STW26NM60ND
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STMicroelectronics STW26NM60ND

Manufacturer No:
STW26NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 21A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW26NM60ND is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ II series, known for its advanced technology that enhances power density and efficiency. The STW26NM60ND is packaged in a TO-247 package and is designed to meet the demands of high-power applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (Drain-Source On-Resistance)0.145 Ω (typical)
ID (Drain Current)21 A
Ptot (Total Power Dissipation)Dependent on package and cooling conditions
TJ (Junction Temperature)-55°C to 150°C
PackageTO-247

Key Features

  • 100% avalanche tested for reliability
  • Low input capacitance and gate charge for improved switching performance
  • High power density due to FDmesh™ II technology
  • Fast diode for reduced reverse recovery time
  • High thermal performance and efficiency

Applications

  • Switch-mode power supplies (SMPS)
  • DC-DC converters
  • Motor control and drives
  • Power factor correction (PFC) circuits
  • High-power industrial and automotive applications

Q & A

  1. What is the maximum drain-source voltage of the STW26NM60ND?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance of the STW26NM60ND?
    The typical on-resistance (RDS(on)) is 0.145 Ω.
  3. What is the maximum drain current of the STW26NM60ND?
    The maximum drain current (ID) is 21 A.
  4. What package type is the STW26NM60ND available in?
    The STW26NM60ND is available in a TO-247 package.
  5. Is the STW26NM60ND 100% avalanche tested?
    Yes, the STW26NM60ND is 100% avalanche tested.
  6. What technology is used in the STW26NM60ND?
    The STW26NM60ND uses FDmesh™ II technology.
  7. What are some common applications of the STW26NM60ND?
    Common applications include switch-mode power supplies, DC-DC converters, motor control, and power factor correction circuits.
  8. What is the junction temperature range of the STW26NM60ND?
    The junction temperature range is -55°C to 150°C.
  9. Does the STW26NM60ND have a fast diode?
    Yes, the STW26NM60ND includes a fast diode.
  10. Where can I find detailed specifications for the STW26NM60ND?
    Detailed specifications can be found on the STMicroelectronics official website, as well as on distributor websites like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54.6 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1817 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW26NM60ND STW28NM60ND STW36NM60ND STW27NM60ND STW21NM60ND STW23NM60ND STW25NM60ND STW26NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 23A (Tc) 29A (Tc) 21A (Tc) 17A (Tc) 19.5A (Tc) 21A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 10.5A, 10V 150mOhm @ 11.5A, 10V 110mOhm @ 14.5A, 10V 160mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V 180mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54.6 nC @ 10 V 62.5 nC @ 10 V 80.4 nC @ 10 V - 60 nC @ 10 V 70 nC @ 10 V 80 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1817 pF @ 100 V 2090 pF @ 100 V 2785 pF @ 50 V - 1800 pF @ 50 V 2050 pF @ 50 V 2400 pF @ 50 V 1800 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc) 160W (Tc) 140W (Tc) 150W (Tc) 160W (Tc) 140W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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