FDD86369-F085
  • Share:

onsemi FDD86369-F085

Manufacturer No:
FDD86369-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 90A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD86369-F085 is an N-Channel PowerTrench MOSFET manufactured by onsemi. This device is designed to provide high performance and reliability in various power management applications. The PowerTrench technology enhances the device's electrical characteristics, such as low on-resistance and high current handling capability, making it suitable for demanding environments.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)80 V
Maximum Operating Temperature+175°C
Power Dissipation (Pd)150 W
Channel ModeEnhancement
QualificationAEC-Q101

Key Features

  • Low on-resistance (Rds(on)) for efficient power handling
  • High current capability, suitable for high-power applications
  • Enhancement mode operation for better control over the channel
  • AEC-Q101 qualified, ensuring reliability in automotive and other harsh environments
  • PowerTrench technology for improved electrical characteristics

Applications

The FDD86369-F085 MOSFET is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive power management and control systems.
  • Power supplies: Its high current handling and low on-resistance make it ideal for power supply designs.
  • Motor control: It can be used in motor control circuits due to its high current and voltage ratings.
  • Industrial power management: It is suitable for various industrial power management applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the FDD86369-F085?
    The maximum drain to source voltage (Vdss) is 80 V.
  2. What is the maximum operating temperature of the FDD86369-F085?
    The maximum operating temperature is +175°C.
  3. What is the power dissipation (Pd) of the FDD86369-F085?
    The power dissipation (Pd) is 150 W.
  4. What is the channel mode of the FDD86369-F085?
    The channel mode is enhancement.
  5. Is the FDD86369-F085 AEC-Q101 qualified?
    Yes, the FDD86369-F085 is AEC-Q101 qualified.
  6. What technology is used in the FDD86369-F085?
    The FDD86369-F085 uses PowerTrench technology.
  7. What are some common applications of the FDD86369-F085?
    Common applications include automotive systems, power supplies, motor control, and industrial power management.
  8. What is the significance of AEC-Q101 qualification?
    AEC-Q101 qualification ensures the device meets the stringent requirements for use in automotive and other harsh environments.
  9. How does the PowerTrench technology benefit the FDD86369-F085?
    The PowerTrench technology enhances the electrical characteristics, such as low on-resistance and high current handling capability.
  10. Where can I find detailed specifications for the FDD86369-F085?
    Detailed specifications can be found in the datasheet available on the onsemi website, Digi-Key, Mouser Electronics, and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2530 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):150W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.31
379

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDD86369-F085 FDD86569-F085 FDD86367-F085
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 60 V 80 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 90A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 80A, 10V 5.7mOhm @ 80A, 10V 4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 52 nC @ 10 V 88 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2530 pF @ 40 V 2520 pF @ 30 V 4840 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 150W (Tj) 150W (Tj) 227W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5