PSMN1R4-30YLD/1X
  • Share:

Nexperia USA Inc. PSMN1R4-30YLD/1X

Manufacturer No:
PSMN1R4-30YLD/1X
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
DIODE ARRAY SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN1R4-30YLD/1X is a high-performance N-channel enhancement mode MOSFET from Nexperia USA Inc. This device is part of the NextPowerS3 portfolio, which utilizes Nexperia's unique 'SchottkyPlus' technology. This technology combines the benefits of a low RDS(on) MOSFET with the advantages of a Schottky diode, resulting in improved efficiency and reduced losses.

Key Specifications

Parameter Value Unit
Manufacturer Nexperia USA Inc.
Part Number PSMN1R4-30YLD/1X
Package LFPAK56
VDS (Drain-Source Voltage) 30 V
VGS (Gate-Source Voltage) 20 V
ID (Continuous Drain Current) 100 A
RDS(on) (On-Resistance) 1.42 mΩ @ 25 A, 10 V Ω
Power Dissipation (Max) 166 W (Tc) W
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Logic level gate drive for easy control.
  • NextPowerS3 technology with 'SchottkyPlus' for enhanced efficiency and reduced losses.
  • Low RDS(on) of 1.42 mΩ @ 25 A, 10 V for minimal power dissipation.
  • High continuous drain current of 100 A.
  • LFPAK56 package for high power density and thermal efficiency.
  • ROHS3 compliant, ensuring environmental sustainability.

Applications

  • Power management in high-performance applications such as servers, data centers, and cloud computing infrastructure.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power supplies and motor control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-efficiency power conversion in consumer electronics and appliances.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN1R4-30YLD/1X?

    30 V.

  2. What is the continuous drain current (ID) of this MOSFET?

    100 A.

  3. What is the on-resistance (RDS(on)) of the PSMN1R4-30YLD/1X?

    1.42 mΩ @ 25 A, 10 V.

  4. What package type is used for the PSMN1R4-30YLD/1X?

    LFPAK56.

  5. Is the PSMN1R4-30YLD/1X ROHS compliant?
  6. What is the maximum power dissipation of the PSMN1R4-30YLD/1X?

    166 W (Tc).

  7. What technology does the PSMN1R4-30YLD/1X use?

    Nexperia's NextPowerS3 technology with 'SchottkyPlus'.

  8. What are some common applications for the PSMN1R4-30YLD/1X?

    Power management in servers, automotive systems, industrial power supplies, renewable energy systems, and high-efficiency power conversion in consumer electronics.

  9. What is the gate-source voltage (VGS) of the PSMN1R4-30YLD/1X?

    20 V.

  10. What is the moisture sensitivity level (MSL) of the PSMN1R4-30YLD/1X?

    1 (Unlimited).

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
544

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAS316/DG/B3,135
BAS316/DG/B3,135
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA TO236
BZX84-C8V2,235
BZX84-C8V2,235
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
BZX84J-B8V2,115
BZX84J-B8V2,115
Nexperia USA Inc.
DIODE ZENER 8.2V 550MW SOD323F
BZX84-C8V2/DG/B4R
BZX84-C8V2/DG/B4R
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
BC847QAPNZ
BC847QAPNZ
Nexperia USA Inc.
TRANS NPN/PNP 45V 0.1A 6DFN
PBSS4041SPN,115
PBSS4041SPN,115
Nexperia USA Inc.
TRANS NPN/PNP 60V 6.7A/5.9A 8SO
PBSS5350X,135
PBSS5350X,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
BC859CW/ZLF
BC859CW/ZLF
Nexperia USA Inc.
TRANS SOT323
BSH111,215
BSH111,215
Nexperia USA Inc.
MOSFET N-CH 55V 335MA TO236AB
74HC3G14DP,125
74HC3G14DP,125
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3IN 8TSSOP
74HC11DB,112
74HC11DB,112
Nexperia USA Inc.
NEXPERIA 74HC11D - AND GATE, HC/
74HCT373PW-Q100,11
74HCT373PW-Q100,11
Nexperia USA Inc.
IC TRANSP LATCH OCT D 20TSSOP