Overview
The STH410N4F7-6AG is an automotive-grade N-channel Power MOSFET produced by STMicroelectronics. This device utilizes the advanced STripFET™ F7 technology, which features an enhanced trench gate structure. This technology results in very low on-state resistance, making it highly efficient for various power management applications. The MOSFET is packaged in an H2PAK-6 package, which is designed to provide excellent thermal performance and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 40 | V |
| Continuous Drain Current (Id) @ 25°C | 200 | A |
| On-State Resistance (Rds(on)) | 0.8 | mΩ |
| Package | H2PAK-6 |
Key Features
- Low On-State Resistance: The STH410N4F7-6AG features a very low on-state resistance of 0.8 mΩ, which enhances the overall efficiency of the device.
- High Current Capability: This MOSFET can handle a continuous drain current of up to 200 A, making it suitable for high-power applications.
- Advanced STripFET™ F7 Technology: The device utilizes STMicroelectronics' advanced STripFET™ F7 technology, which provides improved performance and reliability.
- Automotive Grade: Designed to meet the stringent requirements of automotive applications, ensuring high reliability and durability.
- Excellent Thermal Performance: The H2PAK-6 package is designed to provide superior thermal dissipation, ensuring stable operation under high-power conditions.
Applications
- Automotive Systems: Suitable for various automotive applications such as power steering, braking systems, and other high-power electronic control units.
- Power Management Systems: Ideal for use in power management systems that require high efficiency and reliability.
- Industrial Power Supplies: Can be used in industrial power supplies and DC-DC converters where high current handling and low on-state resistance are critical.
- Renewable Energy Systems: Applicable in renewable energy systems, such as solar and wind power inverters, due to its high efficiency and reliability.
Q & A
- What is the maximum drain to source voltage (Vdss) of the STH410N4F7-6AG?
The maximum drain to source voltage (Vdss) is 40 V.
- What is the typical on-state resistance (Rds(on)) of the STH410N4F7-6AG?
The typical on-state resistance (Rds(on)) is 0.8 mΩ.
- What is the continuous drain current (Id) rating of the STH410N4F7-6AG at 25°C?
The continuous drain current (Id) rating at 25°C is 200 A.
- What package type is used for the STH410N4F7-6AG?
The STH410N4F7-6AG is packaged in an H2PAK-6 package.
- What technology does the STH410N4F7-6AG use?
The STH410N4F7-6AG uses STMicroelectronics' STripFET™ F7 technology.
- Is the STH410N4F7-6AG suitable for automotive applications?
Yes, the STH410N4F7-6AG is designed to meet the requirements of automotive applications.
- What are some common applications of the STH410N4F7-6AG?
Common applications include automotive systems, power management systems, industrial power supplies, and renewable energy systems.
- Why is the H2PAK-6 package used for the STH410N4F7-6AG?
The H2PAK-6 package is used for its excellent thermal performance and reliability.
- How does the STripFET™ F7 technology enhance the performance of the STH410N4F7-6AG?
The STripFET™ F7 technology enhances performance by providing very low on-state resistance and improved thermal characteristics.
- Can the STH410N4F7-6AG be used in high-power electronic control units?
Yes, the STH410N4F7-6AG is suitable for high-power electronic control units due to its high current handling and low on-state resistance.
