STV270N4F3
  • Share:

STMicroelectronics STV270N4F3

Manufacturer No:
STV270N4F3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 270A 10POWERSO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STV270N4F3 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ III technology. This device is designed to minimize on-state resistance, providing superior switching performances and reduced conduction losses. It is packaged in a PowerSO-10 exposed bottom pad, which offers low profile and very low parasitic inductance, making it ideal for high-power switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 270 A
Continuous Drain Current (ID) at TC = 100°C 220 A
Pulsed Drain Current (IDM) 1080 A
Total Dissipation at TC = 25°C 300 W
Static Drain-Source On Resistance (RDS(on)) at VGS = 10V, ID = 80A 1.25 - 1.5 mΩ
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Operating Junction Temperature (Tj) -55 to 175 °C
Package PowerSO-10 Exposed Bottom Pad

Key Features

  • Advanced STripFET™ III technology for minimized on-state resistance and superior switching performance.
  • Low profile and very low parasitic inductance due to the PowerSO-10 package.
  • High continuous drain current of up to 270 A at TC = 25°C.
  • Low static drain-source on resistance (RDS(on)) of 1.25 - 1.5 mΩ.
  • Wide operating junction temperature range from -55°C to 175°C.
  • High total dissipation capability of up to 300 W at TC = 25°C.

Applications

The STV270N4F3 is suitable for various high-power switching applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems requiring high reliability and performance.
  • Industrial power management and control systems.

Q & A

  1. What is the maximum drain-source voltage of the STV270N4F3?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the continuous drain current at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 270 A.

  3. What is the typical static drain-source on resistance (RDS(on))?

    The typical static drain-source on resistance (RDS(on)) is 1.25 mΩ at VGS = 10 V and ID = 80 A.

  4. What is the operating junction temperature range?

    The operating junction temperature (Tj) range is from -55°C to 175°C.

  5. What package type is used for the STV270N4F3?

    The STV270N4F3 is packaged in a PowerSO-10 exposed bottom pad.

  6. What are the typical applications for the STV270N4F3?

    Typical applications include power supplies, DC-DC converters, motor control, automotive systems, and industrial power management.

  7. What is the maximum gate-source voltage?

    The maximum gate-source voltage (VGS) is ±20 V.

  8. What is the total dissipation at TC = 25°C?

    The total dissipation at TC = 25°C is 300 W.

  9. Is the STV270N4F3 RoHS compliant?

    Yes, the STV270N4F3 is RoHS compliant and comes in an ECOPACK® package.

  10. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) range is from 2 to 4 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:270A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:10-PowerSO
Package / Case:PowerSO-10 Exposed Bottom Pad
0 Remaining View Similar

In Stock

$6.37
61

Please send RFQ , we will respond immediately.

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

X0202MN 5BA4
X0202MN 5BA4
STMicroelectronics
SCR 600V 1.25A SOT223
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STHVDAC-303F6
STHVDAC-303F6
STMicroelectronics
IC DAC 8BIT 16FLIPCHIP
STM32F334K8T6TR
STM32F334K8T6TR
STMicroelectronics
IC MCU 32BIT 64KB FLASH 32LQFP
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24