maximum power dissipation of the PSMN1R4-30YLD/1X?

    166 W (Tc).

  7. What technology does the PSMN1R4-30YLD/1X use?

    Nexperia's NextPowerS3 technology with 'SchottkyPlus'.

  8. What are some common applications for the PSMN1R4-30YLD/1X?

    Power management in servers, automotive systems, industrial power supplies, renewable energy systems, and high-efficiency power conversion in consumer electronics.

  9. What is the gate-source voltage (VGS) of the PSMN1R4-30YLD/1X?

    20 V.

  10. What is the moisture sensitivity level (MSL) of the PSMN1R4-30YLD/1X?

    1 (Unlimited).

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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