FDBL0150N80
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onsemi FDBL0150N80

Manufacturer No:
FDBL0150N80
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 300A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL0150N80 is a high-performance N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed to handle high current and voltage requirements, making it suitable for a variety of industrial and power management applications. With its robust specifications and features, the FDBL0150N80 is an excellent choice for systems that demand reliability and efficiency.

Key Specifications

Parameter Value Units
Current (ID) 300 A (Tc) A
Drain to Source Voltage (Vdss) 80 V V
Drive Voltage (Max Rds On, Min Rds On) 10 V V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 188 nC @ 10 V nC
Input Capacitance (Ciss) (Max) @ Vds 12800 pF @ 25 V pF
Mounting Type Surface Mount
Operating Temperature -55°C ~ 175°C (TJ) °C
Package 8-PowerSFN (HPSOF-8)
Power Dissipation (Max) 429 W (Tj) W
Rds On (Max) @ Id, Vgs 1.4 mΩ @ 80 A, 10 V mΩ
Vgs (Max) ±20 V V
Vgs(th) (Max) @ Id 4 V @ 250 µA V

Key Features

  • High Current Capability: Up to 300 A continuous drain current.
  • Low On-Resistance: Typical RDS(on) of 1.1 mΩ at VGS = 10 V, ID = 80 A.
  • High Voltage Rating: Drain to source voltage (Vdss) of 80 V.
  • UIS Capability: Unclamped Inductive Switching capability.
  • RoHS Compliant: Compliant with the Restriction of Hazardous Substances directive.
  • Gate Charge: Typical Qg(tot) of 172 nC at VGS = 10 V, ID = 80 A.
  • Operating Temperature Range: From -55°C to 175°C.

Applications

  • Industrial Motor Drive: Suitable for high-power motor control systems.
  • Industrial Power Supply: Used in high-current power supply units.
  • Industrial Automation: Ideal for automation systems requiring high reliability.
  • Battery Operated Tools: Enhances performance in battery-powered tools.
  • Battery Protection: Provides protection in battery management systems.
  • Solar Inverters: Used in solar power conversion systems.
  • UPS and Energy Inverters: Suitable for uninterruptible power supplies and energy inverters.
  • Energy Storage: Used in energy storage systems.
  • Load Switch: Can be used as a high-current load switch.

Q & A

  1. What is the maximum continuous drain current of the FDBL0150N80 MOSFET?

    The maximum continuous drain current is 300 A at VGS = 10 V.

  2. What is the drain to source voltage rating of the FDBL0150N80?

    The drain to source voltage (Vdss) rating is 80 V.

  3. What is the typical on-resistance of the FDBL0150N80?

    The typical RDS(on) is 1.1 mΩ at VGS = 10 V, ID = 80 A.

  4. Is the FDBL0150N80 RoHS compliant?

    Yes, the FDBL0150N80 is RoHS compliant.

  5. What is the operating temperature range of the FDBL0150N80?

    The operating temperature range is from -55°C to 175°C.

  6. What are the typical applications of the FDBL0150N80 MOSFET?

    It is used in industrial motor drives, industrial power supplies, industrial automation, battery-operated tools, battery protection, solar inverters, UPS and energy inverters, energy storage, and as a load switch.

  7. What is the maximum gate to source voltage of the FDBL0150N80?

    The maximum gate to source voltage (Vgs) is ±20 V.

  8. What is the gate charge of the FDBL0150N80?

    The typical gate charge (Qg) is 172 nC at VGS = 10 V, ID = 80 A.

  9. What is the maximum power dissipation of the FDBL0150N80?

    The maximum power dissipation is 429 W (Tj).

  10. What is the package type of the FDBL0150N80?

    The package type is 8-PowerSFN (HPSOF-8).

  11. Is the FDBL0150N80 suitable for high-frequency switching applications?

    Yes, with its low on-resistance and high current capability, it is suitable for high-frequency switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:188 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):429W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
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