STW34NM60N
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STMicroelectronics STW34NM60N

Manufacturer No:
STW34NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 29A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW34NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This revolutionary device combines a vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge. This makes it highly suitable for the most demanding high-efficiency converters.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 600 V
Gate-source voltage (VGS) ± 25 V
Drain current (continuous) at TC = 25 °C (ID) 31.5 A
Drain current (continuous) at TC = 100 °C (ID) 20 A
Pulsed drain current (IDM) 126 A
Total dissipation at TC = 25 °C (PTOT) 250 W
Static drain-source on-resistance (RDS(on)) 0.092 Ω
Gate threshold voltage (VGS(th)) 2 - 4 V
Thermal resistance junction-case (Rthj-case) 0.5 °C/W
Max. operating junction temperature (Tj) 150 °C
Storage temperature (Tstg) -55 to 150 °C

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High electrical and thermal efficiency due to the additional Kelvin-source lead
  • Suitable for high-efficiency converters and demanding switching applications

Applications

The STW34NM60N is ideal for various high-efficiency power conversion applications, including:

  • Switching power supplies (SMPS)
  • Data centers
  • Solar microinverters
  • Industrial and automotive applications

Q & A

  1. What is the drain-source voltage rating of the STW34NM60N?

    The drain-source voltage rating is 600 V.

  2. What is the continuous drain current at 25 °C for the STW34NM60N?

    The continuous drain current at 25 °C is 31.5 A.

  3. What is the typical on-resistance of the STW34NM60N?

    The typical on-resistance is 0.092 Ω.

  4. What is the maximum operating junction temperature for the STW34NM60N?

    The maximum operating junction temperature is 150 °C.

  5. Is the STW34NM60N 100% avalanche tested?

    Yes, the STW34NM60N is 100% avalanche tested.

  6. What are the typical applications of the STW34NM60N?

    The STW34NM60N is typically used in switching power supplies, data centers, solar microinverters, and industrial and automotive applications.

  7. What is the gate threshold voltage range for the STW34NM60N?

    The gate threshold voltage range is 2 to 4 V.

  8. What is the thermal resistance junction-case for the STW34NM60N?

    The thermal resistance junction-case is 0.5 °C/W.

  9. Is the STW34NM60N available in different packages?

    Yes, it is available in packages such as TO-247.

  10. Does the STW34NM60N have any special features for thermal efficiency?

    Yes, it features an additional Kelvin-source lead for better thermal and electrical efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:105mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2722 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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In Stock

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Similar Products

Part Number STW34NM60N STW34NM60ND STW36NM60N STW24NM60N STW30NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 29A (Tc) 29A (Tc) 17A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 14.5A, 10V 110mOhm @ 14.5A, 10V 105mOhm @ 14.5A, 10V 190mOhm @ 8A, 10V 130mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 80.4 nC @ 10 V 83.6 nC @ 10 V 46 nC @ 10 V 91 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2722 pF @ 100 V 2785 pF @ 50 V 2722 pF @ 100 V 1400 pF @ 50 V 2700 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 250W (Tc) 190W (Tc) 210W (Tc) 125W (Tc) 190W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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