STV270N4F3
  • Share:

STMicroelectronics STV270N4F3

Manufacturer No:
STV270N4F3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 270A 10POWERSO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STV270N4F3 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ III technology. This device is designed to minimize on-state resistance, providing superior switching performances and reduced conduction losses. It is packaged in a PowerSO-10 exposed bottom pad, which offers low profile and very low parasitic inductance, making it ideal for high-power switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 270 A
Continuous Drain Current (ID) at TC = 100°C 220 A
Pulsed Drain Current (IDM) 1080 A
Total Dissipation at TC = 25°C 300 W
Static Drain-Source On Resistance (RDS(on)) at VGS = 10V, ID = 80A 1.25 - 1.5 mΩ
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Operating Junction Temperature (Tj) -55 to 175 °C
Package PowerSO-10 Exposed Bottom Pad

Key Features

  • Advanced STripFET™ III technology for minimized on-state resistance and superior switching performance.
  • Low profile and very low parasitic inductance due to the PowerSO-10 package.
  • High continuous drain current of up to 270 A at TC = 25°C.
  • Low static drain-source on resistance (RDS(on)) of 1.25 - 1.5 mΩ.
  • Wide operating junction temperature range from -55°C to 175°C.
  • High total dissipation capability of up to 300 W at TC = 25°C.

Applications

The STV270N4F3 is suitable for various high-power switching applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems requiring high reliability and performance.
  • Industrial power management and control systems.

Q & A

  1. What is the maximum drain-source voltage of the STV270N4F3?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the continuous drain current at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 270 A.

  3. What is the typical static drain-source on resistance (RDS(on))?

    The typical static drain-source on resistance (RDS(on)) is 1.25 mΩ at VGS = 10 V and ID = 80 A.

  4. What is the operating junction temperature range?

    The operating junction temperature (Tj) range is from -55°C to 175°C.

  5. What package type is used for the STV270N4F3?

    The STV270N4F3 is packaged in a PowerSO-10 exposed bottom pad.

  6. What are the typical applications for the STV270N4F3?

    Typical applications include power supplies, DC-DC converters, motor control, automotive systems, and industrial power management.

  7. What is the maximum gate-source voltage?

    The maximum gate-source voltage (VGS) is ±20 V.

  8. What is the total dissipation at TC = 25°C?

    The total dissipation at TC = 25°C is 300 W.

  9. Is the STV270N4F3 RoHS compliant?

    Yes, the STV270N4F3 is RoHS compliant and comes in an ECOPACK® package.

  10. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) range is from 2 to 4 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:270A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:10-PowerSO
Package / Case:PowerSO-10 Exposed Bottom Pad
0 Remaining View Similar

In Stock

$6.37
61

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

STM32F745VGH6
STM32F745VGH6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100TFBGA
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
STM32L4A6QGI6P
STM32L4A6QGI6P
STMicroelectronics
IC MCU 32BIT 1MB FLASH 132UFBGA
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
LM258PT
LM258PT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8TSSOP
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
M27C2001-10F1
M27C2001-10F1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32CDIP
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
AST1S31HF
AST1S31HF
STMicroelectronics
IC REG BUCK ADJ 3A 8VFDFPN
L78M05CDT
L78M05CDT
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA