STW34NM60ND
  • Share:

STMicroelectronics STW34NM60ND

Manufacturer No:
STW34NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 29A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW34NM60ND is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device utilizes ST's advanced STripFET F8 technology, featuring an enhanced trench gate structure. It is designed to offer superior performance in high-voltage applications, particularly in flyback converters and LED lighting systems. The MOSFET is known for its low on-state resistance, high current handling, and robust avalanche capabilities, making it a reliable choice for demanding power management tasks.

Key Specifications

ParameterValue
Maximum Drain-Source Voltage (Vds)600 V
Maximum Gate-Source Voltage (Vgs)25 V
Maximum Gate-Threshold Voltage (Vgs(th))5 V
Maximum Drain Current (Id)29 A
Maximum Junction Temperature (Tj)150 °C
Maximum Power Dissipation (Pd)190 W
On-State Resistance (Rds(on))0.11 Ω
Total Gate Charge (Qg)80.4 nC
Rise Time (tr)53.4 ns
Output Capacitance (Coss)168 pF
PackageTO-247

Key Features

  • Utilizes ST's STripFET F8 technology with an enhanced trench gate structure.
  • 600 V maximum drain-source voltage.
  • Low on-state resistance (Rds(on)) of 0.11 Ω.
  • High current handling capability of up to 29 A.
  • 100% avalanche tested for robustness.
  • Low input capacitance and gate charge.
  • Zener-protected for enhanced reliability.

Applications

The STW34NM60ND is ideal for various high-voltage applications, including:

  • Flyback converters.
  • LED lighting systems.
  • Switching power supplies.
  • High-power DC-DC converters.
  • Other high-voltage power management systems.

Q & A

  1. What is the maximum drain-source voltage of the STW34NM60ND?
    The maximum drain-source voltage is 600 V.
  2. What is the maximum drain current of the STW34NM60ND?
    The maximum drain current is 29 A.
  3. What is the on-state resistance (Rds(on)) of the STW34NM60ND?
    The on-state resistance is 0.11 Ω.
  4. What is the maximum junction temperature of the STW34NM60ND?
    The maximum junction temperature is 150 °C.
  5. Is the STW34NM60ND 100% avalanche tested?
    Yes, the STW34NM60ND is 100% avalanche tested.
  6. What package type is the STW34NM60ND available in?
    The STW34NM60ND is available in the TO-247 package.
  7. What are some common applications of the STW34NM60ND?
    Common applications include flyback converters, LED lighting systems, and high-power DC-DC converters.
  8. What technology does the STW34NM60ND use?
    The STW34NM60ND uses ST's STripFET F8 technology.
  9. What is the total gate charge (Qg) of the STW34NM60ND?
    The total gate charge is 80.4 nC.
  10. What is the rise time (tr) of the STW34NM60ND?
    The rise time is 53.4 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80.4 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2785 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$12.66
30

Please send RFQ , we will respond immediately.

Same Series
STB34NM60ND
STB34NM60ND
MOSFET N-CH 600V 29A D2PAK
STF34NM60ND
STF34NM60ND
MOSFET N-CH 600V 29A TO220FP
STP34NM60ND
STP34NM60ND
MOSFET N-CH 600V 29A TO220

Similar Products

Part Number STW34NM60ND STW36NM60ND STW30NM60ND STW34NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 29A (Tc) 25A (Tc) 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14.5A, 10V 110mOhm @ 14.5A, 10V 130mOhm @ 12.5A, 10V 105mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80.4 nC @ 10 V 80.4 nC @ 10 V 100 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2785 pF @ 50 V 2785 pF @ 50 V 2800 pF @ 50 V 2722 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc) 250W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
SPC58EC70E1F0C0X
SPC58EC70E1F0C0X
STMicroelectronics
IC MCU 32BIT 2MB FLASH 64ETQFP
TS914ID
TS914ID
STMicroelectronics
IC CMOS 4 CIRCUIT 14SO
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
TD352IDT
TD352IDT
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO