STW24NM60N
  • Share:

STMicroelectronics STW24NM60N

Manufacturer No:
STW24NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 17A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW24NM60N is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is part of a family that includes the STF24NM60N, STI24NM60N, and STP24NM60N, each available in different packages such as TO-220FP, I²PAK, TO-220, and TO-247. The STW24NM60N, specifically in the TO-247 package, is designed to offer one of the world’s lowest on-resistance and gate charge, making it highly suitable for demanding high-efficiency converters.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 0.168 (typ.), 0.19 (max.) Ω
ID (Drain Current, continuous at TC = 25°C) 17 A
ID (Drain Current, continuous at TC = 100°C) 11 A
IDM (Drain Current, pulsed) 68 A
VGS (Gate-Source Voltage) ±30 V
TJ (Operating Junction Temperature) -55 to 150 °C
Tstg (Storage Temperature) -55 to 150 °C
PTOT (Total Dissipation at TC = 25°C) 125 W
Rthj-case (Thermal Resistance Junction-Case) 4.17 °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 62.5 °C/W

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency due to low on-resistance and gate charge
  • Available in TO-247 package, among others
  • ECOPACK® compliant for environmental sustainability

Applications

  • Switching applications, including high-efficiency converters
  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial and automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW24NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance (RDS(on)) of the STW24NM60N?

    The typical on-resistance (RDS(on)) is 0.168 Ω.

  3. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 17 A.

  4. What is the maximum gate-source voltage (VGS)?

    The maximum gate-source voltage (VGS) is ±30 V.

  5. What are the operating and storage temperature ranges for the STW24NM60N?

    The operating junction temperature range is -55 to 150°C, and the storage temperature range is also -55 to 150°C.

  6. What is the total dissipation (PTOT) at TC = 25°C?

    The total dissipation (PTOT) at TC = 25°C is 125 W.

  7. What is the thermal resistance junction-case (Rthj-case) for the TO-247 package?

    The thermal resistance junction-case (Rthj-case) for the TO-247 package is 4.17 °C/W.

  8. Is the STW24NM60N environmentally compliant?

    Yes, the STW24NM60N is available in ECOPACK® compliant packages, ensuring environmental sustainability.

  9. What are some common applications for the STW24NM60N?

    Common applications include switching applications, power supplies, DC-DC converters, motor control, and industrial and automotive systems.

  10. What is the significance of MDmesh™ technology in the STW24NM60N?

    The MDmesh™ technology provides a vertical structure combined with a strip layout, resulting in one of the world’s lowest on-resistance and gate charge, making it highly efficient for demanding applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$6.00
12

Please send RFQ , we will respond immediately.

Same Series
STI24NM60N
STI24NM60N
MOSFET N CH 600V 17A I2PAK
STW24NM60N
STW24NM60N
MOSFET N-CH 600V 17A TO247
STF24NM60N
STF24NM60N
MOSFET N-CH 600V 17A TO220FP

Similar Products

Part Number STW24NM60N STW34NM60N STW26NM60N STW25NM60N STW24NM65N STW21NM60N STW22NM60N STW23NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 650 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 29A (Tc) 20A (Tc) 21A (Tc) 19A (Tc) 17A (Tc) 16A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 8A, 10V 105mOhm @ 14.5A, 10V 165mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 190mOhm @ 9.5A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V 180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 80 nC @ 10 V 60 nC @ 10 V 84 nC @ 10 V 70 nC @ 10 V 66 nC @ 10 V 44 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±30V ±25V ±30V ±25V ±25V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 50 V 2722 pF @ 100 V 1800 pF @ 50 V 2400 pF @ 50 V 2500 pF @ 50 V 1900 pF @ 50 V 1330 pF @ 50 V 2050 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 125W (Tc) 250W (Tc) 140W (Tc) 160W (Tc) 160W (Tc) 140W (Tc) 125W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

SM15T75AY
SM15T75AY
STMicroelectronics
TVS DIODE 64.1VWM 134VC SMC
SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STD14NM50N
STD14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A DPAK
STM32L433RCI6
STM32L433RCI6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 64UFBGA
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
STP24DP05BTR
STP24DP05BTR
STMicroelectronics
IC LED DRIVER LINEAR 80MA 48TQFP
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
L7824ACV
L7824ACV
STMicroelectronics
IC REG LINEAR 24V 1.5A TO220AB
L7809ACD2T-TR
L7809ACD2T-TR
STMicroelectronics
IC REG LINEAR 9V 1.5A D2PAK
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN