STB36NM60ND
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STMicroelectronics STB36NM60ND

Manufacturer No:
STB36NM60ND
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 29A D2PAK
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The STB36NM60ND is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. It is part of the FDmesh™ II family, utilizing the second generation of MDmesh™ technology. This MOSFET is designed for high-performance applications, particularly in the automotive sector, due to its robust characteristics and reliability.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Current Rating (Id)29 A (Tc)
Power Dissipation (Pd)190 W (Tc)
On-Resistance (Rds(on))110 mΩ @ 10 V, 14.5 A
Package TypeTO-263 (D2PAK)
Gate Threshold Voltage (Vgs(th))5 V @ 250 μA

Key Features

  • Automotive-grade reliability and performance.
  • High voltage rating of 600 V.
  • High current rating of 29 A.
  • Low on-resistance of 110 mΩ @ 10 V, 14.5 A.
  • Intrinsic fast-recovery body diode.
  • Surface mount TO-263 (D2PAK) package.
  • Compliant with RoHS standards.

Applications

The STB36NM60ND is suitable for various high-power applications, including:

  • Automotive systems such as electric vehicles, hybrid vehicles, and automotive power supplies.
  • Industrial power supplies and motor control systems.
  • Power conversion and switching applications requiring high reliability and efficiency.

Q & A

  1. What is the voltage rating of the STB36NM60ND MOSFET?
    The voltage rating of the STB36NM60ND is 600 V.
  2. What is the current rating of the STB36NM60ND MOSFET?
    The current rating of the STB36NM60ND is 29 A (Tc).
  3. What is the power dissipation of the STB36NM60ND MOSFET?
    The power dissipation of the STB36NM60ND is 190 W (Tc).
  4. What is the on-resistance of the STB36NM60ND MOSFET?
    The on-resistance of the STB36NM60ND is 110 mΩ @ 10 V, 14.5 A.
  5. What package type does the STB36NM60ND come in?
    The STB36NM60ND comes in a TO-263 (D2PAK) package.
  6. Is the STB36NM60ND RoHS compliant?
    Yes, the STB36NM60ND is RoHS compliant.
  7. What technology is used in the STB36NM60ND MOSFET?
    The STB36NM60ND uses the second generation of MDmesh™ technology.
  8. What are the typical applications of the STB36NM60ND MOSFET?
    The STB36NM60ND is typically used in automotive systems, industrial power supplies, and power conversion applications.
  9. What is the gate threshold voltage of the STB36NM60ND MOSFET?
    The gate threshold voltage of the STB36NM60ND is 5 V @ 250 μA.
  10. Does the STB36NM60ND have an intrinsic fast-recovery body diode?
    Yes, the STB36NM60ND has an intrinsic fast-recovery body diode.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80.4 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2785 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
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Similar Products

Part Number STB36NM60ND STB26NM60ND STB30NM60ND STB34NM60ND STB36NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 21A (Tc) 25A (Tc) 29A (Tc) 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14.5A, 10V 175mOhm @ 10.5A, 10V 130mOhm @ 12.5A, 10V 110mOhm @ 14.5A, 10V 105mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80.4 nC @ 10 V 54.6 nC @ 10 V 100 nC @ 10 V 80.4 nC @ 10 V 83.6 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2785 pF @ 50 V 1817 pF @ 100 V 2800 pF @ 50 V 2785 pF @ 50 V 2722 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc) 190W (Tc) 210W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D2PAK D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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