STW34NM60N
  • Share:

STMicroelectronics STW34NM60N

Manufacturer No:
STW34NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 29A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW34NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This revolutionary device combines a vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge. This makes it highly suitable for the most demanding high-efficiency converters.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 600 V
Gate-source voltage (VGS) ± 25 V
Drain current (continuous) at TC = 25 °C (ID) 31.5 A
Drain current (continuous) at TC = 100 °C (ID) 20 A
Pulsed drain current (IDM) 126 A
Total dissipation at TC = 25 °C (PTOT) 250 W
Static drain-source on-resistance (RDS(on)) 0.092 Ω
Gate threshold voltage (VGS(th)) 2 - 4 V
Thermal resistance junction-case (Rthj-case) 0.5 °C/W
Max. operating junction temperature (Tj) 150 °C
Storage temperature (Tstg) -55 to 150 °C

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High electrical and thermal efficiency due to the additional Kelvin-source lead
  • Suitable for high-efficiency converters and demanding switching applications

Applications

The STW34NM60N is ideal for various high-efficiency power conversion applications, including:

  • Switching power supplies (SMPS)
  • Data centers
  • Solar microinverters
  • Industrial and automotive applications

Q & A

  1. What is the drain-source voltage rating of the STW34NM60N?

    The drain-source voltage rating is 600 V.

  2. What is the continuous drain current at 25 °C for the STW34NM60N?

    The continuous drain current at 25 °C is 31.5 A.

  3. What is the typical on-resistance of the STW34NM60N?

    The typical on-resistance is 0.092 Ω.

  4. What is the maximum operating junction temperature for the STW34NM60N?

    The maximum operating junction temperature is 150 °C.

  5. Is the STW34NM60N 100% avalanche tested?

    Yes, the STW34NM60N is 100% avalanche tested.

  6. What are the typical applications of the STW34NM60N?

    The STW34NM60N is typically used in switching power supplies, data centers, solar microinverters, and industrial and automotive applications.

  7. What is the gate threshold voltage range for the STW34NM60N?

    The gate threshold voltage range is 2 to 4 V.

  8. What is the thermal resistance junction-case for the STW34NM60N?

    The thermal resistance junction-case is 0.5 °C/W.

  9. Is the STW34NM60N available in different packages?

    Yes, it is available in packages such as TO-247.

  10. Does the STW34NM60N have any special features for thermal efficiency?

    Yes, it features an additional Kelvin-source lead for better thermal and electrical efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:105mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2722 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$11.09
37

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW34NM60N STW34NM60ND STW36NM60N STW24NM60N STW30NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 29A (Tc) 29A (Tc) 17A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 14.5A, 10V 110mOhm @ 14.5A, 10V 105mOhm @ 14.5A, 10V 190mOhm @ 8A, 10V 130mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 80.4 nC @ 10 V 83.6 nC @ 10 V 46 nC @ 10 V 91 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2722 pF @ 100 V 2785 pF @ 50 V 2722 pF @ 100 V 1400 pF @ 50 V 2700 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 250W (Tc) 190W (Tc) 210W (Tc) 125W (Tc) 190W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

STM32L412CBU6
STM32L412CBU6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 48UFQFPN
STM32F723ZET6
STM32F723ZET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32F423RHT6
STM32F423RHT6
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 64LQFP
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
FDA801B-VYT
FDA801B-VYT
STMicroelectronics
IC AMP CLASS D QUAD 50W 64LQFP
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
ST2129BQTR
ST2129BQTR
STMicroelectronics
IC TRNSLTR BIDIRECTIONAL 8QFN
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24