FDD86567-F085
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onsemi FDD86567-F085

Manufacturer No:
FDD86567-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 100A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD86567-F085 is a high-performance N-Channel PowerTrench MOSFET produced by onsemi. This component is designed to offer high power efficiency and reliability, making it suitable for a wide range of applications. It features a 60 V drain-to-source voltage rating, a continuous drain current of 100 A, and a maximum junction temperature of 227 W. The MOSFET is packaged in a surface mount TO-252AA case, which is compact and suitable for modern electronic designs.

Key Specifications

ParameterValue
Drain-to-Source Voltage (Vds)60 V
Continuous Drain Current (Id)100 A
Maximum Junction Temperature (Tj)227 W
On-Resistance (Rds(on))2.6 mΩ at Vgs = 10 V
Package TypeTO-252AA

Key Features

  • High power efficiency with low on-resistance (Rds(on)) of 2.6 mΩ at Vgs = 10 V.
  • High current handling capability with a continuous drain current of 100 A.
  • Compact TO-252AA surface mount package for space-efficient designs.
  • High reliability and durability, suitable for demanding applications.

Applications

  • Engine management systems
  • Electric power-assisted steering (EPAS)
  • Motor drives
  • Traction inverters
  • Chargers and DC-DC converters
  • PTC heaters and other high-power systems.

Q & A

  1. What is the maximum drain-to-source voltage of the FDD86567-F085 MOSFET?
    The maximum drain-to-source voltage is 60 V.
  2. What is the continuous drain current rating of the FDD86567-F085?
    The continuous drain current rating is 100 A.
  3. What is the typical on-resistance (Rds(on)) of the FDD86567-F085?
    The typical on-resistance is 2.6 mΩ at Vgs = 10 V.
  4. In what package is the FDD86567-F085 available?
    The FDD86567-F085 is available in a TO-252AA surface mount package.
  5. What are some common applications of the FDD86567-F085 MOSFET?
    Common applications include engine management, EPAS, motor drives, traction inverters, chargers, DC-DC converters, and PTC heaters.
  6. What is the maximum junction temperature of the FDD86567-F085?
    The maximum junction temperature is 227 W.
  7. Why is the FDD86567-F085 considered power-efficient?
    The FDD86567-F085 is considered power-efficient due to its low on-resistance and high current handling capability.
  8. Is the FDD86567-F085 suitable for high-power systems?
    Yes, the FDD86567-F085 is designed for high-power applications and is known for its reliability and durability.
  9. Where can I find detailed specifications for the FDD86567-F085?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser Electronics.
  10. What are the benefits of using the TO-252AA package for the FDD86567-F085?
    The TO-252AA package is compact and suitable for modern electronic designs, offering space efficiency and ease of mounting.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4950 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):227W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD86567-F085 FDD86569-F085 FDD86367-F085
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 90A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 80A, 10V 5.7mOhm @ 80A, 10V 4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 52 nC @ 10 V 88 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4950 pF @ 30 V 2520 pF @ 30 V 4840 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 227W (Tj) 150W (Tj) 227W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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