Overview
The FDD86580-F085 is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-power applications and features a low on-resistance, making it suitable for various automotive and industrial uses. However, it is important to note that this device is not recommended for new designs and users should contact their onsemi representative for further information.
Key Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| VDSS (Drain-to-Source Voltage) | - | - | 60 | V | |
| VGS (Gate-to-Source Voltage) | - | - | ±20 | V | |
| ID (Drain Current - Continuous) | VGS = 10V, TC = 25°C | - | 50 | A | |
| Pulsed Drain Current | TC = 25°C | - | - | See Figure 4 | |
| EAS (Single Pulse Avalanche Energy) | Starting TJ = 25°C, L = 30μH, IAS = 40A, VDD = 60V | - | - | 24 mJ | |
| PD (Power Dissipation) | - | - | 75 W | - | |
| TJ, TSTG (Operating and Storage Temperature) | - | -55 to +175 | - | °C | |
| RθJC (Thermal Resistance, Junction to Case) | - | - | 2.0 | °C/W | |
| RθJA (Maximum Thermal Resistance, Junction to Ambient) | - | - | 52 | °C/W | |
| RDS(on) (Drain to Source On Resistance) | ID = 50A, VGS = 10V, TJ = 25°C | - | 7.8 | 10 mΩ |
Key Features
- Typical RDS(on) = 7.8 mΩ at VGS = 10V, ID = 50 A
- Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A
- UIS Capability
- RoHS Compliant
- Qualified to AEC Q101
Applications
- Automotive Engine Control
- PowerTrain Management
- Solenoid and Motor Drivers
- Electronic Steering
- Integrated Starter/Alternator
- Distributed Power Architectures and VRM
- Primary Switch for 12V Systems
Q & A
- What is the maximum drain-to-source voltage of the FDD86580-F085 MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 V. - What is the typical on-resistance of the FDD86580-F085 at VGS = 10V and ID = 50A?
The typical on-resistance (RDS(on)) is 7.8 mΩ. - Is the FDD86580-F085 RoHS compliant?
Yes, the FDD86580-F085 is RoHS compliant. - What are the operating and storage temperature ranges for the FDD86580-F085?
The operating and storage temperature ranges are -55°C to +175°C. - What is the maximum power dissipation of the FDD86580-F085?
The maximum power dissipation (PD) is 75 W. - What are some typical applications of the FDD86580-F085?
Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, electronic steering, integrated starter/alternator, and primary switch for 12V systems. - Is the FDD86580-F085 recommended for new designs?
No, the FDD86580-F085 is not recommended for new designs. Users should contact their onsemi representative for further information. - What is the thermal resistance from junction to case (RθJC) for the FDD86580-F085?
The thermal resistance from junction to case (RθJC) is 2.0 °C/W. - What is the maximum thermal resistance from junction to ambient (RθJA) for the FDD86580-F085?
The maximum thermal resistance from junction to ambient (RθJA) is 52 °C/W. - What is the gate-to-source threshold voltage (VGS(th)) of the FDD86580-F085?
The gate-to-source threshold voltage (VGS(th)) ranges from 2.0 V to 4.2 V.
