FDD86369-F085
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onsemi FDD86369-F085

Manufacturer No:
FDD86369-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 90A DPAK
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The FDD86369-F085 is an N-Channel PowerTrench MOSFET manufactured by onsemi. This device is designed to provide high performance and reliability in various power management applications. The PowerTrench technology enhances the device's electrical characteristics, such as low on-resistance and high current handling capability, making it suitable for demanding environments.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)80 V
Maximum Operating Temperature+175°C
Power Dissipation (Pd)150 W
Channel ModeEnhancement
QualificationAEC-Q101

Key Features

  • Low on-resistance (Rds(on)) for efficient power handling
  • High current capability, suitable for high-power applications
  • Enhancement mode operation for better control over the channel
  • AEC-Q101 qualified, ensuring reliability in automotive and other harsh environments
  • PowerTrench technology for improved electrical characteristics

Applications

The FDD86369-F085 MOSFET is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive power management and control systems.
  • Power supplies: Its high current handling and low on-resistance make it ideal for power supply designs.
  • Motor control: It can be used in motor control circuits due to its high current and voltage ratings.
  • Industrial power management: It is suitable for various industrial power management applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the FDD86369-F085?
    The maximum drain to source voltage (Vdss) is 80 V.
  2. What is the maximum operating temperature of the FDD86369-F085?
    The maximum operating temperature is +175°C.
  3. What is the power dissipation (Pd) of the FDD86369-F085?
    The power dissipation (Pd) is 150 W.
  4. What is the channel mode of the FDD86369-F085?
    The channel mode is enhancement.
  5. Is the FDD86369-F085 AEC-Q101 qualified?
    Yes, the FDD86369-F085 is AEC-Q101 qualified.
  6. What technology is used in the FDD86369-F085?
    The FDD86369-F085 uses PowerTrench technology.
  7. What are some common applications of the FDD86369-F085?
    Common applications include automotive systems, power supplies, motor control, and industrial power management.
  8. What is the significance of AEC-Q101 qualification?
    AEC-Q101 qualification ensures the device meets the stringent requirements for use in automotive and other harsh environments.
  9. How does the PowerTrench technology benefit the FDD86369-F085?
    The PowerTrench technology enhances the electrical characteristics, such as low on-resistance and high current handling capability.
  10. Where can I find detailed specifications for the FDD86369-F085?
    Detailed specifications can be found in the datasheet available on the onsemi website, Digi-Key, Mouser Electronics, and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2530 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):150W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD86369-F085 FDD86569-F085 FDD86367-F085
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 60 V 80 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 90A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 80A, 10V 5.7mOhm @ 80A, 10V 4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 52 nC @ 10 V 88 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2530 pF @ 40 V 2520 pF @ 30 V 4840 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 150W (Tj) 150W (Tj) 227W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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