STB36NM60ND
  • Share:

STMicroelectronics STB36NM60ND

Manufacturer No:
STB36NM60ND
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 29A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB36NM60ND is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. It is part of the FDmesh™ II family, utilizing the second generation of MDmesh™ technology. This MOSFET is designed for high-performance applications, particularly in the automotive sector, due to its robust characteristics and reliability.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Current Rating (Id)29 A (Tc)
Power Dissipation (Pd)190 W (Tc)
On-Resistance (Rds(on))110 mΩ @ 10 V, 14.5 A
Package TypeTO-263 (D2PAK)
Gate Threshold Voltage (Vgs(th))5 V @ 250 μA

Key Features

  • Automotive-grade reliability and performance.
  • High voltage rating of 600 V.
  • High current rating of 29 A.
  • Low on-resistance of 110 mΩ @ 10 V, 14.5 A.
  • Intrinsic fast-recovery body diode.
  • Surface mount TO-263 (D2PAK) package.
  • Compliant with RoHS standards.

Applications

The STB36NM60ND is suitable for various high-power applications, including:

  • Automotive systems such as electric vehicles, hybrid vehicles, and automotive power supplies.
  • Industrial power supplies and motor control systems.
  • Power conversion and switching applications requiring high reliability and efficiency.

Q & A

  1. What is the voltage rating of the STB36NM60ND MOSFET?
    The voltage rating of the STB36NM60ND is 600 V.
  2. What is the current rating of the STB36NM60ND MOSFET?
    The current rating of the STB36NM60ND is 29 A (Tc).
  3. What is the power dissipation of the STB36NM60ND MOSFET?
    The power dissipation of the STB36NM60ND is 190 W (Tc).
  4. What is the on-resistance of the STB36NM60ND MOSFET?
    The on-resistance of the STB36NM60ND is 110 mΩ @ 10 V, 14.5 A.
  5. What package type does the STB36NM60ND come in?
    The STB36NM60ND comes in a TO-263 (D2PAK) package.
  6. Is the STB36NM60ND RoHS compliant?
    Yes, the STB36NM60ND is RoHS compliant.
  7. What technology is used in the STB36NM60ND MOSFET?
    The STB36NM60ND uses the second generation of MDmesh™ technology.
  8. What are the typical applications of the STB36NM60ND MOSFET?
    The STB36NM60ND is typically used in automotive systems, industrial power supplies, and power conversion applications.
  9. What is the gate threshold voltage of the STB36NM60ND MOSFET?
    The gate threshold voltage of the STB36NM60ND is 5 V @ 250 μA.
  10. Does the STB36NM60ND have an intrinsic fast-recovery body diode?
    Yes, the STB36NM60ND has an intrinsic fast-recovery body diode.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80.4 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2785 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$6.94
23

Please send RFQ , we will respond immediately.

Same Series
STW36NM60ND
STW36NM60ND
MOSFET N-CH 600V 29A TO247

Similar Products

Part Number STB36NM60ND STB26NM60ND STB30NM60ND STB34NM60ND STB36NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 21A (Tc) 25A (Tc) 29A (Tc) 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14.5A, 10V 175mOhm @ 10.5A, 10V 130mOhm @ 12.5A, 10V 110mOhm @ 14.5A, 10V 105mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80.4 nC @ 10 V 54.6 nC @ 10 V 100 nC @ 10 V 80.4 nC @ 10 V 83.6 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2785 pF @ 50 V 1817 pF @ 100 V 2800 pF @ 50 V 2785 pF @ 50 V 2722 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc) 190W (Tc) 210W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D2PAK D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

STPS30H100CT
STPS30H100CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 100V TO220
STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
STF13N60M2
STF13N60M2
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
TDA7718N
TDA7718N
STMicroelectronics
IC AUDIO SIGNAL PROCESSR 28TSSOP
STM32F205RBT6TR
STM32F205RBT6TR
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64LQFP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
STM8AF6246TDSSSX
STM8AF6246TDSSSX
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN