STB170NF04
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STMicroelectronics STB170NF04

Manufacturer No:
STB170NF04
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 80A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB170NF04 is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. It is part of the STripFET II family and is designed for high-performance applications requiring low on-resistance and high current handling. This MOSFET is packaged in a D2PAK (TO-263) package, which is suitable for a variety of power management and motor control applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 40 V
RDS(on) (On-Resistance) 4.4 mΩ
ID (Drain Current) 80 A
Ptot (Total Power Dissipation) 300 W
TJ (Junction Temperature) -40 to 175 °C
Package D2PAK (TO-263) -

Key Features

  • Low On-Resistance: The STB170NF04 features a low on-resistance of 4.4 mΩ, which minimizes power losses and enhances efficiency in high-current applications.
  • High Current Capability: It can handle a maximum drain current of 80 A, making it suitable for demanding power management and motor control applications.
  • Automotive Grade: Designed to meet the stringent requirements of automotive applications, ensuring reliability and performance in harsh environments.
  • D2PAK Package: The D2PAK package provides good thermal dissipation and is widely used in power electronics for its balance between size and performance.

Applications

  • Automotive Systems: Suitable for various automotive applications such as motor control, power steering, and battery management systems.
  • Power Supplies: Can be used in high-power DC-DC converters and power supplies due to its low on-resistance and high current handling.
  • Industrial Control: Applicable in industrial control systems, including motor drives and power management circuits.
  • Renewable Energy Systems: Useful in solar and wind power systems for efficient power conversion and management.

Q & A

  1. What is the maximum drain-source voltage of the STB170NF04?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the typical on-resistance of the STB170NF04?

    The typical on-resistance (RDS(on)) is 4.4 mΩ.

  3. What is the maximum drain current of the STB170NF04?

    The maximum drain current (ID) is 80 A.

  4. What package type is the STB170NF04 available in?

    The STB170NF04 is available in a D2PAK (TO-263) package.

  5. Is the STB170NF04 suitable for automotive applications?

    Yes, it is designed as an automotive-grade component.

  6. What are some common applications of the STB170NF04?

    Common applications include automotive systems, power supplies, industrial control systems, and renewable energy systems.

  7. What is the junction temperature range of the STB170NF04?

    The junction temperature range is -40°C to 175°C.

  8. How much total power can the STB170NF04 dissipate?

    The total power dissipation (Ptot) is 300 W.

  9. Why is the STB170NF04 preferred in high-current applications?

    It is preferred due to its low on-resistance and high current handling capability.

  10. Where can I find detailed specifications for the STB170NF04?

    Detailed specifications can be found on the official STMicroelectronics website or through authorized distributors like Digi-Key, Mouser, etc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB170NF04 STB150NF04
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 40A, 10V 7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 150 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 25 V 3650 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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