FDD86569-F085
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onsemi FDD86569-F085

Manufacturer No:
FDD86569-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 90A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD86580-F085 is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-power applications and features a low on-resistance, making it suitable for various automotive and industrial uses. However, it is important to note that this device is not recommended for new designs and users should contact their onsemi representative for further information.

Key Specifications

ParameterTest ConditionsMin.Typ.Max.Units
VDSS (Drain-to-Source Voltage)--60V
VGS (Gate-to-Source Voltage)--±20V
ID (Drain Current - Continuous)VGS = 10V, TC = 25°C-50A
Pulsed Drain CurrentTC = 25°C--See Figure 4
EAS (Single Pulse Avalanche Energy)Starting TJ = 25°C, L = 30μH, IAS = 40A, VDD = 60V--24 mJ
PD (Power Dissipation)--75 W-
TJ, TSTG (Operating and Storage Temperature)--55 to +175-°C
RθJC (Thermal Resistance, Junction to Case)--2.0°C/W
RθJA (Maximum Thermal Resistance, Junction to Ambient)--52°C/W
RDS(on) (Drain to Source On Resistance)ID = 50A, VGS = 10V, TJ = 25°C-7.810 mΩ

Key Features

  • Typical RDS(on) = 7.8 mΩ at VGS = 10V, ID = 50 A
  • Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A
  • UIS Capability
  • RoHS Compliant
  • Qualified to AEC Q101

Applications

  • Automotive Engine Control
  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Electronic Steering
  • Integrated Starter/Alternator
  • Distributed Power Architectures and VRM
  • Primary Switch for 12V Systems

Q & A

  1. What is the maximum drain-to-source voltage of the FDD86580-F085 MOSFET?
    The maximum drain-to-source voltage (VDSS) is 60 V.
  2. What is the typical on-resistance of the FDD86580-F085 at VGS = 10V and ID = 50A?
    The typical on-resistance (RDS(on)) is 7.8 mΩ.
  3. Is the FDD86580-F085 RoHS compliant?
    Yes, the FDD86580-F085 is RoHS compliant.
  4. What are the operating and storage temperature ranges for the FDD86580-F085?
    The operating and storage temperature ranges are -55°C to +175°C.
  5. What is the maximum power dissipation of the FDD86580-F085?
    The maximum power dissipation (PD) is 75 W.
  6. What are some typical applications of the FDD86580-F085?
    Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, electronic steering, integrated starter/alternator, and primary switch for 12V systems.
  7. Is the FDD86580-F085 recommended for new designs?
    No, the FDD86580-F085 is not recommended for new designs. Users should contact their onsemi representative for further information.
  8. What is the thermal resistance from junction to case (RθJC) for the FDD86580-F085?
    The thermal resistance from junction to case (RθJC) is 2.0 °C/W.
  9. What is the maximum thermal resistance from junction to ambient (RθJA) for the FDD86580-F085?
    The maximum thermal resistance from junction to ambient (RθJA) is 52 °C/W.
  10. What is the gate-to-source threshold voltage (VGS(th)) of the FDD86580-F085?
    The gate-to-source threshold voltage (VGS(th)) ranges from 2.0 V to 4.2 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2520 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):150W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD86569-F085 FDD86369-F085 FDD86567-F085
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 90A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 80A, 10V 7.9mOhm @ 80A, 10V 3.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V 54 nC @ 10 V 82 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2520 pF @ 30 V 2530 pF @ 40 V 4950 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 150W (Tj) 150W (Tj) 227W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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