Overview
The STW26NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is designed to offer one of the world’s lowest on-resistance and gate charge, making it highly suitable for demanding high-efficiency converters. The STW26NM60N is packaged in a TO-247 package and is 100% avalanche tested, ensuring robust performance in various applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Drain current (continuous) at TC = 25 °C (ID) | 20 | A |
| Drain current (continuous) at TC = 100 °C (ID) | 12.6 | A |
| Drain current (pulsed) (IDM) | 80 | A |
| Total dissipation at TC = 25 °C (PTOT) | 140 | W |
| Peak diode recovery voltage slope (dv/dt) | 15 | V/ns |
| Storage temperature range (Tstg) | -55 to 150 | °C |
| Operating junction temperature range (Tj) | -55 to 150 | °C |
| Thermal resistance junction-case (Rthj-case) | 0.89 | °C/W |
| Thermal resistance junction-ambient (Rthj-amb) | 50 | °C/W |
| Drain-source breakdown voltage (V(BR)DSS) | 600 | V |
| Static drain-source on-resistance (RDS(on)) | 0.135 (typ.), 0.165 (max.) | Ω |
| Gate-source charge (Qgs) | 8.5 | nC |
| Gate-drain charge (Qgd) | 30 | nC |
| Gate input resistance (RG) | 2.8 | Ω |
Key Features
- 100% avalanche tested for robust reliability
- Low input capacitance and gate charge for high efficiency
- Low gate input resistance for better switching performance
- Vertical structure combined with strip layout for low on-resistance
- Suitable for demanding high-efficiency converters
Applications
- Switching applications, including power supplies and DC-DC converters
- High-efficiency power conversion systems
- Industrial and automotive power management systems
Q & A
- What is the maximum drain-source voltage of the STW26NM60N?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance of the STW26NM60N?
The typical on-resistance (RDS(on)) is 0.135 Ω.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 20 A.
- What is the thermal resistance junction-case of the STW26NM60N?
The thermal resistance junction-case (Rthj-case) is 0.89 °C/W.
- What are the key features of the MDmesh™ technology used in the STW26NM60N?
The MDmesh™ technology features low on-resistance, low gate charge, and a vertical structure combined with a strip layout.
- What are the typical applications of the STW26NM60N?
The STW26NM60N is typically used in switching applications, high-efficiency power conversion systems, and industrial and automotive power management systems.
- What is the maximum gate-source voltage of the STW26NM60N?
The maximum gate-source voltage (VGS) is ±30 V.
- What is the single pulse avalanche current of the STW26NM60N?
The single pulse avalanche current (IAS) is 6 A.
- What is the storage temperature range of the STW26NM60N?
The storage temperature range (Tstg) is -55 to 150 °C.
- What package type is the STW26NM60N available in?
The STW26NM60N is available in a TO-247 package.
