STW34NM60ND
  • Share:

STMicroelectronics STW34NM60ND

Manufacturer No:
STW34NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 29A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW34NM60ND is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device utilizes ST's advanced STripFET F8 technology, featuring an enhanced trench gate structure. It is designed to offer superior performance in high-voltage applications, particularly in flyback converters and LED lighting systems. The MOSFET is known for its low on-state resistance, high current handling, and robust avalanche capabilities, making it a reliable choice for demanding power management tasks.

Key Specifications

ParameterValue
Maximum Drain-Source Voltage (Vds)600 V
Maximum Gate-Source Voltage (Vgs)25 V
Maximum Gate-Threshold Voltage (Vgs(th))5 V
Maximum Drain Current (Id)29 A
Maximum Junction Temperature (Tj)150 °C
Maximum Power Dissipation (Pd)190 W
On-State Resistance (Rds(on))0.11 Ω
Total Gate Charge (Qg)80.4 nC
Rise Time (tr)53.4 ns
Output Capacitance (Coss)168 pF
PackageTO-247

Key Features

  • Utilizes ST's STripFET F8 technology with an enhanced trench gate structure.
  • 600 V maximum drain-source voltage.
  • Low on-state resistance (Rds(on)) of 0.11 Ω.
  • High current handling capability of up to 29 A.
  • 100% avalanche tested for robustness.
  • Low input capacitance and gate charge.
  • Zener-protected for enhanced reliability.

Applications

The STW34NM60ND is ideal for various high-voltage applications, including:

  • Flyback converters.
  • LED lighting systems.
  • Switching power supplies.
  • High-power DC-DC converters.
  • Other high-voltage power management systems.

Q & A

  1. What is the maximum drain-source voltage of the STW34NM60ND?
    The maximum drain-source voltage is 600 V.
  2. What is the maximum drain current of the STW34NM60ND?
    The maximum drain current is 29 A.
  3. What is the on-state resistance (Rds(on)) of the STW34NM60ND?
    The on-state resistance is 0.11 Ω.
  4. What is the maximum junction temperature of the STW34NM60ND?
    The maximum junction temperature is 150 °C.
  5. Is the STW34NM60ND 100% avalanche tested?
    Yes, the STW34NM60ND is 100% avalanche tested.
  6. What package type is the STW34NM60ND available in?
    The STW34NM60ND is available in the TO-247 package.
  7. What are some common applications of the STW34NM60ND?
    Common applications include flyback converters, LED lighting systems, and high-power DC-DC converters.
  8. What technology does the STW34NM60ND use?
    The STW34NM60ND uses ST's STripFET F8 technology.
  9. What is the total gate charge (Qg) of the STW34NM60ND?
    The total gate charge is 80.4 nC.
  10. What is the rise time (tr) of the STW34NM60ND?
    The rise time is 53.4 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80.4 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2785 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$12.66
30

Please send RFQ , we will respond immediately.

Same Series
STB34NM60ND
STB34NM60ND
MOSFET N-CH 600V 29A D2PAK
STF34NM60ND
STF34NM60ND
MOSFET N-CH 600V 29A TO220FP
STP34NM60ND
STP34NM60ND
MOSFET N-CH 600V 29A TO220

Similar Products

Part Number STW34NM60ND STW36NM60ND STW30NM60ND STW34NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 29A (Tc) 25A (Tc) 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14.5A, 10V 110mOhm @ 14.5A, 10V 130mOhm @ 12.5A, 10V 105mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80.4 nC @ 10 V 80.4 nC @ 10 V 100 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2785 pF @ 50 V 2785 pF @ 50 V 2800 pF @ 50 V 2722 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc) 250W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
TMMDB3TG
TMMDB3TG
STMicroelectronics
DIAC 30-34V 2A MINIMELF
T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
STM32F407VGT6TR
STM32F407VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO