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STB26NM60ND
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STMicroelectronics STB26NM60ND

Manufacturer No:
STB26NM60ND
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 21A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB26NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, utilizing the second generation of MDmesh™ technology. This device is part of the FDmesh™ II series and is known for its extremely low on-resistance and superior switching performance. It features an intrinsic fast-recovery body diode and is available in D²PAK, TO-220FP, TO-220, and TO-247 packages. The STB26NM60ND is designed to meet the demands of high-power switching applications, offering excellent thermal and electrical characteristics.

Key Specifications

Parameter Value Unit
Drain-Source Breakdown Voltage (VBRDSS) 600 V
Maximum Drain Current (ID) 21 A
Maximum Gate-Source Voltage (VGS) ±25 V
Static Drain-Source On-Resistance (RDS(on)) 0.145 (typ), 0.175 (max) Ω
Maximum Junction Temperature (TJ) 150 °C
Thermal Resistance Junction-Case (Rthj-case) 0.66 (D²PAK, TO-220), 3.57 (TO-220FP) °C/W
Input Capacitance (Ciss) 1817 pF pF
Output Capacitance (Coss) 90 pF pF
Gate Threshold Voltage (VGS(th)) 3-5 V V

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities
  • Intrinsic fast-recovery body diode
  • Available in D²PAK, TO-220FP, TO-220, and TO-247 packages
  • ECOPACK® compliant for environmental sustainability

Applications

The STB26NM60ND is ideal for various high-power switching applications, including:

  • Bridge topologies
  • ZVS phase-shift converters
  • Power supplies and DC-DC converters
  • Motor control and drives
  • High-frequency switching circuits

Q & A

  1. What is the maximum drain-source voltage of the STB26NM60ND?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum drain current of the STB26NM60ND?

    The maximum drain current (ID) is 21 A.

  3. What is the typical on-resistance of the STB26NM60ND?

    The typical static drain-source on-resistance (RDS(on)) is 0.145 Ω.

  4. What are the available packages for the STB26NM60ND?

    The device is available in D²PAK, TO-220FP, TO-220, and TO-247 packages.

  5. What is the maximum junction temperature of the STB26NM60ND?

    The maximum junction temperature (TJ) is 150 °C.

  6. What are some key applications of the STB26NM60ND?

    Key applications include bridge topologies, ZVS phase-shift converters, power supplies, DC-DC converters, motor control, and high-frequency switching circuits.

  7. Does the STB26NM60ND have any environmental compliance?

    Yes, the device is ECOPACK® compliant, meeting various environmental standards.

  8. What is the gate threshold voltage range of the STB26NM60ND?

    The gate threshold voltage (VGS(th)) range is 3-5 V.

  9. What is the input capacitance of the STB26NM60ND?

    The input capacitance (Ciss) is 1817 pF.

  10. What is the reverse recovery time of the STB26NM60ND's body diode?

    The reverse recovery time (trr) is approximately 170 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54.6 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1817 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STF26NM60ND
STF26NM60ND
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STP26NM60ND
STP26NM60ND
MOSFET N-CH 600V 21A TO220
STW26NM60ND
STW26NM60ND
MOSFET N-CH 600V 21A TO247

Similar Products

Part Number STB26NM60ND STB36NM60ND STB28NM60ND STB27NM60ND STB21NM60ND STB23NM60ND STB25NM60ND STB26NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Not For New Designs Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 29A (Tc) 23A (Tc) 21A (Tc) 17A (Tc) 19.5A (Tc) 21A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 10.5A, 10V 110mOhm @ 14.5A, 10V 150mOhm @ 11.5A, 10V 160mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V 180mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54.6 nC @ 10 V 80.4 nC @ 10 V 62.5 nC @ 10 V 80 nC @ 10 V 60 nC @ 10 V 70 nC @ 10 V 80 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1817 pF @ 100 V 2785 pF @ 50 V 2090 pF @ 100 V 2400 pF @ 50 V 1800 pF @ 50 V 2050 pF @ 50 V 2400 pF @ 50 V 1800 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc) 160W (Tc) 140W (Tc) 150W (Tc) 160W (Tc) 140W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK D2PAK D2PAK D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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