STB36NM60ND
  • Share:

STMicroelectronics STB36NM60ND

Manufacturer No:
STB36NM60ND
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 29A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB36NM60ND is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. It is part of the FDmesh™ II family, utilizing the second generation of MDmesh™ technology. This MOSFET is designed for high-performance applications, particularly in the automotive sector, due to its robust characteristics and reliability.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Current Rating (Id)29 A (Tc)
Power Dissipation (Pd)190 W (Tc)
On-Resistance (Rds(on))110 mΩ @ 10 V, 14.5 A
Package TypeTO-263 (D2PAK)
Gate Threshold Voltage (Vgs(th))5 V @ 250 μA

Key Features

  • Automotive-grade reliability and performance.
  • High voltage rating of 600 V.
  • High current rating of 29 A.
  • Low on-resistance of 110 mΩ @ 10 V, 14.5 A.
  • Intrinsic fast-recovery body diode.
  • Surface mount TO-263 (D2PAK) package.
  • Compliant with RoHS standards.

Applications

The STB36NM60ND is suitable for various high-power applications, including:

  • Automotive systems such as electric vehicles, hybrid vehicles, and automotive power supplies.
  • Industrial power supplies and motor control systems.
  • Power conversion and switching applications requiring high reliability and efficiency.

Q & A

  1. What is the voltage rating of the STB36NM60ND MOSFET?
    The voltage rating of the STB36NM60ND is 600 V.
  2. What is the current rating of the STB36NM60ND MOSFET?
    The current rating of the STB36NM60ND is 29 A (Tc).
  3. What is the power dissipation of the STB36NM60ND MOSFET?
    The power dissipation of the STB36NM60ND is 190 W (Tc).
  4. What is the on-resistance of the STB36NM60ND MOSFET?
    The on-resistance of the STB36NM60ND is 110 mΩ @ 10 V, 14.5 A.
  5. What package type does the STB36NM60ND come in?
    The STB36NM60ND comes in a TO-263 (D2PAK) package.
  6. Is the STB36NM60ND RoHS compliant?
    Yes, the STB36NM60ND is RoHS compliant.
  7. What technology is used in the STB36NM60ND MOSFET?
    The STB36NM60ND uses the second generation of MDmesh™ technology.
  8. What are the typical applications of the STB36NM60ND MOSFET?
    The STB36NM60ND is typically used in automotive systems, industrial power supplies, and power conversion applications.
  9. What is the gate threshold voltage of the STB36NM60ND MOSFET?
    The gate threshold voltage of the STB36NM60ND is 5 V @ 250 μA.
  10. Does the STB36NM60ND have an intrinsic fast-recovery body diode?
    Yes, the STB36NM60ND has an intrinsic fast-recovery body diode.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80.4 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2785 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$6.94
23

Please send RFQ , we will respond immediately.

Same Series
STW36NM60ND
STW36NM60ND
MOSFET N-CH 600V 29A TO247

Similar Products

Part Number STB36NM60ND STB26NM60ND STB30NM60ND STB34NM60ND STB36NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 21A (Tc) 25A (Tc) 29A (Tc) 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14.5A, 10V 175mOhm @ 10.5A, 10V 130mOhm @ 12.5A, 10V 110mOhm @ 14.5A, 10V 105mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80.4 nC @ 10 V 54.6 nC @ 10 V 100 nC @ 10 V 80.4 nC @ 10 V 83.6 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2785 pF @ 50 V 1817 pF @ 100 V 2800 pF @ 50 V 2785 pF @ 50 V 2722 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc) 190W (Tc) 210W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D2PAK D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
Z0107NA 5AL2
Z0107NA 5AL2
STMicroelectronics
TRIAC SENS GATE 800V 1A TO92
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
STM32L4A6QGI6P
STM32L4A6QGI6P
STMicroelectronics
IC MCU 32BIT 1MB FLASH 132UFBGA
STG3157CTR
STG3157CTR
STMicroelectronics
IC SWITCH SPDT SINGLE SOT323-6L
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
L7915CP
L7915CP
STMicroelectronics
IC REG LINEAR -15V 1.5A TO220FP
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA