STW34NM60ND
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STMicroelectronics STW34NM60ND

Manufacturer No:
STW34NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 29A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW34NM60ND is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device utilizes ST's advanced STripFET F8 technology, featuring an enhanced trench gate structure. It is designed to offer superior performance in high-voltage applications, particularly in flyback converters and LED lighting systems. The MOSFET is known for its low on-state resistance, high current handling, and robust avalanche capabilities, making it a reliable choice for demanding power management tasks.

Key Specifications

ParameterValue
Maximum Drain-Source Voltage (Vds)600 V
Maximum Gate-Source Voltage (Vgs)25 V
Maximum Gate-Threshold Voltage (Vgs(th))5 V
Maximum Drain Current (Id)29 A
Maximum Junction Temperature (Tj)150 °C
Maximum Power Dissipation (Pd)190 W
On-State Resistance (Rds(on))0.11 Ω
Total Gate Charge (Qg)80.4 nC
Rise Time (tr)53.4 ns
Output Capacitance (Coss)168 pF
PackageTO-247

Key Features

  • Utilizes ST's STripFET F8 technology with an enhanced trench gate structure.
  • 600 V maximum drain-source voltage.
  • Low on-state resistance (Rds(on)) of 0.11 Ω.
  • High current handling capability of up to 29 A.
  • 100% avalanche tested for robustness.
  • Low input capacitance and gate charge.
  • Zener-protected for enhanced reliability.

Applications

The STW34NM60ND is ideal for various high-voltage applications, including:

  • Flyback converters.
  • LED lighting systems.
  • Switching power supplies.
  • High-power DC-DC converters.
  • Other high-voltage power management systems.

Q & A

  1. What is the maximum drain-source voltage of the STW34NM60ND?
    The maximum drain-source voltage is 600 V.
  2. What is the maximum drain current of the STW34NM60ND?
    The maximum drain current is 29 A.
  3. What is the on-state resistance (Rds(on)) of the STW34NM60ND?
    The on-state resistance is 0.11 Ω.
  4. What is the maximum junction temperature of the STW34NM60ND?
    The maximum junction temperature is 150 °C.
  5. Is the STW34NM60ND 100% avalanche tested?
    Yes, the STW34NM60ND is 100% avalanche tested.
  6. What package type is the STW34NM60ND available in?
    The STW34NM60ND is available in the TO-247 package.
  7. What are some common applications of the STW34NM60ND?
    Common applications include flyback converters, LED lighting systems, and high-power DC-DC converters.
  8. What technology does the STW34NM60ND use?
    The STW34NM60ND uses ST's STripFET F8 technology.
  9. What is the total gate charge (Qg) of the STW34NM60ND?
    The total gate charge is 80.4 nC.
  10. What is the rise time (tr) of the STW34NM60ND?
    The rise time is 53.4 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80.4 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2785 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW34NM60ND STW36NM60ND STW30NM60ND STW34NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 29A (Tc) 25A (Tc) 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14.5A, 10V 110mOhm @ 14.5A, 10V 130mOhm @ 12.5A, 10V 105mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80.4 nC @ 10 V 80.4 nC @ 10 V 100 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2785 pF @ 50 V 2785 pF @ 50 V 2800 pF @ 50 V 2722 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc) 250W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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