Overview
The FQA11N90-F109 is an N-Channel Enhancement Mode Power MOSFET produced by onsemi. This device is fabricated using onsemi’s proprietary planar stripe and DMOS technology, which is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The MOSFET is suitable for various high-power applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 900 | V |
| Drain Current - Continuous (TC = 25°C) | 11.4 | A |
| Drain Current - Continuous (TC = 100°C) | 7.2 | A |
| Drain Current - Pulsed | 45.6 | A |
| Gate to Source Voltage (VGSS) | ±30 | V |
| Single Pulse Avalanche Energy (EAS) | 1000 | mJ |
| Power Dissipation (TC = 25°C) | 300 | W |
| Thermal Resistance, Junction to Case (RθJC) | 0.42 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 40 | °C/W |
| Operating and Storage Temperature Range | -55 to +150 | °C |
| Maximum Lead Temperature for Soldering | 300 | °C |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS = 10 V, ID = 5.7 A | 0.75 - 0.96 | mΩ |
| Gate Threshold Voltage (VGS(th)) | 3.0 - 5.0 | V |
| Total Gate Charge (Qg) @ VDS = 720 V, ID = 11.4 A, VGS = 10 V | 72 - 94 | nC |
Key Features
- High Drain to Source Voltage (VDSS) of 900 V and high Drain Current (ID) of 11.4 A.
- Low on-state resistance (RDS(on)) of 0.75 - 0.96 mΩ at VGS = 10 V and ID = 5.7 A.
- Low Gate Charge (Qg) of 72 - 94 nC.
- Low Crss (Reverse Transfer Capacitance) of 30 - 40 pF.
- 100% Avalanche Tested.
- Pb-Free, Halide-Free, and RoHS Compliant.
Applications
- Switched Mode Power Supplies.
- Active Power Factor Correction (PFC).
- Electronic Lamp Ballasts.
Q & A
- What is the maximum drain to source voltage (VDSS) of the FQA11N90-F109 MOSFET?
The maximum drain to source voltage (VDSS) is 900 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 11.4 A.
- What is the maximum pulse drain current (IDM)?
The maximum pulse drain current (IDM) is 45.6 A.
- What is the gate to source voltage (VGSS) range?
The gate to source voltage (VGSS) range is ±30 V.
- What is the single pulse avalanche energy (EAS)?
The single pulse avalanche energy (EAS) is 1000 mJ.
- What is the thermal resistance from junction to case (RθJC)?
The thermal resistance from junction to case (RθJC) is 0.42 °C/W.
- What is the operating and storage temperature range?
The operating and storage temperature range is -55 to +150 °C.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300 °C.
- What are the typical applications of the FQA11N90-F109 MOSFET?
The typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
- Is the FQA11N90-F109 MOSFET RoHS compliant?
Yes, the FQA11N90-F109 MOSFET is Pb-Free, Halide-Free, and RoHS Compliant.
