STV270N4F3
  • Share:

STMicroelectronics STV270N4F3

Manufacturer No:
STV270N4F3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 270A 10POWERSO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STV270N4F3 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ III technology. This device is designed to minimize on-state resistance, providing superior switching performances and reduced conduction losses. It is packaged in a PowerSO-10 exposed bottom pad, which offers low profile and very low parasitic inductance, making it ideal for high-power switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 270 A
Continuous Drain Current (ID) at TC = 100°C 220 A
Pulsed Drain Current (IDM) 1080 A
Total Dissipation at TC = 25°C 300 W
Static Drain-Source On Resistance (RDS(on)) at VGS = 10V, ID = 80A 1.25 - 1.5 mΩ
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Operating Junction Temperature (Tj) -55 to 175 °C
Package PowerSO-10 Exposed Bottom Pad

Key Features

  • Advanced STripFET™ III technology for minimized on-state resistance and superior switching performance.
  • Low profile and very low parasitic inductance due to the PowerSO-10 package.
  • High continuous drain current of up to 270 A at TC = 25°C.
  • Low static drain-source on resistance (RDS(on)) of 1.25 - 1.5 mΩ.
  • Wide operating junction temperature range from -55°C to 175°C.
  • High total dissipation capability of up to 300 W at TC = 25°C.

Applications

The STV270N4F3 is suitable for various high-power switching applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems requiring high reliability and performance.
  • Industrial power management and control systems.

Q & A

  1. What is the maximum drain-source voltage of the STV270N4F3?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the continuous drain current at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 270 A.

  3. What is the typical static drain-source on resistance (RDS(on))?

    The typical static drain-source on resistance (RDS(on)) is 1.25 mΩ at VGS = 10 V and ID = 80 A.

  4. What is the operating junction temperature range?

    The operating junction temperature (Tj) range is from -55°C to 175°C.

  5. What package type is used for the STV270N4F3?

    The STV270N4F3 is packaged in a PowerSO-10 exposed bottom pad.

  6. What are the typical applications for the STV270N4F3?

    Typical applications include power supplies, DC-DC converters, motor control, automotive systems, and industrial power management.

  7. What is the maximum gate-source voltage?

    The maximum gate-source voltage (VGS) is ±20 V.

  8. What is the total dissipation at TC = 25°C?

    The total dissipation at TC = 25°C is 300 W.

  9. Is the STV270N4F3 RoHS compliant?

    Yes, the STV270N4F3 is RoHS compliant and comes in an ECOPACK® package.

  10. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) range is from 2 to 4 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:270A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:10-PowerSO
Package / Case:PowerSO-10 Exposed Bottom Pad
0 Remaining View Similar

In Stock

$6.37
61

Please send RFQ , we will respond immediately.

Related Product By Categories

CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
STM32L151VCH6
STM32L151VCH6
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100UFBGA
STM32L071RZT6
STM32L071RZT6
STMicroelectronics
IC MCU 32BIT 192KB FLASH 64LQFP
STM32L4A6QGI6P
STM32L4A6QGI6P
STMicroelectronics
IC MCU 32BIT 1MB FLASH 132UFBGA
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
TDA7564B
TDA7564B
STMicroelectronics
IC AMP AB QUAD 75W 25FLEXIWATT
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA