PMZ600UNEZ
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Nexperia USA Inc. PMZ600UNEZ

Manufacturer No:
PMZ600UNEZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 600MA DFN1006-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZ600UNEZ is a high-performance N-Channel power MOSFET produced by Nexperia USA Inc. This device is designed to offer low on-resistance and high efficiency, making it suitable for a variety of power management applications. The MOSFET is housed in a compact DFN1006-3 package, which is ideal for space-constrained designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
ID (Continuous Drain Current)600 mA
PD (Total Power Dissipation at Ta)360 mW
PD (Total Power Dissipation at Tc)2.7 W
RDS(on) (On-Resistance)0.47 ohm
PackageDFN1006-3
Mounting TypeSurface Mount

Key Features

  • Low on-resistance (RDS(on)) of 0.47 ohm for high efficiency.
  • Compact DFN1006-3 package for space-saving designs.
  • High continuous drain current of 600 mA.
  • Total power dissipation of 360 mW at ambient temperature and 2.7 W at case temperature.
  • Standard-level gate drive for ease of use with existing gate drive circuits.

Applications

The PMZ600UNEZ is suitable for various power management applications, including but not limited to:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power amplifiers and audio systems.
  • Battery management systems.
  • General-purpose power switching.

Q & A

  1. What is the maximum drain-source voltage of the PMZ600UNEZ?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the continuous drain current rating of the PMZ600UNEZ?
    The continuous drain current (ID) is 600 mA.
  3. What is the on-resistance (RDS(on)) of the PMZ600UNEZ?
    The on-resistance (RDS(on)) is 0.47 ohm.
  4. In what package is the PMZ600UNEZ available?
    The PMZ600UNEZ is available in a DFN1006-3 package.
  5. What is the total power dissipation at ambient temperature for the PMZ600UNEZ?
    The total power dissipation at ambient temperature (PD) is 360 mW.
  6. What is the total power dissipation at case temperature for the PMZ600UNEZ?
    The total power dissipation at case temperature (PD) is 2.7 W.
  7. Is the PMZ600UNEZ suitable for high-frequency applications?
    Yes, the PMZ600UNEZ is designed for high-efficiency applications, including those requiring high-frequency switching.
  8. Can the PMZ600UNEZ be used in motor control systems?
    Yes, the PMZ600UNEZ can be used in motor control and drive systems due to its high current handling and low on-resistance.
  9. What type of gate drive does the PMZ600UNEZ require?
    The PMZ600UNEZ requires a standard-level gate drive, making it compatible with existing gate drive circuits.
  10. Where can I find detailed specifications for the PMZ600UNEZ?
    Detailed specifications can be found in the datasheet available from Nexperia's official website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:21.3 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883
Package / Case:SC-101, SOT-883
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