Overview
The STH410N4F7-2AG is an automotive-grade N-channel Power MOSFET produced by STMicroelectronics. This device utilizes STMicroelectronics' advanced STripFET™ F7 technology, which features an enhanced trench gate structure. This technology results in very low on-state resistance, reduced internal capacitance, and lower gate charge, enabling faster and more efficient switching. The MOSFET is packaged in the H²PAK-2 package, making it suitable for high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STH410N4F7-2AG | |
| Drain-Source Voltage (VDS) | 40 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Drain Current (ID) Continuous at Tcase = 25 °C | 200 | A |
| Drain Current (ID) Continuous at Tcase = 100 °C | 200 | A |
| Drain Current (IDM) Pulsed | 800 | A |
| Total Dissipation at Tcase = 25 °C (PTOT) | 365 | W |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 90 A | 0.8 mΩ | |
| Thermal Resistance Junction-Case (Rthj-case) | 0.41 °C/W | |
| Operating Junction Temperature Range (Tj) | -55 to 175 °C | °C |
| Storage Temperature Range (Tstg) | -55 to 175 °C | °C |
Key Features
- Designed for automotive applications and AEC-Q101 qualified.
- Among the lowest RDS(on) on the market, with a typical value of 0.8 mΩ.
- Excellent figure of merit (FoM) for high efficiency.
- Low Crss/Ciss ratio for improved EMI immunity.
- High avalanche ruggedness.
Applications
The STH410N4F7-2AG is primarily used in switching applications, particularly in the automotive sector. Its high current handling and low on-state resistance make it suitable for power management in vehicles, including but not limited to:
- Power conversion and switching.
- Motor control and drive systems.
- High-power DC-DC converters.
Q & A
- What is the maximum drain-source voltage (VDS) of the STH410N4F7-2AG?
The maximum drain-source voltage (VDS) is 40 V. - What is the typical on-state resistance (RDS(on)) of the STH410N4F7-2AG?
The typical on-state resistance (RDS(on)) is 0.8 mΩ. - What is the maximum continuous drain current (ID) at Tcase = 25 °C?
The maximum continuous drain current (ID) at Tcase = 25 °C is 200 A. - Is the STH410N4F7-2AG AEC-Q101 qualified?
Yes, the STH410N4F7-2AG is AEC-Q101 qualified, making it suitable for automotive applications. - What is the package type of the STH410N4F7-2AG?
The STH410N4F7-2AG is packaged in the H²PAK-2 package. - What is the maximum junction temperature (Tj) of the STH410N4F7-2AG?
The maximum junction temperature (Tj) is 175 °C. - What is the total dissipation (PTOT) at Tcase = 25 °C?
The total dissipation (PTOT) at Tcase = 25 °C is 365 W. - What are the key features of the STripFET™ F7 technology used in the STH410N4F7-2AG?
The STripFET™ F7 technology features very low on-state resistance, reduced internal capacitance, and lower gate charge, enabling faster and more efficient switching. - In what types of applications is the STH410N4F7-2AG typically used?
The STH410N4F7-2AG is typically used in switching applications, particularly in the automotive sector, including power conversion, motor control, and high-power DC-DC converters. - What is the thermal resistance junction-case (Rthj-case) of the STH410N4F7-2AG?
The thermal resistance junction-case (Rthj-case) is 0.41 °C/W.
