Overview
The STB26NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, utilizing the second generation of MDmesh™ technology. This device is part of the FDmesh™ II series and is known for its extremely low on-resistance and superior switching performance. It features an intrinsic fast-recovery body diode and is available in D²PAK, TO-220FP, TO-220, and TO-247 packages. The STB26NM60ND is designed to meet the demands of high-power switching applications, offering excellent thermal and electrical characteristics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (VBRDSS) | 600 | V |
| Maximum Drain Current (ID) | 21 | A |
| Maximum Gate-Source Voltage (VGS) | ±25 | V |
| Static Drain-Source On-Resistance (RDS(on)) | 0.145 (typ), 0.175 (max) | Ω |
| Maximum Junction Temperature (TJ) | 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 0.66 (D²PAK, TO-220), 3.57 (TO-220FP) | °C/W |
| Input Capacitance (Ciss) | 1817 pF | pF |
| Output Capacitance (Coss) | 90 pF | pF |
| Gate Threshold Voltage (VGS(th)) | 3-5 V | V |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
- Intrinsic fast-recovery body diode
- Available in D²PAK, TO-220FP, TO-220, and TO-247 packages
- ECOPACK® compliant for environmental sustainability
Applications
The STB26NM60ND is ideal for various high-power switching applications, including:
- Bridge topologies
- ZVS phase-shift converters
- Power supplies and DC-DC converters
- Motor control and drives
- High-frequency switching circuits
Q & A
- What is the maximum drain-source voltage of the STB26NM60ND?
The maximum drain-source voltage (VDS) is 600 V.
- What is the maximum drain current of the STB26NM60ND?
The maximum drain current (ID) is 21 A.
- What is the typical on-resistance of the STB26NM60ND?
The typical static drain-source on-resistance (RDS(on)) is 0.145 Ω.
- What are the available packages for the STB26NM60ND?
The device is available in D²PAK, TO-220FP, TO-220, and TO-247 packages.
- What is the maximum junction temperature of the STB26NM60ND?
The maximum junction temperature (TJ) is 150 °C.
- What are some key applications of the STB26NM60ND?
Key applications include bridge topologies, ZVS phase-shift converters, power supplies, DC-DC converters, motor control, and high-frequency switching circuits.
- Does the STB26NM60ND have any environmental compliance?
Yes, the device is ECOPACK® compliant, meeting various environmental standards.
- What is the gate threshold voltage range of the STB26NM60ND?
The gate threshold voltage (VGS(th)) range is 3-5 V.
- What is the input capacitance of the STB26NM60ND?
The input capacitance (Ciss) is 1817 pF.
- What is the reverse recovery time of the STB26NM60ND's body diode?
The reverse recovery time (trr) is approximately 170 ns.
