STMicroelectronics STB26NM60ND

Manufacturer No:: STB26NM60ND
Manufacturer:: STMicroelectronics
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 600V 21A D2PAK
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Product Introduction

Overview

The STB26NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, utilizing the second generation of MDmesh™ technology. This device is part of the FDmesh™ II series and is known for its extremely low on-resistance and superior switching performance. It features an intrinsic fast-recovery body diode and is available in D²PAK, TO-220FP, TO-220, and TO-247 packages. The STB26NM60ND is designed to meet the demands of high-power switching applications, offering excellent thermal and electrical characteristics.

Key Specifications

Parameter	Value	Unit
Drain-Source Breakdown Voltage (V_BRDSS)	600	V
Maximum Drain Current (I_D)	21	A
Maximum Gate-Source Voltage (V_GS)	±25	V
Static Drain-Source On-Resistance (R_DS(on))	0.145 (typ), 0.175 (max)	Ω
Maximum Junction Temperature (T_J)	150	°C
Thermal Resistance Junction-Case (R_thj-case)	0.66 (D²PAK, TO-220), 3.57 (TO-220FP)	°C/W
Input Capacitance (C_iss)	1817 pF	pF
Output Capacitance (C_oss)	90 pF	pF
Gate Threshold Voltage (V_GS(th))	3-5 V	V

Key Features

100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
Intrinsic fast-recovery body diode
Available in D²PAK, TO-220FP, TO-220, and TO-247 packages
ECOPACK® compliant for environmental sustainability

Applications

The STB26NM60ND is ideal for various high-power switching applications, including:

Bridge topologies
ZVS phase-shift converters
Power supplies and DC-DC converters
Motor control and drives
High-frequency switching circuits

Q & A

What is the maximum drain-source voltage of the STB26NM60ND?
The maximum drain-source voltage (V_DS) is 600 V.
What is the maximum drain current of the STB26NM60ND?
The maximum drain current (I_D) is 21 A.
What is the typical on-resistance of the STB26NM60ND?
The typical static drain-source on-resistance (R_DS(on)) is 0.145 Ω.
What are the available packages for the STB26NM60ND?
The device is available in D²PAK, TO-220FP, TO-220, and TO-247 packages.
What is the maximum junction temperature of the STB26NM60ND?
The maximum junction temperature (T_J) is 150 °C.
What are some key applications of the STB26NM60ND?
Key applications include bridge topologies, ZVS phase-shift converters, power supplies, DC-DC converters, motor control, and high-frequency switching circuits.
Does the STB26NM60ND have any environmental compliance?
Yes, the device is ECOPACK® compliant, meeting various environmental standards.
What is the gate threshold voltage range of the STB26NM60ND?
The gate threshold voltage (V_GS(th)) range is 3-5 V.
What is the input capacitance of the STB26NM60ND?
The input capacitance (C_iss) is 1817 pF.
What is the reverse recovery time of the STB26NM60ND's body diode?
The reverse recovery time (t_rr) is approximately 170 ns.

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Quantity: 309

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Same Series

Part Number	STB26NM60ND	STB36NM60ND	STB28NM60ND	STB27NM60ND	STB21NM60ND	STB23NM60ND	STB25NM60ND	STB26NM60N
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Status	Obsolete	Active	Not For New Designs	Obsolete	Obsolete	Obsolete	Obsolete	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	600 V	600 V	600 V	600 V	600 V	600 V	600 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)	29A (Tc)	23A (Tc)	21A (Tc)	17A (Tc)	19.5A (Tc)	21A (Tc)	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	175mOhm @ 10.5A, 10V	110mOhm @ 14.5A, 10V	150mOhm @ 11.5A, 10V	160mOhm @ 10.5A, 10V	220mOhm @ 8.5A, 10V	180mOhm @ 10A, 10V	160mOhm @ 10.5A, 10V	165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	5V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	54.6 nC @ 10 V	80.4 nC @ 10 V	62.5 nC @ 10 V	80 nC @ 10 V	60 nC @ 10 V	70 nC @ 10 V	80 nC @ 10 V	60 nC @ 10 V
Vgs (Max)	±25V	±25V	±25V	±25V	±25V	±25V	±25V	±30V
Input Capacitance (Ciss) (Max) @ Vds	1817 pF @ 100 V	2785 pF @ 50 V	2090 pF @ 100 V	2400 pF @ 50 V	1800 pF @ 50 V	2050 pF @ 50 V	2400 pF @ 50 V	1800 pF @ 50 V
FET Feature	-	-	-	-	-	-	-	-
Power Dissipation (Max)	190W (Tc)	190W (Tc)	190W (Tc)	160W (Tc)	140W (Tc)	150W (Tc)	160W (Tc)	140W (Tc)
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	D²PAK (TO-263)	D²PAK (TO-263)	D²PAK (TO-263)	D²PAK (TO-263)	D2PAK	D2PAK	D2PAK	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	175mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	54.6 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	1817 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	190W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STMicroelectronics STB26NM60ND

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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