NVHL025N65S3
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onsemi NVHL025N65S3

Manufacturer No:
NVHL025N65S3
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 650V 75A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVHL025N65S3 is a high-voltage, N-Channel MOSFET from onsemi, part of their SuperFET III family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. The NVHL025N65S3 is particularly suited for applications requiring high efficiency and reliability.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 650 V
Gate to Source Voltage (VGSS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 25 A A
Continuous Drain Current (ID) at TC = 100°C 16 A A
Pulsed Drain Current (IDM) 55 A A
Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 12.5 A, TJ = 25°C 61 mΩ
Total Gate Charge (Qg) 82 nC nC
Effective Output Capacitance (Coss(eff.)) 724 pF pF
Operating and Storage Temperature Range -55 to +150 °C °C

Key Features

  • AEC-Q101 Qualified for automotive applications.
  • Ultra-low gate charge (Typ. Qg = 82 nC) for improved switching performance.
  • Low effective output capacitance (Typ. Coss(eff.) = 724 pF) to reduce switching losses.
  • 100% avalanche tested to ensure robustness.
  • Pb-free and RoHS compliant.
  • Maximum junction temperature of 150°C.
  • Low on-resistance (Typ. RDS(on) = 61 mΩ) for reduced conduction losses.

Applications

  • Automotive PHEV-BEV DC-DC converters.
  • Automotive onboard chargers for PHEV-BEV.

Q & A

  1. What is the maximum drain to source voltage of the NVHL025N65S3?

    The maximum drain to source voltage (VDSS) is 650 V.

  2. What is the continuous drain current at 25°C and 100°C?

    The continuous drain current is 25 A at TC = 25°C and 16 A at TC = 100°C.

  3. What is the typical on-resistance of the NVHL025N65S3?

    The typical on-resistance (RDS(on)) is 61 mΩ at VGS = 10 V, ID = 12.5 A, and TJ = 25°C.

  4. Is the NVHL025N65S3 AEC-Q101 qualified?
  5. What is the maximum junction temperature of the NVHL025N65S3?

    The maximum junction temperature is 150°C.

  6. What is the typical total gate charge of the NVHL025N65S3?

    The typical total gate charge (Qg) is 82 nC.

  7. Is the NVHL025N65S3 Pb-free and RoHS compliant?
  8. What are the typical applications of the NVHL025N65S3?

    The NVHL025N65S3 is typically used in automotive PHEV-BEV DC-DC converters and onboard chargers.

  9. What is the effective output capacitance of the NVHL025N65S3?

    The effective output capacitance (Coss(eff.)) is typically 724 pF.

  10. What is the thermal resistance from junction to case for the NVHL025N65S3?

    The thermal resistance from junction to case (RθJC) is 0.37 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:25mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:236 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:7330 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):595W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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$23.70
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