Overview
The FDD86367-F085 is a high-performance N-Channel MOSFET produced by onsemi. This device is part of the POWERTRENCH family and is designed for high-power applications. It features a drain-to-source voltage (VDSS) of 80 V and a continuous drain current (ID) of 100 A. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring its reliability and suitability for automotive and other demanding environments. It is also Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly.
Key Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDSS - Drain-to-Source Voltage | ID = 250 μA, VGS = 0 V | - | - | 80 | V |
| VGS - Gate-to-Source Voltage | - | - | - | ±20 | V |
| ID - Continuous Drain Current | VGS = 10 V, TC = 25°C | - | - | 100 | A |
| PD - Power Dissipation | TC = 25°C | - | - | 227 | W |
| RDS(on) - Drain to Source On Resistance | ID = 80 A, VGS = 10 V, TJ = 25°C | - | 3.3 | 4.2 | mΩ |
| TJ, TSTG - Operating and Storage Temperature | - | -55 | - | 175 | °C |
| RθJC - Thermal Resistance, Junction to Case | - | - | - | 0.66 | °C/W |
| RθJA - Maximum Thermal Resistance, Junction to Ambient | - | - | - | 52 | °C/W |
Key Features
- Typical RDS(on) = 3.3 mΩ at VGS = 10 V, ID = 80 A
- Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 A
- UIS Capability
- AEC-Q101 Qualified and PPAP Capable
- Pb-free, Halogen-free/BFR-free, and RoHS Compliant
Applications
- Automotive Engine Control
- PowerTrain Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator
- Primary Switch for 12 V Systems
Q & A
- What is the maximum drain-to-source voltage of the FDD86367-F085 MOSFET?
The maximum drain-to-source voltage (VDSS) is 80 V.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current (ID) is 100 A at VGS = 10 V and TC = 25°C.
- Is the FDD86367-F085 MOSFET environmentally friendly?
Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What are the typical on-resistance and total gate charge of this MOSFET?
The typical on-resistance (RDS(on)) is 3.3 mΩ at VGS = 10 V, ID = 80 A, and the typical total gate charge (Qg(tot)) is 68 nC at VGS = 10 V, ID = 80 A.
- What are some common applications for the FDD86367-F085 MOSFET?
Common applications include automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator, and primary switch for 12 V systems.
- Is the FDD86367-F085 AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the thermal resistance from junction to case (RθJC) of this MOSFET?
The thermal resistance from junction to case (RθJC) is 0.66 °C/W.
- What is the maximum thermal resistance from junction to ambient (RθJA)?
The maximum thermal resistance from junction to ambient (RθJA) is 52 °C/W.
- What is the operating and storage temperature range for the FDD86367-F085 MOSFET?
The operating and storage temperature range is -55°C to +175°C.
- Does the FDD86367-F085 MOSFET have any special handling requirements?
Yes, it should be handled according to the specified maximum ratings and handling guidelines to avoid damage.
