Overview
The FDMC86160ET100 is an N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench process with Shielded Gate technology. This device is optimized for ultra-low on-state resistance (RDS(on)), making it highly suitable for applications requiring high performance in compact spaces, such as high-performance VRM (Voltage Regulator Modules), POL (Point of Load), and orring functions.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 100 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 43 | A |
| Continuous Drain Current (ID) at TC = 100°C | 31 | A |
| Pulsed Drain Current (ID) | 204 | A |
| Power Dissipation (PD) at TC = 25°C | 65 | W |
| Power Dissipation (PD) at TA = 25°C | 2.8 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +175 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 2.3 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 53 | °C/W |
| Static Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 9 A | 14 mΩ | mΩ |
| Static Drain to Source On Resistance (rDS(on)) at VGS = 6 V, ID = 7 A | 23 mΩ | mΩ |
Key Features
- Shielded Gate MOSFET Technology
- Extended TJ Rating to 175°C
- High Performance Technology for Extremely Low RDS(on)
- Lead-free and RoHS Compliant
- Ultra-low RDS(on) for high-performance applications in small spaces
Applications
- Bridge Topologies
- Synchronous Rectifier
- High-performance VRM (Voltage Regulator Modules)
- POL (Point of Load)
- Orring functions
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC86160ET100? The maximum VDS is 100 V.
- What is the maximum continuous drain current (ID) at TC = 25°C? The maximum ID at TC = 25°C is 43 A.
- What is the thermal resistance from junction to case (RθJC) of this MOSFET? The RθJC is 2.3 °C/W.
- Is the FDMC86160ET100 RoHS compliant? Yes, it is lead-free and RoHS compliant.
- What are the typical applications of the FDMC86160ET100? Typical applications include bridge topologies, synchronous rectifier, high-performance VRM, POL, and orring functions.
- What is the maximum gate to source voltage (VGS) rating? The maximum VGS rating is ±20 V.
- What is the static drain to source on resistance (rDS(on)) at VGS = 10 V and ID = 9 A? The rDS(on) is 14 mΩ at VGS = 10 V and ID = 9 A.
- What is the operating and storage junction temperature range (TJ, TSTG)? The range is -55 to +175 °C.
- What is the power dissipation (PD) at TA = 25°C? The power dissipation at TA = 25°C is 2.8 W.
- What is the package type of the FDMC86160ET100? The package type is WDFN8 3.3x3.3, 0.65P (Power 33).
