English
STB26NM60ND
  • Share:

STMicroelectronics STB26NM60ND

Manufacturer No:
STB26NM60ND
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 21A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB26NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, utilizing the second generation of MDmesh™ technology. This device is part of the FDmesh™ II series and is known for its extremely low on-resistance and superior switching performance. It features an intrinsic fast-recovery body diode and is available in D²PAK, TO-220FP, TO-220, and TO-247 packages. The STB26NM60ND is designed to meet the demands of high-power switching applications, offering excellent thermal and electrical characteristics.

Key Specifications

Parameter Value Unit
Drain-Source Breakdown Voltage (VBRDSS) 600 V
Maximum Drain Current (ID) 21 A
Maximum Gate-Source Voltage (VGS) ±25 V
Static Drain-Source On-Resistance (RDS(on)) 0.145 (typ), 0.175 (max) Ω
Maximum Junction Temperature (TJ) 150 °C
Thermal Resistance Junction-Case (Rthj-case) 0.66 (D²PAK, TO-220), 3.57 (TO-220FP) °C/W
Input Capacitance (Ciss) 1817 pF pF
Output Capacitance (Coss) 90 pF pF
Gate Threshold Voltage (VGS(th)) 3-5 V V

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities
  • Intrinsic fast-recovery body diode
  • Available in D²PAK, TO-220FP, TO-220, and TO-247 packages
  • ECOPACK® compliant for environmental sustainability

Applications

The STB26NM60ND is ideal for various high-power switching applications, including:

  • Bridge topologies
  • ZVS phase-shift converters
  • Power supplies and DC-DC converters
  • Motor control and drives
  • High-frequency switching circuits

Q & A

  1. What is the maximum drain-source voltage of the STB26NM60ND?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum drain current of the STB26NM60ND?

    The maximum drain current (ID) is 21 A.

  3. What is the typical on-resistance of the STB26NM60ND?

    The typical static drain-source on-resistance (RDS(on)) is 0.145 Ω.

  4. What are the available packages for the STB26NM60ND?

    The device is available in D²PAK, TO-220FP, TO-220, and TO-247 packages.

  5. What is the maximum junction temperature of the STB26NM60ND?

    The maximum junction temperature (TJ) is 150 °C.

  6. What are some key applications of the STB26NM60ND?

    Key applications include bridge topologies, ZVS phase-shift converters, power supplies, DC-DC converters, motor control, and high-frequency switching circuits.

  7. Does the STB26NM60ND have any environmental compliance?

    Yes, the device is ECOPACK® compliant, meeting various environmental standards.

  8. What is the gate threshold voltage range of the STB26NM60ND?

    The gate threshold voltage (VGS(th)) range is 3-5 V.

  9. What is the input capacitance of the STB26NM60ND?

    The input capacitance (Ciss) is 1817 pF.

  10. What is the reverse recovery time of the STB26NM60ND's body diode?

    The reverse recovery time (trr) is approximately 170 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54.6 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1817 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
309

Please send RFQ , we will respond immediately.

Same Series
STF26NM60ND
STF26NM60ND
MOSFET N-CH 600V 21A TO220FP
STP26NM60ND
STP26NM60ND
MOSFET N-CH 600V 21A TO220
STW26NM60ND
STW26NM60ND
MOSFET N-CH 600V 21A TO247

Similar Products

Part Number STB26NM60ND STB36NM60ND STB28NM60ND STB27NM60ND STB21NM60ND STB23NM60ND STB25NM60ND STB26NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Not For New Designs Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 29A (Tc) 23A (Tc) 21A (Tc) 17A (Tc) 19.5A (Tc) 21A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 10.5A, 10V 110mOhm @ 14.5A, 10V 150mOhm @ 11.5A, 10V 160mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V 180mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54.6 nC @ 10 V 80.4 nC @ 10 V 62.5 nC @ 10 V 80 nC @ 10 V 60 nC @ 10 V 70 nC @ 10 V 80 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1817 pF @ 100 V 2785 pF @ 50 V 2090 pF @ 100 V 2400 pF @ 50 V 1800 pF @ 50 V 2050 pF @ 50 V 2400 pF @ 50 V 1800 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc) 160W (Tc) 140W (Tc) 150W (Tc) 160W (Tc) 140W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK D2PAK D2PAK D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3

Related Product By Brand

STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
STF13N60M2
STF13N60M2
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STM32F427VGT7
STM32F427VGT7
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
LM258PT
LM258PT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8TSSOP
LM293PT
LM293PT
STMicroelectronics
IC VOLT COMPARATOR DUAL 8-TSSOP
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16